An Efficient Numerical Model for Planar Spiral Inductor On-Chip

In this paper, a very useful numerical technique has been developed for analyzing the transient characteristics of a planar-spiral inductor on-chip. A locally conformal technique and an alternating-direction implicit scheme are applied to the finite-difference time-domain method. A formulation for solving three dimensional Maxwell’s equations is proposed. Using the proposed method, various parameters of the planar-spiral inductors have been analyzed and an equivalent circuit, which includes frequency-independent circuit elements, has been introduced. Highly computational efficiency is implemented. Numerical results show excellent agreement with the measured data over a wide frequency range.     

含硅路易斯酸的发展及其在有机合成中的应用

综述了含硅路易斯酸R₃SiX [X＝I, OTf, NTf₂, C(C₆F₅)Tf₂等]和(R₃SiX＋ML_n)的发展、合成以及它们在有机合成中的应用. 它们主要被用来催化Aldol, 烯丙基化, Diels-Alder, Ene和Friedel-Crafts等反应. 催化剂的用量一般为0.5～20 mol%, 并随着催化剂的活性不同, 反应产率从一般到良好不等. 催化剂活性顺序为R₃SiNTf₂＞R₃SiOTf, (R₃SiX＋ML_n)＞R₃SiX. 也对近年出现的手性含硅路易斯酸的发展和应用进行了概述, 当手性双-(多氟甲磺酰)-亚胺基硅烷用于催化环戊二烯和丙烯酸甲酯的Diels-Alder反应时, ee值高达54%.     

双金属(Sn/Ni)掺杂多孔硅微球的液相合成与电化学储锂性能

使用廉价的硅铝合金前驱体,通过简单的化学沉积方法制备了新型双金属(Sn/Ni)掺杂多孔硅微球(pSi@SnNi)。pSi@SnNi复合材料的三维多孔结构可以缓冲硅在锂化过程中的巨大体积膨胀,增加储锂活性位点。双金属(Sn/Ni)的掺杂可以提高硅的电子导电性,改进pSi的结构稳定性。由于其独特的组成和微观结构,具有适当Sn/Ni含量的pSi@SnNi复合材料显示了较大的可逆储锂容量(0.1 A·g^-1下为2 651.7 mAh·g^-1)、较高的电化学循环稳定性(1 A·g^-1下400次循环后为1 139 mAh·g^-1)和优异的倍率性能(2.5 A·g^-1下为1 235.8 mAh·g^-1)。     

Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devices

Optical and photoluminescence characterizations were performed on nanometric multilayer structures based on amorphous silicon nitrogen alloys. Evidences are shown that the radiative efficiency of multilayers increases with respect to single-layer structures. This is ascribed to a strong electron–hole pair localization and a low heterointerfaces defect density. Time-resolved photoluminescence measurements yield fast recombination with an energy-dependent lifetime due to hopping processes. Finally, the performance of an electroluminescent device based on multilayers is presented.     

氧化硅薄膜中掺杂Tb~(3+)离子的发光敏化

采用溶胶-凝胶法在硅片上制备了掺杂稀土离子Tb~(3+)的SiO_2薄膜,并用荧光分析方法研究了薄膜的发光特性,对发光效果的提升途径做了探索和分析。在245 nm波长的激发下,能够观察到Tb~(3+)的5D4-7FJ(J=6,5,4,3)的跃迁发射峰。对于Tb~(3+)离子的高浓度掺杂体系,在掺入富Si或Al~(3+)离子后,浓度猝灭效应能得到明显改善。同时掺入两种激活剂的样品发光强度较只掺Al~(3+)的样品大了近一倍。此外,氩气氛退火引入氧空位缺陷也能使样品的发光强度有较大提升,氩气氛退火的最佳温度为1 200℃。     

二维光子晶体全光异或门的设计及研究

分析了二维光子晶体马赫-曾德尔干涉仪的传输特性,将二维光子晶体波导、环形腔和马赫-曾德尔干涉仪有效结合,提出了一种基于二维光子晶体马赫-曾德尔干涉仪的异或门设计。用平面波展开法分析二维光子晶体能带结构,并用时域有限差分法验证光信号在该器件中的电场稳态分布。结果表明,该结构能够实现异或逻辑,且具有高逻辑对比度7.88 dB,快速响应周期0.388 ps和高传输速率7.87 Tbit/s;并且该器件结构尺寸仅为13 μm×14 μm,易于集成。该异或逻辑结构中引入了二维光子晶体马赫-曾德尔干涉仪,使得光子晶体逻辑门结构的设计更加多样,并为二维光子晶体半加器与全加器的设计提供了基础,具有重要的研究意义。     

一维光子晶体微腔在硅基材料发光中的应用研究

硅基材料的高效发光对未来硅基光电子集成的发展极其关键,含微腔的一维光子晶体可以显著提高其发光强度、窄化其发光峰.介绍了几种硅基材料发光的一维光子晶体微腔结构,包括单缺陷模式的对称与非对称结构、多缺陷模结构及电注入结构.利用传输矩阵法计算其缺陷模透射谱,以间接分析其发光谱.     

Novel silicon-containing drugs derived from the indomethacin scaffold: Synthesis, characterization and evaluation of biological activity

Synthesis, spectroscopic characterization and in vitro pharmacological and cancer cell growth inhibitory activity studies of new silicon-containing compounds based on the indomethacin scaffold are now reported. Amidation of the indomethacin carboxylate group using amino-functional silanes generated a series of novel lipophilic derivatives of indomethacin. The pharmacological activity of these derivatives tested against human recombinant cyclooxygenase-1 and 2 demonstrated that the silicon-containing derivatives are cyclooxygenase-2 (COX-2) selective. The silicon-containing amides of indomethacin demonstrated in vitro growth inhibitory activity against human MiaPaCa-2 pancreatic carcinoma cells at low μM concentrations. The 3a and 3c derivatives exhibited the most potent in vitro antiproliferative activity, with IC₅₀ <6.0 μM, compared to unmodified indomethacin having an IC₅₀100 μM. We dedicate this paper to Prof. Mitsuo Kira, outstanding organosilicon chemist and valued friend.     

硅基光源的研究进展

随着人们对大容量、高速和低成本的信息传播的要求越来越迫切, 近年来硅基光电子学得以蓬勃发展, 但硅基光源一直没有得到真正的解决, 成为制约硅基光电子学发展的瓶颈. 硅的间接带隙本质给高效硅基光源的实现带来很大困难, 实用化的硅基激光是半导体科学家长期奋斗的目标. 本文分别介绍了硅基发光材料、硅基发光二极管和硅基激光的研究进展, 最后总结了目前各种硅基光源面临的问题和未来的发展方向.     

硅基GHz高速电光调制器研究进展

硅基高速电光调制器是新一代密集波分复用系统和光时分复用系统中的关键光电子器件，他的运用可以降低光通讯系统的制作成本并且大大有利于未来的硅基光电集成．目前国际上已经实现的硅基高速电光调制器件的调制速率已经超过6GHz．文章对国外硅基高速电光调制器的最新研究进展进行了介绍，评述了各种基于不同电学和光学结构的硅基电光调制器，对不同类型器件在制作和应用中的优缺点进行了比较．