A comparison between RF-driven single and double cathode structures

Experimental results are presented for the electron density, bias voltage, and dark space size surrounding a 18-cm-diameter cathode situated in the centre of a 30-cm-diameter, 30-cm-long glass vacuum chamber, containing low-pressure argon. The cathode is a single aluminium plate to which can be added another plate situated at various distances from the first and electrically connected to it. The effect of the second cathode is to dramatically reduce the self-bias on the driven cathode and considerably increase the luminosity: The plasma density increases but at a significantly smaller rate.     

脉冲离子束作用下靶面次级电子的抑制

论述了离子束作用下固体表面次级电子产生的机制,介绍了特种真空器件中次级电子抑制的各种方法及其优缺点,提出了脉冲离子束作用下靶面次级电子抑制的自偏势法和曲面靶法等设计思路,并在实验上进行了初步验证。实验结果表明,自偏势电压大于80 V后,次级电子得到很好的抑制。在相同束流情况下,曲面靶较平面靶的次级电子产额少。利用实验结果进行估算得到了近似的次级电子产额约为0.67,比文献中的结果(0.58)偏大。对实验中自偏势法抑制反峰电子电流的效果进行了分析和讨论,结果表明:自偏势法不但能够有效抑制离子打靶产生的次级电子,还能抑制由功率源不稳定带来的入射反峰电子流。     

射频电感性耦合等离子体调谐基片自偏压特性

采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法,控制基片电极的射频自偏压。研究了调谐基片自偏压随外部调谐电容值的变化特征,得到了调谐基片射频自偏压随射频放电功率、气压的变化曲线。在一定放电参数区域内,调谐基片射频自偏压随调谐电容的变化曲线呈现跳变、双稳、迟滞现象。     

Noninvasive plasma diagnostics in a parallel-plate reactor for RF discharges

Extensive studies on the discharge current of a 50-kHz argon glow discharge in a parallel-plate reactor has led to a model that is able to describe the discharge in a wide range of pressures and powers for the evaluation of plasma parameters. The network simulation program PSPICE can be used to simulate the model in a way easily adopted to other plusma reactors as well. This may lead to a new plasma diagnostic method that does not require a complicated setup. The behavior of the discharge current can also he used for numerical simulations of the sell bias voltage in capacitively coupled plasma reactors. The influence of power and pressure can be integrated and allows an estimation of the self-bias for given reactor geometries and process parameters.