Highly Elastic Melamine Graphene/MWNT Hybrid Sponge for Sensor Applications

The rapidly increased interest in multifunctional nanoelectronic devices, such as wearable monitors, smart robots, and electronic skin, motivated many researchers toward the development of several kinds of sensors in recent years. Flexibility, stability, sensitivity, and low cost are the most important demands for exploiting stretchable or compressible strain sensors. This article describes the formation and characteristics of a flexible, low-cost strain sensor by combining a commercial melamine sponge and a graphene/carbon nanotubes hybrid. The composite that emerged by doping the highly elastic melamine sponge with a highly conductive graphene/carbon nanotubes hybrid showed excellent piezoresistive behavior, with low resistivity of 22 kΩ m. Its function as a piezoresistive material exhibited a high sensitivity of 0.050 kPa⁻¹ that combined with a wide detection area ranging between 0 to 50 kPa.     

复合材料层合板面内压阻效应层合理论研究

应用经典层合板理论和静电学理论,研究了正交异性介质的电导率,压导系数和压阻系数的特性,导出了Ｃａｕｃｈｙ应变空间中压阻系数与压导系之间的关系;建立了平面应力状态下层合板面内压阻效应的层合理论。     

第一性原理研究[111]晶向硅纳米线电子结构，光学性质与压阻特性的应变效应

基于密度泛函理论体系下的广义梯度近似（GGA）,利用第一性原理方法计算研究了单轴应变对[111]晶向硅纳米线的电子结构、光学性质以及压阻性质的影响．能带结构和光学性质的结果表明：压应变导致硅纳米线的带隙明显线性减小,且使其由直隙半导体转变为间隙半导体,而施加拉应变后硅纳米线仍为直隙半导体材料,但是带隙略有减小,且价带顶附近的能带线产生了较为复杂的变化．由于能带的应变效应导致其光学性质也相应发生了较大改变：拉应变使硅纳米线的介电峰出现宽化现象,低能区内的光吸收增强,静态折射率和反射率峰值增大,而压应变的效果则相反．结合能带结构与压阻系数计算模型得到的压阻特性结果表明：随着压应变的增加压阻系数单调减小,这主要归因于空穴浓度随压应变显著变化引起的;而拉应变作用时,压阻系数呈现波动趋势,这主要是由于空穴有效传输质量的增加程度和载流子浓度的增加程度不同而相互竞争导致的．上述计算结果表明,设计基于硅纳米线的光电和力电器件时,需考虑其应变效应．     

Design,fabrication, testing and mechanical analysis of bulk-micromachined flowmeters

Micromachined piezoresistive flowmeters with four different types of sensing structures have been designed, fabricated and tested. Piezoresistors were defined at the end of the sensors through p-diffusion, and their values were about 3.5 kΩ Wheatstone bridge was configured with the piezoresistors in order to measure the output response. The output voltage increases with increasing flow rate of air, obeying determined relationships. The testing results show that the sensors that are designed for measuring 10L/M in full operational range have desired sensitivities. The sensor chip is manufactured with bulk-micromachining technologies, requiring a set of seven masks.     

第一性原理研究[111]晶向硅纳米线电子结构,光学性质与压阻特性的应变效应

基于密度泛函理论体系下的广义梯度近似(GGA),利用第一性原理方法计算研究了单轴应变对[111]晶向硅纳米线的电子结构、光学性质以及压阻性质的影响.能带结构和光学性质的结果表明:压应变导致硅纳米线的带隙明显线性减小,且使其由直隙半导体转变为间隙半导体,而施加拉应变后硅纳米线仍为直隙半导体材料,但是带隙略有减小,且价带顶附近的能带线产生了较为复杂的变化.由于能带的应变效应导致其光学性质也相应发生了较大改变:拉应变使硅纳米线的介电峰出现宽化现象,低能区内的光吸收增强,静态折射率和反射率峰值增大,而压应变的效果则相反.结合能带结构与压阻系数计算模型得到的压阻特性结果表明:随着压应变的增加压阻系数单调减小,这主要归因于空穴浓度随压应变显著变化引起的;而拉应变作用时,压阻系数呈现波动趋势,这主要是由于空穴有效传输质量的增加程度和载流子浓度的增加程度不同而相互竞争导致的.上述计算结果表明,设计基于硅纳米线的光电和力电器件时,需考虑其应变效应.     

Effects of compression cycles and precompression pressure on the repeatability of piezoresistivity for carbon black‐filled silicone rubber composite

We studied the influences of the compression cycles and the precompression pressure on the piezoresistivity of carbon black‐filled silicone rubber composite. The experimental results show that if the load pressure is less than the maximum pressure in the precompression cycle, the repeatability of the piezoresistivity is improved with the increase of the compression cycles. Once the load pressure surpasses the maximum pressure in the precompression cycle, the piezoresistivity of the composite is changed distinctly. The experimental phenomena are explained and described qualitatively by analyzing the changes in the composite resistance under the zero pressure and the slippage of the molecule chain during the compression. © 2008 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 46: 1050–1061, 2008     

Enhanced piezoresistivity in Ni--silicone rubber composites

This paper reports that the nickel--silicone rubber composites with enhanced piezoresistivity were synthesized with much reduced nickel concentration. A large piezosensitivity of 0.716/kPa and a gauge factor of 600 have been obtained for a composite sample with filler-polymer ratio of 2.7:1 by weight. Measurements of resistance as a function of uniaxial force reveal that the piezoresistance arises predominantly from the internal heterogeneity of the material and the effect of geometrical changes of samples under pressure is neglectably small. The nonlinear current--voltage characteristic of the composite depends strongly on the filler content, the initial compression and the electrical current flowing in the sample. Ohmic behaviour has been observed only in the highly compressed samples. The breakdown strength decreases with increasing filler content of the composite. Both I-V and R-f characteristics indicates that the resistivity of the composites decreases with electrical field, suggesting that the composite may also be used to make voltage sensitive resistors for protecting circuits. All the experimental results favour a quantum tunnelling mechanism of conductivity. It finds that the concept `negative resistance', often used to describe the phenomena that current decreases with increasing voltage, is not appropriate and should be avoided.