Precise Synthesis and Thin Film Self-Assembly of PLLA-b-PS Bottlebrush Block Copolymers

The ability of bottlebrush block copolymers (BBCPs) to self-assemble into ordered large periodic structures could greatly expand the scope of photonic and membrane technologies. In this paper, we describe a two-step synthesis of poly(l-lactide)-b-polystyrene (PLLA-b-PS) BBCPs and their rapid thin-film self-assembly. PLLA chains were grown from exo-5-norbornene-2-methanol via ring-opening polymerization (ROP) of l-lactide to produce norbornene-terminated PLLA. Norbonene-terminated PS was prepared using anionic polymerization followed by a termination reaction with exo-5-norbornene-2-carbonyl chloride. PLLA-b-PS BBCPs were prepared from these two norbornenyl macromonomers by a one-pot sequential ring opening metathesis polymerization (ROMP). PLLA-b-PS BBCPs thin-films exhibited cylindrical and lamellar morphologies depending on the relative block volume fractions, with domain sizes of 46–58 nm and periodicities of 70–102 nm. Additionally, nanoporous templates were produced by the selective etching of PLLA blocks from ordered structures. The findings described in this work provide further insight into the controlled synthesis of BBCPs leading to various possible morphologies for applications requiring large periodicities. Moreover, the rapid thin film patterning strategy demonstrated (>5 min) highlights the advantages of using PLLA-b-PS BBCP materials beyond their linear BCP analogues in terms of both dimensions achievable and reduced processing time.     

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser reflectometry. High resolution X-ray diffraction (HRXRD) revealed that optimized monocrystalline GaN was obtained for a 40 nm AlN grown at 1080 °C. This is in good agreement with the results of morphological study by scanning electron microscopy (SEM) and also confirmed by atomic force microscopy (AFM) observations. The best morphology of AlN with columnar structure and lower rms surface roughness is greatly advantageous to the coalescence of the GaN epilayer. Symmetric and asymmetric GaN reflections were combined for twist and stress measurements in monocrystalline GaN. It was found that mosaicity and biaxial tensile stress are still high in 1.7 μm GaN. Curvature radius measurement was also done and correlated to the cracks observations over the GaN surface.     

Structure and mechanical properties of Al/AlN multilayer with different AlN layer thickness

Nanometer scale Al/AlN multilayers have been prepared by dc magnetron sputtering technique with a columnar target. A set of Al/AlN multilayers with the Al layer thickness of 2.9 nm and the AlN layer thickness variation from 1.13 to 6.81 nm were determined. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the coatings was investigated with grazing angle XRD (GAXRD). Mechanical properties of these multilayers were thoroughly studied using a nanoindentation and ball-on-disk micro-tribometer. It was found that the multilayer hardness and reduced modulus showed no strong dependence on the AlN layer thickness. Al2.9 nm/AlN1.13 nm multilayer had more excellent tribological properties than single layers and other proportion multilayers with a lowest friction coefficient of 0.15. And the tribological properties of all the multilayers are superior to the AlN single layer.     

Study of the structural and optical properties of GaN/AlN quantum dot superlattices

We study GaN/AlN Quantum Dot (QD) superlattices utilizing the STREL environment which allows the building of atomistic models, relaxation of the structures, the calculation of the electronic states and optical transitions and the visualization of the results. The forces are calculated using an appropriate Keating or Stillinger–Weber interatomic potential model and the electronic states and optical transitions using a tight-binding formulation which is economical and produces realistic electronic properties. The relaxed structure has strains mainly in the GaN region which are compressive and small tensile strains in the AlN region, mainly below the QD. In the calculation of the electronic states and of the optical transitions the strains are included realistically at the atomistic level. The study of the wavefunctions close to the fundamental gap show how these strains influence the form and spatial extent of the wavefunction. Very close to the fundamental gap the valence and some conduction states are confined in the QD and have considerable oscillator strength.     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。     

Sulfur Concentration in Nanoporous Alumina Membrane

Nanoporous alumina membrane prepared by anodic oxidation using sulfuric acid electrolyte was subjected to TG-DTA and X-ray Photoelectron Spectroscopy (XPS or ESCA) to further study the distribution of sulfur. In XPS study, Ar⁺ ion bombardment was performed on the sample to etch the surface at a rate of 3 nm min^-1. As a result, sulfur was found to be concentrated within a depth of 3nm from the surface. The S content of the surface was found to be 2.7±0.5 wt%, and that at a depth of ca. 3 nm and ca. 10 nm was found to be as low as about 0.6±0.11 wt% (5.37±1.0 wt%→ 1.26±0.2wt% SO₂). In TG-DTA, the mass loss of 7.3% was in fair agreement with that calculated on XPS results (7.1±1.2%). This revised version was published online in July 2006 with corrections to the Cover Date.     

硫化物/Ru(II)络合物复合敏化TiO2纳米多孔膜

用光电化学方法研究了ＣｄＳ,ＰｄＳ和Ｒ１１Ｌ２（ＮＣＳ）２,（Ｌ＝２,２′－ｂｉｐｙｄｉｎｅ－４,４′－ｄｉｃａｒｂｏｘｙｌｉｃａｃｉｄ）复合敏化ＴｉＯ２纳米晶电极的光电化学行为,结果表明,采用复合敏化比用Ｒ１１（ＩＩ）络合物单独敏化ＴｉＯ２纳米晶电极效果好,大大提高了光电转换效率,主要原因是采用复合敏化,可防止ＴｉＯ２导带上由光注入产生的电子的反向转移,避免了电子的损失。     

A novel and efficient route to diarylmethanes catalyzed by nickel(II) ion on nanoporous carbon

Much improved catalytic carbon-carbon bond-forming reactions between aryl chlorides and Grignard reagents has been achieved using nickel(II) ion on nanoporous carbon.     

First principle calculations study of AlN surface terminal structure evolution under different conditions

The surface structure and properties of aluminum nitride (AlN) play an important role in many applications. Using the first principle calculations method, we analyzed the surface terminal structure of AlN and its evolution under different conditions by determining the surface energy, adsorption energy, and evaporation energy of the Al and N terminals on the AlN(0001) surface. Our results show that the reason why the N terminal is less stable than the Al terminal is not only because of its high surface energy but also because its adsorption performance is extremely sensitive to the adsorption position. The surface N atoms combine to form N₂ molecules that escape during the evaporation process at high temperature. After surface N atoms escape, the AlN surface structure reconstitutes to form a hexagonal closest packing (HCP)–like structure, and the energy barrier for the reconstructing process is 3.2 eV. This shows that the structure and form of the AlN(0001) terminals depend on the environmental conditions.     

Efficient production of nanoporous silicon carbide from rice husk at relatively low temperature

Nanoporous silicon carbide with a specific surface area of up to 186.45 m² g⁻¹ has been efficiently synthesized from waste rice husk using a magnesiothermic reduction at 950 °C as a key step. Throughout the entire process, the recovery rates of silicon, potassium and phosphorus from rice husk can reach 88.46, 91.5 and 65.5%, respectively. Turning rice husk waste into a real treasure, this promising method for producing porous SiC protects the environment and brings economic benefits.