Calculation of heat transfer and uniformity of chemical amplification during post-exposure bake

Heat transfer in a resist-coated silicon wafer using a bake process is theoretically evaluated by modeling the three-dimensional diffusion process, focusing on the controllability of the lithographic performance of chemically amplified resists. Six models of various ambient conditions are used. The proximity gap between the hotplate and the wafer is found to have a dominant influence on the heat transfer process for the whole system. Because the atmosphere near the wafer acts as a thermal diffusion buffer layer, no temperature gradient occurs in the resist, even when it is subjected to convective heat transfer from the resist surface. Experimental results obtained by X-ray lithography confirm the calculation results.     

激光等离子体软X射线接近式光刻术初步研究

描述了用高功率脉冲激光打靶产生的等离子体作为软Ｘ射线源而进行的接近式软Ｘ射线光刻研究，采用负性辐射线光刻胶聚氯甲基苯乙烯，得到了一些新的实验结果。     

Exposure Simulation Model for Chemically Amplified Resists

In this study, after Dill’s model is discussed for transmittance and refractive indices of the non-chemically amplified resists, G- and I-line novolak resists, and the chemically amplified resists, a modification of Dill’s model as a new exposure model is introduced. The simulation results obtained using this new model with the multi-thin film interface method and the Berning theory have shown a good matching to the experimental data. Also, the simulated transmittance change due to the exposure parameters are used to analyze the influence of the coefficients on the transmittance.     

一种新型微透镜阵列成象式投影光刻系统的研究

从理论和实验两方面入手,系统地研究了微透镜阵列的形成原理和制作工艺,分析了微透镜阵列的面形结构,得到了联系微透镜阵列矢高与制作工艺参量的经验公式.并且将四片微透镜阵列耦合,形成一个深紫外光刻的1:1成象的多孔径微小光刻系统.从几何光学理论出发,分析了这个光刻系统综合成象的特点,讨论了这种光刻系统的光学性能,并给出了实验测量方法.     

Acid-catalyzed deprotection mechanism of tert-butyloxycarbonyloxy polymers in chemically amplified resists

A mechanism of acid-catalyzed deprotection of poly(4-tert-butyloxycarbonyloxy-styrene), PBOCST, in chemically amplified resists has been elucidated in terms of elementary processes by means of semiempirical molecular orbital calculations. It is concluded that the overall deprotection of tert-butyloxycarbonyl (t-BOC) group proceeds stepwise; i.e., (a) the first products are an acid carbonate and a tert-butyl cation; (b) a phenolic compound is the secondary and final product from the acid carbonate, which is realized by assistance with a counter anion accompanied by acid; (c) the counter anion also assists acid regeneration from the tert-butyl cation to produce isobutylene. The yield rate of the phenol is proportional to the product of concentrations of the polymer, the catalytic acid, and the counter anion. The activation energy (21 kcal/mol) calculated for the rate-determining step (a) is in good agreement with an experiment. © 1998 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 36: 1035–1042, 1998     

Photogenerated base in polymer curing and imaging: Design of reactive styrenic copolymers susceptible to a base-catalyzed β-elimination

A novel family of functionalized styrenic copolymers that are susceptible to a base-catalyzed β-elimination reaction is reported. The reactive copolymers, poly-{(2-phenyl-2-cyanoethoxycarbonyloxystyrene)-co-(4-hydroxystyrene)}, are prepared by chemical modification of poly(4-hydroxystyrene) using 2-phenyl-2-cyanoethyl chloroformate. A photoresist material consisting of the copolymer and bis[[(2-nitrobenzyl)-oxy] carbonyl]-4,4′-trimethylenedipiperidine used as an amine photogenerator affords positive tone images by UV irradiation. The effect of copolymer structure and composition on imaging, thermal stability, and the ease of β-elimination reaction is discussed. © 1997 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 35 : 3543–3552 1997     

光刻技术:发展路径及未来趋势

光刻技术在半导体器件大规模生产中发挥重要作用.今天,多数先进半导体生产都已经应用ArF准分子激光浸润光刻技术.双重图像曝光和侧壁图像转移技术使ArF准分子激光浸润光刻技术延伸到32纳米半节距(HP)器件的制造成为可能.为了制造更小尺寸的器件,必须开发新的制造工艺.极端紫外线光刻是制造22纳米半节距甚至更小尺寸半导体器件的先进下一代光刻技术解决方案.另外,其他技术解决方案,如纳米压印光刻技术和无掩模直描光刻技术等也被考虑用于制造更小节点尺寸的器件,但是目前这些方案仅仅处在研发阶段,而且在现阶段就已经呈现出在大规模生产中的诸多困难.本文从材料的角度对光刻技术进行一个整体描述,并对光刻技术未来趋势进行讨论.     

Vacuum lithography—A completely dry lithography using plasma processing

The purpose of this paper is to describe a thoroughly dry lithography using plasma polymerization and plasma etching. The new lithography is named vacuum lithography because all processes are performed at reduced pressures. Resist films were formed in bell-jar-type and argon-flow-type reactors. The controllability of plasma polymerization is discussed with respect to the type of reactor and gas mixture. A pattern was delineated in the resist using an electron beam, and it was developed by plasma etching with a mixture of argon and oxygen. It was found that the quality of the plasma-polymerized resist depends strongly on the polymer structure and on the plasma etching conditions. In this experiment, the recorded values of sensitivity and value of plasma-polymerized methyl methacrylate were 700 µC/cm² and 1, respectively.     

Analysis of PPMMA films from oxygen plasma using X-ray photoelectron spectroscopy

Plasma polymerized methyl methacrylate (PPMMA) films have been synthesised on silicon substrates in RF glow discharge using oxygen plasma. The electron beam delineation sensitivity of the PPMMA films has been studied systematically by varying oxygen and monomer flow rates. X-ray photoelectron spectroscopy (XPS) analysis clearly illustrates how C/O ratio in the films determines the properties of PPMMA films as electron beam resist. © 1994 John Wiley & Sons, Inc.     

Acid-catalyzed degradation mechanism of poly(phthalaldehyde): Unzipping reaction of chemical amplification resist

The acid-catalyzed degradation mechanism of chemical amplification resists based on end-capped poly(phthalaldehyde) has been elucidated by semi-empirical molecular orbital calculations. It is concluded that: (i) two different starting points exist in the degradation of end-capped poly(phthalaldehyde), the central part of the polymer as well as the polymer end; (ii) in both cases, after the first protonation, cationic hydroxyl compounds generated decompose to the identical cation intermediate, which can unzip itself to phthalaldehyde monomers successively (unzipping reaction); (iii) the hemiacetal type intermediates hardly degrade to the same intermediate without acid catalyst; (iv) the overall activation energy for the degradation reaction is less than 14 kcal/mol in all the cases. Thus, the poly(phthalaldehyde) resist can easily self-develop below 100°C, as reported in the literature. © 1997 John Wiley & Sons, Inc.