基于交叉共轭结构的功能材料

近年来,人们对交叉共轭体系的制备、性能以及理论研究方面产生了极大的兴趣。本文综述了近期国内外在交叉共轭体系研究方面取得的一些最新进展,重点介绍了其在自组装、有机电致发光和离子检测等方面的最新发展动态。最后还对本课题组在交叉型p-n双嵌段寡聚物方面的研究作了详细的介绍,并对一些热点问题作了展望。     

无机固体材料中的忆阻效应

缺陷调控是固体化学中的基本问题,也是决定材料性能的核心要素。基于缺陷调控的忆阻效应将给未来电子信息领域带来全新的变革。本文综述了无机固体材料中忆阻效应的研究进展,主要总结了忆阻效应的产生机制和忆阻材料的类型,结合原子级p-n结的相关工作,提出深入明确电场下缺陷迁移机制将是从无机固体化学角度研究忆阻效应的重要方向。     

Microwave-assisted sol-gel synthesis of CeO2–NiO nanocomposite based NO2 gas sensor for selective detection at lower operating temperature

The progress in the development of gas sensors has considerably grown using some novel nanomaterials of metal, metal oxide and composite. In the current study, we intended and evaluated the properties of nanomaterials like CeO₂, NiO, and CeO₂–NiO composite and its application as NO₂ gas sensor. Sensing of low concentration of NO₂ gas at optimum functional temperature was succeeded using CeO₂–NiO nanocomposites (NCs) film. The working temperature ranges in between 100 and 225 ?°C. Highly crystalline nanomaterials (CeO₂, NiO and CeO₂–NiO) have been prepared by applying microwave-assisted sol-gel route. The as-prepared nanomaterials are characterized for their structure, size, morphology and constitution by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis. XRD studies of nanoparticles reveal the formation of nanoscale CeO₂ and NiO with crystallite size 26, 23 ?nm, respectively. Both are having a face centered cubic structure. The nanocomposite (NC) Ce:Ni ?= ?60:40 has crystallite size of 13 ?nm. XRD study of NCs shows assimilation of Ni metal into the ceria and proves physical similarities of two phases. It can be observed from SEM that prepared NC has a porous surface which enables more surface active sites for adsorbing oxygen. The optical properties are measured with the help of UV–Vis. Spectroscopy. Optical band gaps of 3.19, 3.41 and 2.9 ?eV were observed for CeO_2, NiO nanoparticles (NPs) and CeO₂–NiO NC, respectively. Gas sensing properties state that the NC material shows a higher gas response % of 67.34% for NO₂ gas (25 ?ppm) at comparatively low operating temperature (125 ?°C). It gives response time as (～28 ?s) and the recovery (～54 ?s). NiO incorporation in CeO₂ results in a decline of operating temperature of NC and improves the sensing features.     

Facile synthesis of Z-scheme NiO/α-MoO3 p-n heterojunction for improved photocatalytic activity towards degradation of methylene blue

In this article, Z-scheme NiO/α-MoO₃ p-n heterojunction is successfully synthesized by a facile hydrothermal route. The phase and nanostructures are researched through a series of characterizations, such as XRD, SEM, TEM, EDX, XPS and DRS. It is confirmed that the NiO nanoparticles are deposited homogeneously on one dimensional α-MoO₃ nanobelts and p-n heterojuction is constructed at the interface of α-MoO₃ and NiO. Photocatalytic activity of the as-synthesized photocatalysts is investigated by photodegradation of methylene blue (MB) under simulated solar light irradiation. Compared with bare α-MoO₃, the NiO/α-MoO₃ p-n heterojunction exhibits significantly improved photocatalytic activity and photostability for MB degradation. The improvement in the photocatalytic performance can be attributed to the optimization of the charge transport pathway offered by Z-scheme heterojunctions, which can promote the effective separation of electron-hole pairs. The results indicate that Z-scheme NiO/α-MoO₃ p-n heterojunction is a novel and efficient photocatalyst with potential application for the removal of organic contaminant in wastewater.     

Ag-BiVO_4复合光催化剂的制备及其可见光光催化机理的研究

BiVO4是一种优良的可见光光催化剂,但是低电荷分离效率和表面吸附性差能严重地制约了其光催化活性的提高.我们通过简单易行的一步水热法制备了银-钒酸铋复合光催化剂(Ag-BiVO4).通过XRD、EDS、XPS、SEM、DRS、PL和BET等手段对其结构和光化学性质进行了详细表征.结果表明,银以Ag和Ag2O的形态存在于催化剂表面.在可见光照射下(λ≥420nm),以染料罗丹明B(Rhodamine B,RhB)和无色小分子水杨酸(Salicylic acid,SA)为模型污染物,考察了Ag-BiVO4和BiVO4的光催化活性.结果表明:Ag的引入能有效提高BiVO4的可见光催化活性,当Ag掺杂量为1.44%时,其光催化效率最高.吸附实验表明Ag的存在极大地加强了RhB在光催化剂表面的吸附.进一步实验表明Ag2O和Ag的相互协同作用使Ag/Ag2O-BiVO4可见光催化活性得到显著提高,其中Ag2O因与BiVO4形成p-n型异质结对其催化活性起到主导作用.     

异质结型AgBr/CuO光催化剂的合成、光崔化活性及再生

采用沉淀法制备了具有p-n异质结结构的AgBr/CuO可见光催化剂,对其结构进行了表征,通过甲基橙溶液的降解率评价了AgBr/CuO的光催化活性,并通过活性物种测试及能带结构分析推测了其光催化机理,采用3％(质量分数)溴水对使用后的AgBr/CuO进行了再生处理.结果表明,在可见光照射下,0.1gAgBr/CuO光催化剂30 min对甲基橙溶液(初始浓度为15 mg/L)的降解率高达92％,远高于同等条件下的AgBr.AgBr/CuO光催化活性提高的原因是AgBr与CuO的复合一方面使催化剂的禁带宽度变宽,提高了光生电子与光生空穴的氧化还原能力;另一方面,在两者之间形成了p-n型异质结结构,有利于光生电子的转移及光生电子与空穴的分离.采用绿色环保的溴水再生法可显著恢复催化剂的光催化活性.     

p-n结二极管结区边界附近的交流电特性

基于p-n结二极管的理想工作状态的基本假定，推导了二极管在交流电下工作时其基区和p-n结分界面附近上的时间常数与二极管空间尺寸、扩散长度、载流子寿命和外加交流电频率等的依赖关系.结果发现高频和低频两种状态下二极管各类特征参量对时间常数的作用不一样.低频条件下，二极管的时间常数由材料本身来决定，与外加电流频率无关.高频情况下，时间常数则与半导体材料性质无关，只由外加交流电的频率来决定.     

Electrochemical etching of silicon carbide

Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined. At p-n junctions (p-type layer on a n-type 6H-SiC substrate) a selective etching of the p-type epilayer could be achieved. For a planar 6H-4H polytype junction (n-type, both polytypes with equal doping concentrations) the 4H region was selectively etched under UV illumination. Thus polytype junctions could be marked by electrochemical etching. With HCl instead of HF no etching of SiC occurs, but a SiO₂ layer (thickness up to 8 μm) is formed by anodic oxidation. Received: 29 October 1998 / Accepted: 27 January 1999     

HgCdTe红外探测器离子注入剂量优化研究

在中波响应波段的p型Hg_0.709Cd_0.291Te(MCT)分子束外延生长薄膜上，利用材料芯片技术获得叠加注入不同硼离子剂量的系列大光敏元面积(500μm×500μm)的n-op-p结.通过测量液氮温度下不同离子注入剂量单元的电流-电压特性和对零偏微分电阻R₀分析，观测到p-n结的性能与硼离子注入剂量明显的依赖关系.在另一片薄膜材料(镉组分值为0.2743)上通过该方法获得R₀A优于现有常规数值的探测器单元. 关键词： p-n结 离子注入 碲镉汞薄膜     

一种印刷型薄膜太阳能电池p-n结调制技术

能带值为0.5~0.85 eV材料的稀缺是多结太阳能电池面临的一个主要挑战,本文使用非真空的机械化学法合成了能带值为0.83 eV的Cu₂SnS₃化合物,使用印刷技术将其制备成吸收层薄膜,并采用superstrate太阳能电池结构(Mo/Cu₂SnS₃/In₂S₃/TiO₂/FTO glass)对其光伏特性进行了研究.实验表明所制备的太阳能电池短路电流密度、开路电压、填充因子和转换效率分别为12.38 mA/cm²、320 mV、0.28和1.10%.此外,为更好地满足多结太阳能电池对电流匹配的需求,本文对所制备太阳能电池的Cu₂SnS₃/In₂S₃ p-n结进行了分析.通过在p-n结界面植入一层薄的疏松缓冲层,使调制后的太阳能电池短路电流密度从最初的12.38 mA/cm²增加到了23.15 mA/cm²,相应太阳能电池转换效率从1.1%增加到了1.92%.该p-n调制技术对印刷型薄膜太阳能电池具有重要借鉴意义.