基于QSAR对偶氮染料光响应性及降解路径研究

采用密度泛函理论方法计算偶氮染料类化合物的量子化学参数,研究该类化合物结构与光响应活性的定量构效关系(QSAR),应用多元回归方法建立的方程具有显著统计学意义,并结合紫外光谱结果进行降解过程预测.结果表明:光催化体系中会最先造成偶氮染料的N=N键与萘环的断开,然后再生成其他副产物,副产物再经过电子转移、开环等一系列反应...     

细菌视紫红质膜快速光开关的实验研究

建立了“脉冲激光－连续探测光－连续擦除光”的实验系统。在532nm的调Q脉冲激发光和不同波长的连续探测光作用下，研究了细菌视紫红质（BR）膜的光循环过程中的快速响应特性及各中间态的快速光吸收特性。观察到了微秒量级的快速光开关现象，并分析了激发光脉冲作用结束时，各中间态上细菌视紫红质分子的分布。     

Electrochemical Deposition of Azobenzene‐Containing Network Films with High‐Contrast and Stable Photoresponse

To fabricate stable photoresponsive films and devices, a cross‐linked network that firmly fixes the position of the chromophores is an ideal structure, because aggregation and/or phase separation effects of chromophores in matrix can be effectively restrained in such robust films. Herein, the in situ electrochemical deposition (ED) of azo‐based precursors containing multielectroactive carbazole units is utilized to construct highly cross‐linked photoresponsive films. 2‐(4‐(9,9‐bis(6‐(9H‐carbazol‐9‐yl)hexyl)‐9H‐fluoren‐2‐yl)phenyl)‐1‐(4‐(9,9‐bis(6‐(9H‐carbazol‐9‐yl)hexyl)‐9H‐fluoren‐7‐yl)phenyl)diazene (BFCzAzo) with high solvability in electrolyte solution, high electroactivity, and highly efficient photoresponsive ability is synthesized by Suzuki coupling reaction as a kind of ED precursor. A highly cross‐linked photoresponsive film is fabricated by ED method using BFCzAzo as ED precursor. The film can be patterned in large area by irradiation with interfering laser beam (355 nm), and the pattern possesses excellent thermal stability and insoluble ability in both organic and inorganic solvents. Excellent reversibility of the nanostructures is demonstrated by irradiation with 550 nm laser beam.

     

室温生长ZnO薄膜晶体管的紫外响应特性

在室温下采用射频磁控溅射法制备了以ZnO薄膜为沟道层的薄膜晶体管(TFTs).研究表明ZnO薄膜在紫外区具有较高的吸收率,并且ZnO-TFTs对紫外光照射较为敏感.因此,进一步深入研究了ZnO-TFTs紫外光照下的输出和转移特性,结果表明,紫外光照将引起较为明显的光响应电流,且经过光照的器件在光源移除7天后,ZnO沟道层中仍能观察到残余电导现象,其原因可以归结为紫外光辐射在ZnO沟道层中引入了一定数量的氧空位施主态缺陷.     

热注射法合成Cu2 SnSe3纳米晶及其光电转换性能

以乙酰丙酮铜、无水氯化亚锡为金属源,Se/OLA悬浊液为硒源,在油胺溶剂中热注射合成了Cu2 SnSe3纳米晶.采用TEM、XRD、EDS分别对典型纳米晶产物的形貌、物相和组成做了分析表征.通过不同反应温度的条件实验,研究了反应温度对最终产物的影响,探讨了相关规律.采用光电化学池评价了纳米晶的光电转换性能,结果表明Cu2 SnSe3纳米晶光电转换性能优良,表现出较好的应用前景.     

Post‐Treatment of CH3NH3PbI3/PbI2 Composite Films with Methylamine to Realize High‐Performance Photoconductor Devices

Organometallic halide perovskites have attracted great research interest as light‐active materials for use in optoelectronics. Here, we report a high‐performance photoconductor based on a methylammonium lead iodide (MAPbI₃) film that was prepared from a methylamine‐treated MAPbI₃/PbI₂ perovskite film. An ultrahigh responsivity of 3.6 A W^?1 and detectivity of 5.4×10¹² Jones were obtained for the film under 0.5 mW cm^?2 white‐light illumination. In addition, under 420 nm light irradiation, the film exhibited its highest responsivity and detectivity of 30 A W^?1 and 2.4×10¹⁴ Jones, respectively. The excellent photo‐response performance results from the improved electronic quality and suppressed nonradiative recombination channels of the treated perovskite thin film.     

Edge assisted epitaxy of CsPbBr3 nanoplates on Bi2O2Se nanosheets for enhanced photoresponse

Bi$_{2}$O$_{2}$Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties. However, it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi$_{2}$O$_{2}$Se nanosheets. Here, a two-step chemical vapor deposition (CVD) route was used to directly grow the CsPbBr$_{3}$ nanoplate-Bi$_{2}$O$_{2}$Se nanosheet heterostructures. The CsPbBr$_{3}$ nanoplates were selectively grown on the Bi$_{2}$O$_{2}$Se nanosheet along the edges, where the dangling bonds provide the nucleation sites. The epitaxial relationships between CsPbBr$_{3}$ and Bi$_{2}$O$_{2}$Se were determined as ${[200]}_{\rm Bi_{2}O_{2}Se}||{[110]}_{\rm CsPbBr_{3}}$ and ${[110]}_{\rm Bi_{2}O_{2}Se}||{[200]}_{\rm CsPbBr_{3}}$ by transmission electron microscopy characterization. The photoluminescence (PL) results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-I band arrangement at CsPbBr$_{3}$/Bi$_{2}$O$_{2}$Se interface, which was confirmed by ultraviolet photoelectron spectroscopy (UPS) and Kelvin probe measurements, and makes the photogenerated carriers transfer from CsPbBr$_{3}$ to Bi$_{2}$O$_{2}$Se. Importantly, the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi$_{2}$O$_{2}$Se sheets, and the fast rise and decay time in microsecond. These results indicate that the direct epitaxy of the CsPbBr$_{3}$ plates on the Bi$_{2}$O$_{2}$Se sheet may improve the optoelectronic performance of Bi$_{2}$O$_{2}$Se based devices.     

Visible Light-Driven Alkyne-Grafted Ethylene-Bridged Azobenzene Chromophores for Photothermal Utilization

Molecular photoswitches are considered to be important candidates in the field of solar energy storage due to their sensitive and reversible bidirectional optical response. Nevertheless, it is still a daunting challenge to design a molecular photoswitch to improve the low solar spectrum utilization and quantum yields while achieving charging and discharging of heat without solvent assistance. Herein, a series of visible-light-driven ethylene-bridged azobenzene (b-Azo) chromophores with different alkyne substituents which can undergo isomerization reactions promoted in both directions by visible light are reported. Their visible light responsiveness improves their solar spectrum utilization while also having high quantum yields. In addition, as the compounds are liquids, there is no need to dissolve the compounds in order to exploit this switching. The photoisomerization of b-Azo can be adjusted by alkyne-related substituents, and hexyne-substituted b-Azo is able to store and release photothermal energy with a high density of 106.1 J·g⁻¹, and can achieve a temperature increase of 1.8 °C at a low temperature of −1 °C.     

氧化铁电极的半导体性能和光电化学 Ⅴ.烧结掺锌氧化铁电极的光电响应

Somorjai等曾报道在不同电势下,测得掺MgO氧化铁光电极具有n,p两种类型的光响应^[1]。最近本实验室首次报道了在同一电势下,热形成的掺MgO-Fe₂O₃光电极具有n,p型双重光响应共存现象^[2],由于其在电催化等中可能的应用价值引起了较广泛的兴趣。