Dynamics of charge transfer at Au/Si metal-semiconductor nano-interface

An ab initio analysis of the periodic array of Au/Si nanostructure composed of gold clusters linked to silicon quantum dot (QD) co-doped by aluminium and phosphorus along [111] direction is presented in this paper. The density functional theory (DFT) is used to compute the electronic structure of the simulated system. Non-adiabatic coupling implemented in the form of dissipative equation of motion for reduced density matrix is used to study the phonon-induced relaxation in the simulated system. The density of states clearly shows that the formation of Au–Si bonds contributes states to the band gap of the model. Dynamics of selected photo-excitations shows that hole relaxation in energy and in space is much faster than electron relaxation, which is due to the higher density of states of the valence band.     

Waiting times of entangled electrons in normal–superconducting junctions

We consider a normal–superconducting junction in order to investigate the effect of new physical ingredients on waiting times. First, we study the interplay between Andreev and specular scattering at the interface on the distribution of waiting times of electrons or holes separately. In that case the distribution is not altered dramatically compared to the case of a single quantum channel with a quantum point contact since the interface acts as an Andreev mirror for holes. We then consider a fully entangled state originating from splitting of Cooper pairs at the interface and demonstrate a significant enhancement of the probability to detect two consecutive electrons in a short time interval. Finally, we discuss the electronic waiting time distribution in the more realistic situation of partial entanglement.     

PN结电容与正向直流偏压的关系

半导体PN结具有电容的性质．在正向直流偏压下,理论计算表明,PN结扩散电容的对数与正向偏压成正比．实验发现,当正向偏压小于30mV时,这种线性关系是成立的;当正向偏压大于30mV时,会偏离这种线性关系．由于PN结还具有电阻特性,对交流信号的相位有影响．随着正向偏压增大,交流信号的相位变化出现一极值．如果将PN结等效为一个电容和一个电阻并联,就可以定性解释这种变化关系．     

Superinsulator–superconductor duality in two dimensions

For nearly a half century the dominant orthodoxy has been that the only effect of the Cooper pairing is the state with zero resistivity at finite temperatures, superconductivity. In this work we demonstrate that by the symmetry of the Heisenberg uncertainty principle relating the amplitude and phase of the superconducting order parameter, Cooper pairing can generate the dual state with zero conductivity in the finite temperature range, superinsulation. We show that this duality realizes in the planar Josephson junction arrays (JJA) via the duality between the Berezinskii–Kosterlitz–Thouless (BKT) transition in the vortex–antivortex plasma, resulting in phase-coherent superconductivity below the transition temperature, and the charge-BKT transition occurring in the insulating state of JJA and marking formation of the low-temperature charge-BKT state, superinsulation. We find that in disordered superconducting films that are on the brink of superconductor–insulator transition the Coulomb forces between the charges acquire two-dimensional character, i.e. the corresponding interaction energy depends logarithmically upon charge separation, bringing the same vortex-charge-BKT transition duality, and realization of superinsulation in disordered films as the low-temperature charge-BKT state. Finally, we discuss possible applications and utilizations of superconductivity–superinsulation duality.     

Dynamics of the current-driven Josephson junction

The irreversible macroscopic dynamics of the Josephson junction coupled to external wires acting as a current source is derived rigorously from the underlying microscopic Hamiltonian quantum mechanics. The external systems are treated in the singular coupling limit. The use of this limit is explicitly justified via an interpretation of the singular coupling limit in terms of the relative magnitudes of system, reservoir, and coupling energies. The qualitative behavior of the macroscopic dynamical equations is shown to depend sensitively and crucially on the interaction between the wires and the superconductors and on the size of the wires: the dc Josephson effect only happens when one lets Cooper pairs be driven into the junction by collective (i.e., small) reservoirs.     

Research on flux-flow oscillators induced different types of pinning potentials

We have studied dynamics of Josephson vortices in strongly coupled long Josephson junctions stack, such as an intrinsic Josephson junction, by numerical simulations based on coupled sine–Gordon equations considering a periodic pinning potential. In this report, we investigate flux-flow oscillators induced two types of pinning potentials. One is magnetic periodic pinning potential, the other is periodic bias currents. Our results demonstrate that the periodic pinning potential can develop the generated power of flux-flow oscillator in certain condition.     

PN结物理特性的开放式测量实验方法研究

开放式、综合性量测实验的设计与应用,在巩固基础理论知识的同时,能够有效培养学生的动手实践能力、数据处理及分析能力,一定程度代表着大学物理实验课程的教学模式改革方向。以PN结物理特性的测量实验为例,基于通用型仪器与元器件的积木式组合,设计出简单、适用的实验电路;t=17.95℃时所采集的原始实验数据经三种模式回归分析,比较验证了PN结扩散电流与电压间遵循的玻尔兹曼分布律;计算出的玻尔兹曼常数与FD-PN-4测定仪的量测值相比,其结果说明了开放式测量实验方法的有效性。     

Structural characterizations of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by transmission electron microscopy

We have investigated the structure of Co₂MnSi/MgO/Co₂MnSi magnetic tunneling junctions with different tunnel magnetoresistance values depending on the in situ annealing temperatures just after the deposition of the upper Co₂MnSi electrodes. The nano-beam diffraction patterns indicated that the degree of order of the upper Co₂MnSi electrode annealed at 550 °C was higher than that of an electrode annealed at 400 °C. Moreover, the degree of the L2₁ order of the upper Co₂MnSi electrode annealed at 550 °C was even lower than that of the lower Co₂MnSi electrode annealed at an almost equal temperature of 600 °C. Atomic-scale observation using a high-angle annular dark-field (HAADF) method distinctly showed the existence of the L2₁-ordered regions in the B2-ordered matrix in the upper Co₂MnSi electrode annealed at 400 °C.     

170 keV Proton radiation effects on low-frequency noise of bipolar junction transistors

In this paper, the electrical properties and low-frequency noise for bipolar junction transistors irradiated by 170?keV proton are examined. The result indicates that for the sample under proton irradiation with fluence 1.25?×?10^14?p/cm², base current I_B in low bias range (V_BE < 0.7?V) increases due to superimposition of radiation-induced recombination current, while the gain decreases significantly. Meanwhile, the low-frequency noise increases in the proton-irradiated sample. By analysis of evolution of parameters extracted from low-frequency noise power spectra, it is demonstrated that radiation-induced noise is mainly originated from carrier fluctuation modulated by generation–recombination centers (G–R centers) located at the interface of Si/SiO₂, which are introduced by proton-radiation-induced defects. It is also confirmed that the electrical properties and noise behavior of irradiated sample are mostly affected by the carrier recombination process caused by G–R centers at the interface of Si/SiO₂ than by G–R centers in EB junctions.