Environmentally Stable Polymer Gels with Super Deformability and High Recoverability Enhanced by Sub‐5 nm Particles in the Nonvolatile Solvent

It remains challenging to satisfy the combined performances for hydrogels with excellent mechanical behavior, high deformability, and super recoverability under harsh environmental conditions. In this study, we first established a strong polymer network via the crosslinking of polymer chains on the surfaces of sub‐5‐nm calcium hydroxide nanospherulites in ethylene glycol solvent. The organic gel expressed excellent mechanical properties such as a recoverable compressive engineering stress of 249 MPa and an elongation stress of 402 KPa, which was attributed to the uniform nanosized crosslinking structure as characterized by SEM. Moreover, the nonvolatile solvent remained in the gel, meaning that the sample can resist a wide temperature range of ?56 to 100 °C without losing the elastic properties. This novel organic gel could provide promising routes to develop the ideal elastic carriers for wearable devices, smart skin sensors, and damping materials. © 2019 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2019 , 57, 713–721     

敏化光波长对(Fe,Ni):LiNbO3晶体全息记录性能的影响

分别采用514 nm绿光、488 nm蓝光和390 nm紫外光作为敏化光,633 nm红光作为记录光,详细研究了敏化光波长对氧化(Fe,Ni):LiNbO3晶体全息记录性能的影响.结果表明:随着敏化光波长的逐渐减小,氧化(Fe,Ni):LiNbO3晶体的非挥发全息记录性能逐渐优化,390 nm紫外光是这三种敏化光中最优的敏化光.考虑敏化光的吸收,为了在双中心全息记录中获得最优的性能,应当选择合适波长的敏化光:一方面短波长敏化光能有效地敏化深中心;另一方面短波长敏化光的吸收太强(如对光折变效应无用的基质吸收),不能沿厚度方向有效地敏化晶体,所以实际上需折衷考虑,并从理论上给予了解释.     

A nanoscale field effect data storage of bipolar endo-fullerenes shuttle device

We investigated the internal dynamics of an electro-fluid shuttle memory element, consisting of K⁺@C₆₀ and F⁻@C₆₀ encapsulated in a C₆₄₀ nanocapsule. Energetics and operating responses of bipolar endo-fullerenes shuttle memory device, (K⁺@C₆₀–F⁻@C₆₀)@C₆₄₀, were examined by classical molecular dynamics simulations under the external force fields.     

基于聚合物添加剂谱库的缓冲盐中塑料药品包装材料难挥发可溶出物的快速分析方法研究

采用超高效液相色谱-四极杆飞行时间质谱(UPLC-QTOF-MS),结合基于UNIFI软件建立的174种聚合物添加剂的谱库,实现了塑料药品包装材料中难挥发可溶出物(Extractables)的快速筛查和准确定量。样品经氯仿萃取后,以甲醇和0.1%甲酸水溶液为流动相在CORTECS C18(2.1 mm×100 mm,1.6μm)色谱柱上进行分离,在质谱电喷雾正离子模式下,UPLC-QTOF-MS进行筛查和定量分析。结果表明,浸泡60 d缓冲盐(25℃)中检出4种物质,利用谱库筛查确定其中1种物质是邻苯二甲酸二异癸酯(DIDP),采用外标法定量,测得其溶出量为1.98μg/L;其余3种物质可通过精确质量数、MSE谱图等进行推断定性,利用结构与质量数相近的邻苯二甲酸二环己酯(DCHP)为内标进行定量,3种提取物的总含量为10.80μg/L。利用DIDP进行回收率实验,5,10,20μg/L 3个加标水平的回收率为90.1%~97.1%,相对标准偏差(RSD,n=6)不大于3.7%。该方法快速、准确、灵敏,适用于药品包装材料的安全性考察。     

采用紫外光提高双掺杂铌酸锂晶体中全息记录的灵敏度和光栅强度

提出了一种在双掺杂铌酸锂晶体中用调制的双紫外光进行非挥发全息记录的方法。与通常的用紫外光敏化的非挥发全息记录相比,这种方法可以大幅度地提高光栅强度和记录灵敏度。联立双中心物质方程和双光束耦合波方程,数值分析了光栅强度和衍射效率随时间的变化并讨论了掺杂浓度和记录光强对紫外光非挥发全息记录机制下光折变效应的影响。研究发现,紫外光记录得到的深浅中心的光栅具有相同的相位,总的光栅（深浅中心光栅的叠加）强度为两光栅强度之和,固定过程中深中心的光栅得到增强;增大深浅中心掺杂的浓度可以提高光栅强度,增大记录紫外光的光强可以增加光栅的强度和记录灵敏度。理论模拟可以证实并预测实验结果。     

OH~- absorption and nonvolatile holographic storage properties in Mg:Ru:Fe:LiNbO_3 crystal as a function of Mg concentration

Mg:Ru:Fe:LiNbO3 crystals with various concentrations of MgO (in mole) and fixed content of RuO2 and Fe2O3 (in mass) are grown with the Czochralski method from the congruent melt. Their infrared transmission spectra are measured and discussed to investigate the defect structure. With the increase of Mg2+ concentration the blue nonvolatile holographic storage capability is enhanced. The nonvolatile holographic storage properties of dual-wavelength recording of Mg(7 mol%):Ru:Fe:LiNbO3 nonvolatile diffraction efficiency, response time, and nonvolatile sensitivity reach 59.8%, 70 s, and 1.04 cm/J, respectively. Comparing Mg(7 mol%):Ru:Fe:LiNbO3 with Ru:Fe:LiNbO3 crystal, the response time is shortened apparently. The nonvolatile diffraction efficiency and sensitivity are raised largely. The mechanism in blue photorefractive nonvolatile holographic storage is discussed.     

Tailoring and patterning of dielectric interfaces for the development of advanced organic field-effect transistors

The progress of organic field-effect transistors (OFETs) has led to the advent of a new area of printed and/or flexible electronics. In organic transistors and circuits, the interface between a gate insulator (GI) and an organic semiconductor (OS) plays a critical role on the electrical performance together with the functionality, the reliability and the long-term stability. In this review, we describe the basic principles of engineering a variety of the GI/OS interfaces for the development of advanced OFETs from the framework of the surface morphology and the physico-chemical surface interactions. We also discuss the dielectric interface modification and the resultant device performance of the OFETs.     

128dB数控衰减器的设计

根据ＥｌｅｃｔｒｉｃＥｒａｓａｂｌｅＰｏｔ（Ｅ２ＰＯＴ）电位器的电气参数和数字逻辑电路设计原理,设计和制作了一种可用数码控制的衰减器,该衰减器操作方便,而且可准确定位,掉电后可以保持原来的状态信息,并可提供衰减量的数字显示．     

Modeling of Nonvolatile Quantum Dot Gate Structures Operating at Millimeter Wave Frequencies for Memory Applications

This paper models electrical characteristics of quantum dot nonvolatile memory cells during READ and WRITE operations. Capacitance-voltage characteristics are calculated by self-consistently solving the Schrodinger and Poisson equations. The memory access time for a 32 kb NOR array is 73 ps, which reduces to 13 ps in lightly-doped sheath (LDS) structures. The results show that a change in the quantum dot charge has a strong effect on drain to source current. The calculated cutoff frequency f _T is 135 GHz for a 0.1 m channel length Si field-effect memory structures. The application of a quantum dot memory cell as a programmable resistor in RF circuits is presented. By changing the quantum dot charge, the resistor values can be changed by 25%.