Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si

The authors review what has been learned concerning the electrical and annealing properties of point defects in high-energy electron or proton irradiated Si from deep level transient spectroscopy (DLTS). The authors have focused mainly on the properties of electron traps, and to a lesser extent on the properties of hole traps. In addition to an in-depth discussion of hydrogen-related defects in Si, this review article provides a brief tutorial on ion-solid interactions and the theory underlying DLTS. The authors also provide a few examples of the power of high resolution Laplace DLTS in analyzing radiation induced defects. The collection of results gathered in this article may provide the fundamental information for successful defect engineering in light-particle irradiated Si.     

Epoxy/polyhedral oligomeric silsesquioxane nanocomposites from octakis(glycidyldimethylsiloxy)octasilsesquioxane and small‐molecule curing agents

Epoxy/polyhedral oligomeric silsesquioxane (POSS) nanocomposites were obtained from octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG) and diglycidyl ether of bisphenol A cured with small‐molecule curing agents of diethylphosphite (DEP) and dicyandiamide (DICY). An increase in the POSS contents of the nanocomposites and an improvement in the nanocomposite homogeneity were observed with the use of the small‐molecule curing agents. Phosphorus in DEP and nitrogen in DICY also performed synergism with POSS for thermal stability enhancement and flammability improvement in the nanocomposites. The nanocomposites possessing high OG contents exhibited good thermal stability, improved flammability, and high storage moduli. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 3825–3835, 2006     

K_2O矿化剂对硅微粉结合SiC窑具析晶结构,性能与氧化动力学影响的研究

在硅微粉结合SiC窑具中添加适量的K2O矿化剂，能使体积效应大的a-方石英转化成体积效应小的α-鳞石英，其矿化能力与MnO2相当[1]，但比MnO2矿化剂更有适用价值。采用XRD法确定析晶结构及其含量，探讨析晶结构对窑具性能的影响，从中确定最佳的K2O添加量为1．5％。