Implementing a Two-Photon Three-Degrees-of-Freedom Hyper-Parallel Controlled Phase Flip Gate Through Cavity-Assisted Interactions

Hyper-parallel quantum information processing is a promising and beneficial research field. Herein, a method to implement a hyper-parallel controlled-phase-flip (hyper-CPF) gate for frequency-, spatial-, and time-bin-encoded qubits by coupling flying photons to trapped nitrogen vacancy (NV) defect centers is presented. The scheme, which differs from their conventional parallel counterparts, is specifically advantageous in decreasing against the dissipate noise, increasing the quantum channel capacity, and reducing the quantum resource overhead. The gate qubits with frequency, spatial, and time-bin degrees of freedom (DOF) are immune to quantum decoherence in optical fibers, whereas the polarization photons are easily disturbed by the ambient noise.     

贝克曼AllegraTM21R型超高速离心机故障排除一例

贝克曼Allegra^TM 21R型超高速离心机开机后，操作面板上出现错误代码“28”，离心机不旋转。离心机的电机采用无刷感应驱动，由电机驱动电源模块BSMl0GD60DN2驱动离心机的电机。故障是由于电源模块BSMl0GD60DN2损坏引起的。采用东芝三相桥式IGBT电源模块MG25Q6ES42代替BSMl0GD60DN2，并更换已烧毁的栅极电阻后。开机试验，仪器恢复正常。     

Optical Glucose Monitoring Based on Femtosecond Two-Color Pulse Interferometry

We demonstrate the potential of femtosecond two-color pulse interferometry for in vitro optical glucose monitoring, by dispersion of the group refractive index in a glucose solution sample with respect to a red-color light and a blue-color light. By comparison with femtosecond one-color pulse interferometry, the basic performance of the present system with regard to sensitivity, quantitativeness, and tolerance to surrounding disturbances, is evaluated. The resulting accuracy and precision of glucose determination are 77 and 118mg/dl for 10-mm-sample-thickness, respectively. This near-common-path configuration of the two-color pulse light provides good stability to fluctuations of sample temperature, which is important in clinical applications. Considering the performance of femtosecond two-color pulse interferometry as an optical glucose sensor, a suitable measurement site for in vivo optical glucose monitoring is discussed.     

PT Symmetry in Quantum Field Theory

The Hamiltonian H specifies the energy levels and the time evolution of a quantum theory. It is an axiom of quantum mechanics that H be Hermitian. The Hermiticity of H guarantees that the energy spectrum is real and that the time evolution is unitary (probability preserving). In this talk we investigate an alternative formulation of quantum mechanics in which the mathematical requirement of Hermiticity is replaced by the more physically transparent condition of space-time reflection (PT) symmetry. We show that if the PT symmetry of a Hamiltonian H is not broken, then the spectrum of H is real. Examples of PT-symmetric non-Hermitian Hamiltonians are H=p ²+ix ³ and H=p ²-x ⁴. The crucial question is whether PT-symmetric Hamiltonians specify physically acceptable quantum theories in which the norms of states are positive and the time evolution is unitary. The answer is that a Hamiltonian that has an unbroken PT symmetry also possesses a physical symmetry that we call C. Using C, we show how to construct an inner product whose associated norm is positive definite. The result is a new class of fully consistent complex quantum theories. Observables exhibit CPT symmetry, probabilities are positive, and the dynamics is governed by unitary time evolution.     

0.18μm CMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Q_bd)和击穿电压(Voltage to Breakdown, V_bd). 研究结果表明，低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小，而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大，击穿电压测试值也发现与击穿电量 关键词： 薄氧 可靠性 击穿电压 击穿电量     

A Reality Proof in PT-Symmetric Quantum Mechanics

We review the proof of a conjecture concerning the reality of the spectra of certain PT-symmetric quantum mechanical systems, obtained via a connection between the theories of ordinary differential equations and integrable models. Spectral equivalences inspired by the correspondence are also discussed.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

Search for Resolution of Chiral Fluorohalogenomethanes and Parity‐Violation Effects at the Molecular Level

The first observation of a parity‐violation effect in molecules induced by weak interactions is still a dream that requires the synthesis and, eventually, the resolution of the enantiomers of well‐chosen simple chiral molecules together with an appropriate experimental set‐up for high‐resolution spectroscopy. Performing IR spectroscopy on highly enantiomerically enriched samples of bromochlorofluoromethane succeeded in giving an upper limit of 10^?13 for the relative vibrational energy difference between the two enantiomers. These results led us to conceive a new experimental set‐up based on a supersonic molecular beam and to work on other chiral molecules, such as chlorofluoroiodomethane. A synthesis of (±)‐CHClFI from racemic chlorofluoroiodoacetic acid should, in the near future permit the preparation of optically active samples of this haloform. The development of molecular beam spectroscopy using a two‐photon Ramsey‐fringes experiment should allow us to reach the precision needed to observe parity violation. These experimental challenges, which stimulate a close collaboration between chemists and physicists, are presented. The success of these projects would open the route to new information on the molecular Hamiltonian, a better knowledge of the electroweak interaction, and a better control of the various chirality‐related properties of simple molecules.     

双折射光纤中克尔效应及光纤－光学逻辑门

本文详细地研究了单模双折射光纤中的克尔效应．讨论了其应用于光纤－光学逻辑门的优点,给出了有关的理论分析和计算结果以实验装置,确定了强度型逻辑门的“１／０”状态,测出了输出光脉冲宽度．理论分析和实验结果符合良好．