Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

超快光电测量技术

本文综述了近年来趔快光电测量技术的新进展，其中包括扭快光电材料的特性、高速光电器件的基本原理，着重介绍了若干主要的用快光电测量技术．     

π-CONJUGATED OLIGOMERS IN SUPRAMOLECULAR CRYSTALS AND THEIR OPTOELECTRONIC FUNCTIONS

Functional organic molecular materials and conjugated oligomers or polymers now allow the low-cost fabrication of thin films for insertion into new generations of electronic and optoelectronic devices. The performance of these devices relies on the understanding and optimization of several complementary processes. Our goal is to discuss the relationship between the molecular stacking structures and their optoelectronic properties that are of importance in all these areas. The concept of intermolecular interaction should be taken here in the special sense that is inter-dipole coupling. Specifically, we will address the impact of inter-dipole interaction between adjacent molecules in aggregate state on the solid-state emission properties.     

Design and Performances of a Carbon Monoxide Sensor Using Mid-Infrared Absorption Spectroscopy Technique at 4.6 µm

Based on infrared absorption spectroscopy technique, a carbon monoxide sensor was developed using the fundamental absorption band of carbon monoxide molecule at the wavelength around 4.6 µm. The developed sensor consists of pulse-modulated wideband incandescence, open ellipsoid light-collector gas-cell, dual-channel detector, and control and signal-processing module. With the prepared standard carbon monoxide gas sample, sensing characteristics on carbon monoxide were investigated using the sensor. Experimental results reveal that the limit of detection is about 10 ppm, the relative error at the limit of detection point is less than 14%, and that is less than 7.8% within the low concentration range of 20～180 ppm. The maximum absolute errors of 50 min long-term measurement on the 0 and 14 ppm CO gas samples are about 3 and 3.17 ppm, respectively, and the standard deviations are as small as 0.18 and 1.25 ppm, respectively. Compared with the reported carbon monoxide detection systems utilizing quantum cascaded lasers and distributed feedback lasers, the proposed sensor shows potential applications in carbon monoxide detection under the circumstances of coal-mine and environmental protection, by virtue of high performance, low cost, simple optical structure, and so on.     

Theoretical Study on the Structural and Optoelectronic Properties of the Linear Perfluorooctane Sulfonate （PFOS）

The perfluoroalkyl substances(PFS) have attracted considerable attention in recent years as a persistent global pollutant to be able to bioaccumulate in higher organisms.In this paper,theoretical analysis on electronic structures,optoelectronic properties and absorption spectra properties of the perflurooctane sulfonate(PFOS) in gas phase have been investigated by using the DFT/TD-DFT method.The geometric structures,electrostatic potentials,energy gaps,ionization potentials,electron affinities,frontier molecular orbital,excitation energies and absorption spectra for the ground state of PFOS were calculated.The result indicates that the ability of accepting electron of neutral PFOS is larger than that of anionic PFOS,while the electron excited by UV irradiation from HOMO to LUMO in the anionic PFOS is easier than that in the neutral PFOS.     

Theoretical investigation of substitution and end-group effects on poly(p-phenylene vinylene)s

Semi-empirical AM1 and ZINDO/S, as well as density function theory (DFT) method B3LYP/6-31G(d) quantum chemical calculations were carried out to study the electronic structures and optical properties of poly(p-phenylene vinylene) derivatives (PPVs) with 10 and 11 phenylene rings in the backbone. The calculations suggest that the assembly of alternate incorporation of CN and alkoxy substituted phenylene rings in the PPV backbone could be a good way to construct organic semiconductors with low HOMO/LUMO energy band-gaps. The effect of the end-group on the electronic structures and optical properties of the conjugated polymer was investigated by the calculated UV-Vis and UPS spectra. It was demonstrated that the aldehyde and phosphate end-groups have limited effects on the photophysical properties in the UV-visible range.     

Rapid Capillary-Assisted Solution Printing of Perovskite Nanowire Arrays Enables Scalable Production of Photodetectors

Despite recent progress in producing perovskite nanowires (NWs) for optoelectronics, it remains challenging to solution-print an array of NWs with precisely controlled position and orientation. Herein, we report a robust capillary-assisted solution printing (CASP) strategy to rapidly access aligned and highly crystalline perovskite NW arrays. The key to the CASP approach lies in the integration of capillary-directed assembly through periodic nanochannels and solution printing through the programmably moving substrate to rapidly guide the deposition of perovskite NWs. The growth kinetics of perovskite NWs was closely examined by in situ optical microscopy. Intriguingly, the as-printed perovskite NWs array exhibit excellent optical and optoelectronic properties and can be conveniently implemented for the scalable fabrication of photodetectors.     

自启动的非归零/归零码和光电时钟信号发生器及码型转换

采用双波长注入一包含伪随机码发生器与相位调制器的光电振荡器可以同时得到非归零(NRZ)码,归零(RZ)码以及光,电时钟信号输出。该方案使用了光域耦合的双环路结构,在不增加有源器件的条件下实现边模抑制。相位调制器用于反馈调制并同时实现占空比可调的非归零码到归零码的转换。双波长的注入排除了编码信号在振荡器中引入的非时钟频率成分。实验给出了10 Gb/s工作速率下的结果,得到了抖动为637 fs的光信号输出。转换得到的归零码信号占空比约为33%。输出电时钟信号的相位噪声在频偏10 kHz处为-109 dBc/Hz,边模抑制比为58 dB。     

有机张力半导体及其光电特性

分子张力作为空间设计的重要组成部分正成为调控有机半导体的重要手段。由于分子内产生的拉伸张力、扭曲/弯曲张力以及空间张力而导致p轨道排布重组和构型构象结构发生变化,最近各种几何与拓扑结构的高张力有机半导体材料相继被报道,这使得高张力有机半导体材料成为有机电子领域研究的焦点。为了进一步梳理分子张力在有机半导体材料中扮演的角色与价值,该综述从分子张力的类型、实验与理论量化以及可视化出发,总结了高张力共轭芳烃的分子设计策略、与其光电性能分子张力之间的关系,以及这类新兴材料在光电领域的应用。最后,对高张力共轭芳烃的研究前景进行了展望,阐述了该类材料所面临的机遇与挑战。