Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

He-N2 radiofrequency discharge: Influence of N2 on discharge and afterglow

A diagnostic study q (energy transfer processes in a He-N₂ flowing discharge and afterglow has been performed in a radiofrequency-produced plasma cooled in a liquid nitrogen hath. Optical emission spectroscopy in the visible and infrared spectral range as well as Langrnuir probe diagnostics were used. The vibrational kinetics of CO injected in such an afterglow has been examined. It shows a slow cooling of the electrons in the afterglow regime. The electron kinetics responsible joy CO vibrahonal excitation is turned off when N₂ is added to the He discharge, while that for vibrationally excited N₂ molecules is turned on. The results are discussed on the basis of previous theorerical calculations and experiments on the He-N₂ system.     

Magnetic and magneto-optical properties of CoFeCrSiB amorphous ribbons

In this paper we investigate the surface magnetic properties of as-quenched (AQ) CoFeCrBSi ribbons prepared by planar flow casting method with using magneto-optic Kerr effect (MOKE). Measured hysteresis loops in longitudinal and transversal configurations enable us to obtain the information of ribbons surface magnetic properties. Moreover, we suggest new magneto-optic method, which is based on measurements of magneto-optical effects depending on DC current flowing through the ribbon. Experimental data of AQ ribbons are then compared with the model, which describes the influence of incidence angle on magneto-optical angles.     

Impact of electron-electron interaction on the electron energy distribution function in molecular plasmas under rf field action

Calculations of the electron energy distribution and of relevant macroscopic quantities of collision-dominated, weakly ionized plasmas under rf field action have been performed with increasing degrees of ionization, and the impact of the electron-electron interaction on these quantities was determined. The investigations were performed for the gas plasmas in CO and H₂ as representatives of molecular plasmas The energy distribution and macroscopic quantities are obtained by solving the nonstationary Bolizmann equation for a given rf field and degree of ionization taking into accoung and additional Fokker-Planck term besides the collision integrals for the elastic and the main inelastic collision processes. In these molecular plasmas a remarkable impact of the electron-electron interaction connected with increasing Maxwellization is observed for degrees of ionization greater than 10.     

Electron kinetics of collision dominated r.f. bulk plasma in CO: The role of second-kind collisions

Electron energy distribution functions (EEDF) and related properties in the bulk region of the rf CO plasma at the reduced rf field frequency /p₀=×10⁷ sec^–1 torr^–1 have been calculated by solving the time-dependent spatially homogeneous Boltzmann equation in the presence of second-kind collisions and have been interpreted on a microphysical basis. The results show that second-kind collisions (vibrational and electronic) strongly affect the temporal evolution of EEDF, of the mean energy, and of the mean collision frequencies for vibrational and electronic excitation processes, as well as for ionization. In particular, second-kind collisions in the CO rf bulk plasma strongly decrease the modulation of the mean ionization frequency during its periodical alteration in the rf field. Furthermore, the effect of second-kind collisions on an approximate determination of the time-averaged EEDF in the rf bulk plasma using the so-called effective-field appriximation has been estimated.     

The Effect of Vibrational Excitation of Molecules on Plasmachemical Reactions Involving Methane and Nitrogen

An experimental study of plasmachemical reaction involving CH₄ and N₂ molecules in rf discharge was studied in order to know the effect of vibrational excitation of N₂ molecules. When the relative nitrogen concentration was greater than 0.8, the main product of CH₄ decomposition was HCN, and the rate of methane decomposition at this condition was faster than that one in pure methane. These results could be confirmed through the mass spectroscopic method. The reason for these results is the vibrational energy of N₂ excited by rf discharge. The chain reaction mechanisms of producing HCN by vibrational excitation of N₂ were examined closely through numerical simulation. The rate-controlling step was the dissociation reaction of excited nitrogen molecule to the atomic nitrogen, so the process of HCN synthesis was limited by the value of reaction constant, k^N.     

In situ FTIR diagnostics of the radio-frequency plasma decomposition of N2O

The decomposition of N₂O in a 13.56-MHz parallel-plate system was studied usingin situ Fourier transform infrared (FTIR) spectroscopy. Areas of two infrared absorption bands of N₂O recorded at 8 cm^–1 resolution were used to estimate relative gas-phase dissociation as a function of rf power and flow rate at 500 mT. Flow rate was found to strongly affect band areas over the range of powers investigated (10–90 W). The effect of rf power on band areas diminished above 40 W, probably due to poor plasma confinement. Distortion of the band shapes by the plasma permitted rotational temperatures to be estimated. Rotational temperature increased essentially linearly with power at constant flow rate, reaching 450 K at 80 W, but was independent of flow rate at constant power. Rotational temperatures were also found to depend on the temperature of the electrodes, which were heated by plasma exposure. No infrared-active product species were observed even under batch conditions where all N₂O was irreversibly dissociated. This lack of detectable products and a 50% pressure rise observed in a batch study suggest that N₂ and O₂ are the primary stable discharge products.     

Quadrupole mass spectrometric study of positive ions from RF plasmas of pure CH4, CH4/H2, and CH4/Ar systems

Quadrupole mass spectrometry has been employed to characterize the ionic species in the discharges of pure CH₄, CH₄/H₂, and CH₄/Ar systems. For pure methane, the major positive ions in the discharge at low pressure (e.g., 0.15 torr) are CH ₃ ⁺ , C₂H ₃ ⁺ , CH ₂ ⁺ , C₂H ₂ ⁺ , CH ₄ ⁺ , C₂H ₄ ⁺ , and C₂H ₅ ⁺ at high pressure (e.g., 0.5 torr) the major ions are CH ₃ ⁺ , C₂H ₃ ⁺ , C₂H ₅ ⁺ , C₃H ₃ ⁺ , C H₃H ₇ ⁺ , C₄H ₇ ⁺ , C₅H ₇ ⁺ , C₆H ₅ ⁺ , and C₇H ₇ ⁺ . The relative abundances of C₁ ions decrease with increasing pressure, whereas those of higher-order ions increase with pressure. For 5% CH₄ + 95% H₂ mixture, in addition to those sampling from the pure methane plasma at the lower pressure, H _n ⁺ ions have also been detected. For 5% CH₄ +95% Ar mixture, the principal ions are CH ₃ ⁺ , CH ₂ ⁺ , CH⁺, CH ₅ ⁺ , Ar⁺, and ArH⁺; the ions containing more than two carbon atoms are negligible. In these discharges, the CH ₃ ⁺ and C₂H ₃ ⁺ are the most important positive ions in C₁ and C₂ ions, respectively. The ions detected are believed to come from the sheath between the electrode and the luminous plasma, and have high kinetic energy. An ion-molecule reaction mechanism is proposed which can well explain the observed main features of ionic products.Died June 1, 1991.     

Thin-film multi-layer capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) pyrochlore thin films via radio-frequency sputtering

Thin-film multi-layer ceramic capacitors (MLCCs) were prepared using high-dielectric constant Bi₂Mg_2/3Nb_4/3O₇ thin-films deposited at room temperature via radio-frequency magnetron sputtering. The multi-layer capacitors, in sizes 0402, 0603 and 1005, were well equipped with both inner and outer Cu electrodes. The capacitances of the bi-layer capacitors were twice that of the single-layer version in sizes 0402, 0603, and 1005. The 200 nm-thick Bi₂Mg_2/3Nb_4/3O₇ thin-films would be suitable for thin-film multi-layer capacitor applications.     

Surface modification of several carbon-based materials: comparison between CF4 rf plasma and direct F2-gas fluorination routes

Due to their extreme reactivity, fluorine and fluorinated gases may be used to modify the surface properties of numerous materials. In the following, the surface fluorination of some carbon-based compounds (graphite, graphitised carbon fibres, carbon blacks and elastomers) using CF₄ rf plasma technique and direct F₂-gas fluorination is proposed. From XPS studies, the different types of CF bonding obtained in the materials after treatment have been correlated either to the physico-chemical characteristics of the pristine material or to the experimental parameters of the fluorination. Reaction mechanisms are proposed.