Metal–Organic Frameworks–Based Memristors: Materials,Devices, and Applications

Facing the explosive growth of data, a number of new micro-nano devices with simple structure, low power consumption, and size scalability have emerged in recent years, such as neuromorphic computing based on memristor. The selection of resistive switching layer materials is extremely important for fabricating of high performance memristors. As an organic-inorganic hybrid material, metal-organic frameworks (MOFs) have the advantages of both inorganic and organic materials, which makes the memristors using it as a resistive switching layer show the characteristics of fast erasing speed, outstanding cycling stability, conspicuous mechanical flexibility, good biocompatibility, etc. Herein, the recent advances of MOFs-based memristors in materials, devices, and applications are summarized, especially the potential applications of MOFs-based memristors in data storage and neuromorphic computing. There also are discussions and analyses of the challenges of the current research to provide valuable insights for the development of MOFs-based memristors.     

Transient transition behaviors of fractional-order simplest chaotic circuit with bi-stable locally-active memristor and its ARM-based implementation

This paper proposes a fractional-order simplest chaotic system using a bi-stable locally-active memristor. The characteristics of the memristor and transient transition behaviors of the proposed system are analyzed, and this circuit is implemented digitally using ARM-based MCU. Firstly, the mathematical model of the memristor is designed, which is nonvolatile, locally-active and bi-stable. Secondly, the asymptotical stability of the fractional-order memristive chaotic system is investigated and some sufficient conditions of the stability are obtained. Thirdly, complex dynamics of the novel system are analyzed using phase diagram, Lyapunov exponential spectrum, bifurcation diagram, basin of attractor, and coexisting bifurcation, coexisting attractors are observed. All of these results indicate that this simple system contains the abundant dynamic characteristics. Moreover, transient transition behaviors of the system are analyzed, and it is found that the behaviors of transient chaotic and transient period transition alternately occur. Finally, the hardware implementation of the fractional-order bi-stable locally-active memristive chaotic system using ARM-based STM32F750 is carried out to verify the numerical simulation results.     

无机固体材料中的忆阻效应

缺陷调控是固体化学中的基本问题,也是决定材料性能的核心要素。基于缺陷调控的忆阻效应将给未来电子信息领域带来全新的变革。本文综述了无机固体材料中忆阻效应的研究进展,主要总结了忆阻效应的产生机制和忆阻材料的类型,结合原子级p-n结的相关工作,提出深入明确电场下缺陷迁移机制将是从无机固体化学角度研究忆阻效应的重要方向。     

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10⁻⁴ Torr to 3 × 10⁻² Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 10¹⁷ cm⁻³ to (42.64 ± 4.46) × 10¹⁷ cm⁻³, electron mobility from 0.25 ± 0.03 cm²/(V·s) to 7.12 ± 1.32 cm²/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 10⁶ Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 10³ Ω, and the ratio R_HRS/R_LRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.     

A memristor oscillator based on a twin-T network

A novel inductance-free nonlinear oscillator circuit with a single bifurcation parameter is presented in this paper. This circuit is composed of a twin-T oscillator, a passive RC network, and a flux-controlled memristor. With an increase in the control parameter, the circuit exhibits complicated chaotic behaviors from double periodicity. The dynamic properties of the circuit are demonstrated by means of equilibrium stability, Lyapunov exponent spectra, and bifurcation diagrams. In order to confirm the occurrence of chaotic behavior in the circuit, an analog realization of the piecewise-linear flux-controlled memristor is proposed, and Pspice simulation is conducted on the resulting circuit.     

温度改变对钛氧化物忆阻器导电特性的影响

相同测试条件下,纳米钛氧化物忆阻器的导电过程存在不稳定性,制约了对器件瞬态阻抗的精确读取与控制,并影响了器件应用于电路设计的可靠性与稳定性.杂质漂移与隧道势垒的共存是导致上述不稳定性的可能因素,且杂质漂移特性与环境温度密切相关.然而,目前尚无通过控制温度提高忆阻器导电稳定性的具体研究.基于杂质漂移与隧道势垒共存,本文分析了温度与忆阻器导电特性的关联,研究了器件活跃区域厚度及初始掺杂层厚度的改变对临界温度的影响,利用SPICE软件进行了仿真验证并给出结果,得出提高忆阻器导电稳定性的方法有:增大活跃区域厚度、降低初始杂质浓度及保持环境温度稳定且低于临界温度,从而为制备性能稳定的忆阻器及推动器件在实际电路中的应用提供依据.     

离子迁移忆阻混沌电路及其在语音保密通信中的应用

忆阻器是一种具有记忆功能和纳米级尺寸的非线性元件, 作为混沌系统的非线性部分, 能够使系统的物理尺寸大大减小, 同时可以得到各种丰富的非线性曲线, 提高混沌系统的复杂度和信号的随机性. 因此, 本文采用离子迁移忆阻器的磁控模型设计了一个新的混沌系统. 通过理论推导、数值仿真、Lyapunov指数谱、分岔图和Poincaré截面图研究了系统的基本动力学特性, 并分析了改变不同参数时系统动力学行为的变化. 同时, 建立了模拟该系统的SPICE电路, SPICE仿真结果与数值分析相符, 从而验证该混沌系统的混沌产生能力. 最后, 利用线性反馈同步控制方法实现了新构造的离子迁移忆阻混沌系统的同步, 并且采用该同步方法有效实现了语音信号的保密通信. 数值仿真证实了新混沌系统的存在性以及同步控制应用的可行性.     

基于二维材料MXene的仿神经突触忆阻器的制备和长/短时程突触可塑性的实现

兼具长时程可塑性与短时程可塑性的电子突触被认为是类脑计算系统的重要基础.将一种新型二维材料MXene应用到忆阻器中,制备了基于Cu/MXene/SiO_2/W的仿神经突触忆阻器.结果表明, Cu/MXene/SiO_2/W忆阻器成功实现了稳定的双极性模拟阻态切换,同时成功模拟了生物突触短时程可塑性的双脉冲易化功能和长时程可塑性的长期增强/抑制行为,其中双脉冲易化的易化指数与脉冲间隔时间相关. Cu/MXene/SiO_2/W忆阻器的突触仿生特性,归功于MXene辅助的Cu离子电导丝形成与破灭的类突触响应机理.由于Cu/MXene/SiO_2/W忆阻器兼具长时程可塑性与短时程可塑性,其在突触仿生电子学和类脑智能领域将会具有巨大的应用前景.     

Modeling and dynamics of double Hindmarsh-Rose neuron with memristor-based magnetic coupling and time delay

The firing of a neuron model is mainly affected by the following factors:the magnetic field, external forcing current, time delay, etc. In this paper, a new time-delayed electromagnetic field coupled dual Hindmarsh-Rose neuron network model is constructed. A magnetically controlled threshold memristor is improved to represent the self-connected and the coupled magnetic fields triggered by the dynamic change of neuronal membrane potential for the adjacent neurons. Numerical simulation confirms that the coupled magnetic field can activate resting neurons to generate rich firing patterns, such as spiking firings, bursting firings, and chaotic firings, and enable neurons to generate larger firing amplitudes. The study also found that the strength of magnetic coupling in the neural network also affects the number of peaks in the discharge of bursting firing. Based on the existing medical treatment background of mental illness, the effects of time lag in the coupling process against neuron firing are studied. The results confirm that the neurons can respond well to external stimuli and coupled magnetic field with appropriate time delay, and keep periodic firing under a wide range of external forcing current.     

High throughput N-modular redundancy for error correction design of memristive stateful logic

Memristive stateful logic is one of the most promising candidates to implement an in-memory computing system that computes within the storage unit. It can eliminate the costs for the data movement in the traditional von Neumann system. However, the instability in the memristors is inevitable due to the limitation of the current fabrication technology, which incurs a great challenge for the reliability of the memristive stateful logic. In this paper, the implication of device instability on the reliability of the logic event is simulated. The mathematical relationship between logic reliability and redundancy has been deduced. By combining the mathematical relationship with the vector-matrix multiplication in a memristive crossbar array, the logic error correction scheme with high throughput has been proposed. Moreover, a universal design paradigm has been put forward for complex logic. And the circuit schematic and the flow of the scheme have been raised. Finally, a 1-bit full adder (FA) based on the NOR logic and NOT logic is simulated and the mathematical evaluation is performed. It demonstrates the scheme can improve the reliability of the logic significantly. And compared with other four error corrections, the scheme which can be suitable for all kinds of R-R logics and V-R logics has the best universality and throughput. Compared with the other two approaches which also need additional complementary metal-oxide semiconductor (CMOS) circuits, it needs fewer transistors and cycles for the error correction.