Flux and fluence dependence of disorder produced during implantation of 11B in silicon

The flux and fluence dependence of disorder produced in silicon during the implantation of ¹¹B has been investigated at room temperature, -50°C. and -120°C. Implantations were carried out with 200 keV ¹¹B ions using current densities in the range from 0.06μA/cm² to 15μA/cm², and the disorder monitored by measuring the energy spectra of backscattered protons which were incident on the sample at 450 keV parallel to a (110) axis. Significant differences in the dependence of the disorder on ¹¹B flux and fluence were observed between the implantations performed at room temperature and those carried out at the two lower temperatures.     

The variation of Mn-dopant distribution state with x and its effect on the magnetic coupling mechanism in Znl-xMnxO nanocrystals

Zn1-xMnxO （x = 0.0005, 0.001, 0.005, 0.01, 0.02） nanocrystals are synthesized by using a wet chemical process. The coordination environment of Mn is characterized by X-ray photoelectron spectroscopy, Raman spectroscopy, and its X-ray absorption fine structure. It is found that the solubility of substitutional Mn in a ZnO lattice is very low, which is less than 0.4%. Mn ions first dissolve into the substitutional sites in the ZnO lattice, thereby forming Mn2＋O4 tetrahedral coordination when x ≤ 0.001, then entering into the interstitial sites and forming Mn3＋O6 octahedral coordination when x ≥ 0.005. All the samples exhibit paramagnetic behaviors at room temperature, and antiferromagnetic coupling can be observed below 100 K.     

Density of impurity states of shallow donors in a quantum well under intense laser field

The density of donor impurity states in a square GaAs–AlGaAs quantum well under an intense laser field is calculated taking into account the laser dressing effects on both the Coulomb potential and the confining potential. Using the effective-mass approximation within a variational scheme, the donor binding energy is obtained as a function of the laser dressing parameter, and the impurity position. Our results point out that a proper consideration of the density of impurity states may be of relevance in the interpretation of the optical phenomena related to shallow impurities in quantum wells, where the effects of an intense laser field compete with the quantum confinement.     

Dielectric mismatch effect on the photoionization cross section and intersublevel transitions in GaAs nanodots

A theoretical study of the electronic states in a spherical quantum dot with and without a hydrogenic impurity is performed within the effective mass approximation taking into account the dielectric mismatch effect. By considering the joint action of the quantum confinement and polarization charges, the photoionization cross section for an on-center donor and intersublevel optical absorption are investigated. We found that: i) the subband energies increase while the 1s and 2p impurity levels decrease when the dielectric mismatch between the dot and its environment enhances; ii) the dielectric mismatch has a significant effect on the peak position and magnitude of the photoionization cross section so that the behavior of this quantity can indicate the material in contact with the nanostructure; iii) the absorption spectrum is less sensitive to the environment dielectric properties but it significantly depends on the dot radius as well as on the impurity presence. The possibility of tuning the resonant energies by using the combined effect of the quantum confinement and dielectric mismatch between the dot and the surrounding medium can be useful in designing new optoelectronic devices.     

Binding energy and photoionization cross-section of a hydrogen-like donor impurity in a quantum well-wire in a magnetic field

The effect of a uniform longitudinal magnetic field on the binding energy and photoionization cross-section of a hydrogen-like donor impurity is studied for a semiconductor quantum well-wire approximated by a cylindrical well of finite depth. The selection rules and analytical expressions for the photoionization cross-section are obtained depending on the magnetic field induction, impurity position, and light wave polarization.     

Hydrogenic impurity in a quantum dot: Comparison between the variational and strong perturbation methods

A comparison is given between the variational and strong perturbation techniques. It has been shown that the variational method gives, in general, better results. Also, a new formulation is presented for the strong perturbation technique that depends on a simpler equivalent form of the perturbed part of the Hamiltonian. Moreover, common expressions which are valid for both treatments have been obtained. The results are applied to calculate the binding energy for a hydrogenic impurity placed in a finite confining potential spherical quantum dot in the states (1s), (2p) and (2s). The results obtained hitherto for a central impurity by using the strong perturbation technique are deduced in a much simpler way. As regards the off-central impurity some new expressions have been derived in both treatments. The numerical results for the two states (1s) and (2p) have also been investigated.     

单一杂质半导体费米能级的普适公式

利用电中性条件,导出了掺单一杂质半导体费米能级的谱适公式,在具体应用时可作相应简化。     

Water assisted thermal segregation

Solid state purification generally requires efficient diffusion mechanisms in order to allow impurity migration towards the sample surface, from which it can be removed by a suitable mean. Since solid state diffusion just becomes efficient near the melting point, generally high working temperatures are required, resulting in expensive, energy consuming processes. The addition of small amounts of a common liquid solvent of both matrix and impurity results, even at low temperatures, in effective diffusion mechanisms the thermodynamical aspects of which are discussed in this work. Thermal cycling enhances the efficiency of the described process. Its concerns industrial and analytical applications.     

电感耦合等离子体原子发射光谱法测定钒铁中8个杂质元素含量和方法精密度的验证

提出了电感耦合等离子体原子发射光谱法(ICP-AES)测定钒铁中硅、磷、铝、锰、镍、铬、铜、钛共8个杂质元素含量的方法。钒铁样品(0.5000g),先后加入50%(体积分数)硝酸溶液20mL及50%(体积分数)盐酸溶液10mL,在100℃左右加热溶解,溶解过程中应注意保持溶液体积在25mL左右。将溶液过滤并置于200mL容量瓶中作为母液留用。将滤纸及不溶物一并移入铂坩埚中,置于马弗炉中,先于250℃灰化20min,稍冷后加入无水碳酸钠和硼酸(质量比2∶1)组成的混合熔剂0.3g,升温至950℃融熔15min。冷却,用体积比1∶10的盐酸溶液10mL浸出熔块,将此溶液与上述母液合并并加水定容至200mL。此溶液供ICP-AES在仪器工作条件下进行分析。绘制校准曲线时,加入纯铁和五氧化二钒作为基体,以消除基体干扰,然后加入上述8种元素的标准溶液,并按上述溶液最终稀释体积条件和仪器工作条件制作曲线(R大于0.999)。为验证所提出的分析方法的测定数据的精密度,约请了10个实验室对8个不同含量水平的钒铁样品对方法作协同试验,按GB/T 6379.2-2004所规定的方法求算了重复性标准偏差Sr和重复性限r,以及再现性标准偏差SR和再现性限R,并求得所测定的8种元素在各自的测定范围内的r与w之间和R与w之间的函数关系,说明该方法有较好的稳定性和准确性,而且证明此方法是可行的。     

X-射线荧光光谱测定氧化铍中杂质元素

拟定了ＢｅＯ中１２种痕量杂质元素的Ｘ－射线荧光光谱测定方法,采用光谱纯试剂人工合成校准标样,粉末压块法制备分析样片。考虑到ＢｅＯ对Ｘ射线的透明性,在样片与样品盒支架之间垫置钼片消除试样盒发射线的干扰并产生附加激发以提高灵敏度。本文分析结果与等离子民发射和原子吸收光谱对照相吻合。