极化子导电到能带导电的转变

采用交流法测量大功率商用钛酸钡(BT)陶瓷加热器的电阻和加热功率随温度的变化关系.结果显示,BT陶瓷的电导特性在80℃附近出现了明显的转变,从低温时的极化子跳跃导电转变为高温时的能带导电,此时,电阻出现极小值,而加热功率出现极大值.     

Many-Polaron States in the Holstein–Hubbard Model

A variational approach is proposed to study some properties of the adiabatic Holstein–Hubbard model which describes an assembly of fermionic charges interacting with a static atomic lattice. The sum of the electronic energy and the lattice elastic energy is proved to have minima with a many-polaron structure in a certain domain of model parameters. Our analytical work consists in expanding these energy minima from the zero electronic transfer limit which remarkably holds for a finite amplitude of the onsite Hubbard repulsion and for an unbounded lattice size.     

极化子效应对ZnS/CdSe量子点三阶极化率的影响

在有效质量近似下,利用量子力学的密度矩阵理论,采用无限深势阱模型,从理论上计算了考虑极化子效应后在导带子带间跃迁时ZnS/CdSe柱型核壳结构量子点二次电光效应(QEOE)和电吸收过程(EA)的三阶极化率。通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点二次电光效应和电吸收过程的三阶极化率的影响。结果表明,极化子效应对二次电光效应的三阶极化率χ⁽³⁾_QEDE和电吸收过程的三阶极化率χ⁽³⁾_EA都有很大影响,并且影响的大小与量子点的尺寸大小有关。     

关于电路量子电动力学系统中光子自由度的消除方案

基于超导传输线和超导量子比特相互耦合的电路量子电动力学(quantum Electrodynamics, QED)系统, 是目前固态量子信息领域的一个倍受关注的物理系统, 也是研究量子测量和量子控制的理想实验平台. 由于其中涉及的驱动场和超导传输线谐振腔支持的光子频率都在微波区, 在量子测量和量子控制研究中往往遇到 大量光子数引起的状态空间维数过大带来的数值模拟方面的困难. 为了避免这个困难, 往往采取"消除"光子自由度的办法, 建立一个只保留量子比特状态自由度的有效描述方案. 本文通过对单比特的量子测量动力学的数值模拟, 检验了 "绝热消除"和"极化子变换"两种方案的适用条件. 结果表明, 在量子非破坏(quantum non-demolition, QND) 测量情况下, 极化子变换精确适用于 任意驱动强度和任意(光子)泄漏速率微腔; 但在非QND测量情况下, 极化子变换相对通常的绝热消除方案, 并无优势. 在强泄漏微腔和弱耦合情况下, 两种消除光子自由度的方法都可以较好地描述 测量动力学; 但如果微腔光子泄漏速率不是很大或量子比特与微腔耦合较强, 则需要纳入光子自由度做完整模拟, 此时的量子测量属性是一个尚待研究的课题.     

紧束缚模型方法及其在DNA分子中的应用

近年来,紧束缚模型方法被广泛应用于计算生物大分子体系.本文从第一性原理出发,根据紧束缚近似的思想,推导出生物大分子体系中的单电子运动方程.在此基础上给出了紧束缚模型方法中所涉及参数(在位能和迁移积分)的计算公式,在理论上完善了紧束缚模型方法.我们将所提出的参数化方法应用于理想B型DNA分子,给出了各种序列组合下的在位能和迁移积分.此外,我们还计算了周期性DNA分子poly(A)-poly(T)和poly(G)-poly(C)中空穴在位能和迁移积分随格点间距离的变化,为改进现有的SSH极化子模型提供了新的思路,有助于DNA中电荷输运的极化子机理的研究.     

The Ising version of the t–J model

The t–J model is analysed in the limit of strong anisotropy, where the transverse components of electron spin are neglected. We propose a slave-particle-type approach that is valid, in contradiction to many of the standard approaches, in the low-doping regime and becomes exact for a half-filled system. We describe an effective method that allows to numerically study the system with the no-double-occupancy constraint rigorously taken into account at each lattice site. Then, we use this approach to demonstrate the destruction of the antiferromagnetic order by increasing the doping and formation of Nagaoka polarons in the strong interaction regime.     

Investigation on the structural and electrical properties of NdSrNi1−xCrxO4+δ (0.1≤x≤0.9) system

The phases NdSrNi_1−xCr_xO_4+δ (0.1≤x≤0.9) have been synthesized by modified sol-gel method and subsequent annealing at 1250 °C in 1 atm of flowing argon. X-ray diffraction (XRD) analysis and electrical resistivity have been measured at room temperature. Rietveld refinement shows that all compositions with x>0.1 were found to crystallize in the tetragonal K₂NiF₄ type structure in the space group I4/mmm, while for x=0.1, a mixture of two phases with the tetragonal space group I4/mmm and the orthorhombic space group Fmmm. Variations of a and c parameters show a complex behavior with increasing chromium content. It was established that compounds with chromium content less then x≤0.5 are oxygen-deficient, while for x>0.5 the sample are oxygen-overstoichiometric. The NdSrNi_0.5Cr_0.5O_4+δ compound exhibits semiconductive behavior and the electrical transport mechanism agrees with the non-adiabatic small polaron hopping model in the temperature ranges 298-493, 493-573 and 573-703 K separately.     

磁场中多原子极性晶体中体极化子的基态能量

研究磁场中多原子极性晶体中体极化子的性质,采用线性组合算符法,分别导出强,弱耦合情形下体极化子的基态能量。     

The polaron effect on the binding energy of a shallow donor impurity in quantum-well wires in an electric field

Using a variational technique, the effect of electron-longitudinal optical (LO) phonon interaction on the ground and the first few excited states of a hydrogenic impurity in a semiconductor quantum wire of rectangular cross section under an external electric field is studied theoretically for the impurity atom doped at various positions. The results for the binding energy as well as polaronic correction are obtained as a function of the size of the wire, the applied uniform electric field and the position of the impurity. It is found that the presence of optical phonons changes significantly the values of the impurity binding energies of the system. Taking into account the electron–LO phonon interaction the 1s→2p_y and 1s→2p_z transition energies are calculated as a function of applied electric field for different impurity positions.     

Fe3O4薄膜的电输运及光诱导特性研究

用脉冲激光沉积法在(111)Si衬底上成功制备了高度择优取向的Fe₃O₄薄膜.电阻-温度关系表明Fe₃O₄薄膜的Verwey转变(T_V)约在122 K,低温段(T_V)输运特征满足Mott变程跳跃模型,高温段(T>T_V)为小极化子输运.激光作用下的光电导实验发现,在整个温区表现为光致电阻率减小,而且低温段的电阻变化率比高温段要大很多.分析认为Fe₃O₄薄膜的光致电阻率变化主要与激光激发t_2g电子的转移有关. 关键词： 3O₄薄膜')" href="#">Fe₃O₄薄膜 小极化子 光诱导特性