Zn(BTZ)2白色有机电致发光材料的合成及其器件制备

以PCl₃为脱水剂,将邻氨基硫酚与水杨酸脱水环化合成出2-(2-羟基苯基)苯并噻唑,并进一步将所得产物与乙酸锌反应合成出2-(2-羟基苯基)苯并噻唑螯合锌(Zn(BTZ)₂)材料。以该配合物作为发光层制备出结构为ITO/PVK:TPD/Zn(BTZ)₂/Al近白色电致发光器件,其色坐标位于白场之内(x=0.242,y=0.359),在驱动电压为16V时,亮度达3200cdm²,对应的量子效率为0.32%。进一步在Zn(BTZ)₂中掺入橙红色染料Rubrene,制成ITO/PVK:TPD/Zn(BTZ)₂:Rubrene/Al结构器件,实现了纯白色发光(色坐标值:x=0.324,y=0.343),非常接近于白色等能点,且量子效率达0.47%。最后对上述器件的发光和电学性能进行了深入的研究和探讨。     

在半金属表面上应力诱导的红荧烯晶态薄膜

报道了在Bi（001）衬底上从第一层开始形成的红荧烯晶体薄膜.随着覆盖度的增加,红荧烯薄膜的结构会发生从自组装到混合相的转变.在混合相中存在着红荧烯的晶体畴和分子自组装形成的畴壁.特别是,我们在这种晶体畴中发现了Kurdjunov-Sachs（KS）转动外延和巨大的压缩应力.随着覆盖度的增加,红荧烯薄膜会按照逐层生长的模式进行,直至第四个分子单层.我们认为,转动外延过程中所产生的巨大压缩应力是导致晶态红荧烯薄膜的形成原因.     

Acid-catalyzed transformation of rubrene to indenonaphthacene and its paired interacting orbital (PIO) analysis

Treatment of rubrene (5,6,11,12-tetraphenylnaphthacene) with trifluoroacetic acid in dichloromethane gives 4b,9,10-triphenyl-4b,9-dihydroindeno[1,2,3-fg]naphthacene (1) as the sole isolable product. Paired interacting orbital (PIO) analysis indicates that the reaction is initiated by preferential attack of H⁺ at C(11) position of rubrene.     

Experimental survey of the kinetics of acene Diels–Alder reactions

Second‐order rate constants were gathered for solution Diels–Alder reactions of substituted and unsubstituted acenes, with the intention of ascertaining ideal diene–dienophile combinations. Particular focus was placed on the larger ring systems namely tetracene, pentacene, and rubrene. The rate constants between the acenes ranged roughly six orders of magnitude, from the slowest reacting diene, rubrene, to the fastest diene, pentacene. The utilized dienophiles covered a large range of reactivity from 2,3‐dichloromaleic anhydride to tetracyanoethylene. To aid in the interpretation of acene reactivity, constants were compared to the extensive body of Diels–Alder literature with well‐studied dienes such as anthracene and trans‐1‐methoxy‐1,3‐butadiene serving as points of reference. Complex reaction kinetics for the addition of MeTAD and rubrene was found: initial fast consumption generated an intermediate, followed by dramatically slower product formation. The kinetic data creates a foundation for the analysis of prior and future reactions between organic semiconductor acene materials with volatized dienophiles, a surface functionalization technique for enhancing these electronic materials. Copyright © 2015 John Wiley & Sons, Ltd.     

红荧烯晶体薄膜的制备及应用研究进展

红荧烯具有导电性好、吸收系数高等优良的荧光特性和半导体特性,是目前报道的单晶迁移率最高的材料,在有机光电器件中有很好的发展前景,受到科研人员的广泛关注。目前国内外主要采用真空蒸镀方法和溶液加工方法制备红荧烯晶体薄膜,采用各种制备工艺来提高红荧烯薄膜质量。本文在系统介绍红荧烯晶体薄膜制备工艺研究进展的基础上,归纳总结了掺杂种类/聚合物浓度、后处理工艺/实验温度等对红荧烯晶体性能的影响,简要概述了红荧烯薄膜在有机光电子器件应用研究中所取得的研究成果,最后展望了基于红荧烯晶体薄膜的光电器件的发展趋势。     

红荧烯反蛋白石的制备及其光学性质研究

通过表面浸润法制备了红荧烯的反蛋白石结构,成功观测到其结构色,并检测出相对应反射光谱.此类方法可进一步拓展制备多种具有三维有序大孔结构的有机半导体材料,得到新的光电性质.     

High-efficiency Simple Structure White Organic Light-emitting Devices Based on Rubrene Ultrathin Layer

White organic light-emitting devices (WOLEDs) were fabricated with an ultrathin layer of rubrene inserted between NPB and TPBI. With a simple three-layer structure of ITO/NPB(50 nm)/rubrene(0.1 nm)/TPBI(50 nm)/LiF/Al, a white light with CIE coordinates of (0.31, 0.30) were generated. The device gave a maximum luminance efficiency of 2.04 lm/W at 5 V. Furthermore, with a multilayer structure of ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.1 nm)/TPBI(40 nm)/Alq₃(10 nm)/LiF/Al, the device reached a maximum luminance efficiency of 4.29 lm/W at 4 V and the luminance could exceed 10 000 cd/m² at 10 V.     

溶液法制备PVP为界面修饰层的红荧烯结晶性薄膜

为了获得低成本、高结晶度的红荧烯薄膜,采用溶液加工的方法和聚合物界面修饰层研究了红荧烯薄膜的性质。首先,通过旋涂方法在Si/SiO₂衬底上先沉积一层聚乙烯吡咯烷酮（PVP）作为界面修饰层,利用偏光显微镜（POM）、原子力显微镜（AFM）研究了PVP层表面形貌及粗糙度。接着在PVP上滴涂红荧烯溶液后固化烘干,制备红荧烯晶体薄膜,研究了不同PVP浓度和不同成膜温度下界面修饰层对红荧烯表面形貌的影响。然后,利用X射线衍射（XRD）表征对比研究了薄膜的微观结构。最后,分析了红荧烯晶体薄膜的生长机制。实验结果表明：80~140℃及低浓度的PVP条件下能得到结晶度高、连续的红荧烯球晶,并且温度升高时,球晶尺寸变大。PVP作为界面修饰层有利于改善红荧烯的成膜性,制备高结晶度的晶体薄膜。