匹配问题实例空间和解空间结构

本文通过研究匹配问题的实例空间，匈牙利算法和解空间三者之间的关系，指出S实例空间的数目与问题复杂度之间的关系既不是充分也不是必要的，而如何对问题的解空间进行合理的分解才能是问题的关键。     

Chalcogenide based all-solid-state thin electroplated ion-selective membrane for Hg(II) flow-injection determinations

The response to Hg(II) of a thin all-solid-state Te-doped silver chalcogenide membrane, described by the general formula Ag₂ + δSe_{1 − x}Te_x, which has been electrochemically prepared following a previously proposed approach, has been investigated. The kinetics of formation of the membrane's secondary dynamic response to Hg(II) has been successfully combined with the precise timing and transient signal, typical for flow-injection (FI) measurements, in developing a sensitive and reliable mercury FI detector. Under optimized stream conditions it exhibits a linear Nernstian response, with a double slope of the calibration graph of 59 mV dec⁻¹, over the mercury(II) concentration range 10⁻⁶ − 10⁻³ M, the typical sample throughput amounting to about 70 samples per hour. The observed chemical amplification of the signal is due to the specificity of the processes dominating the initial step in formation of the steady-state signal of the membrane to mercury. The analytical performance of the Hg(II) FI detector, as regards sensitivity, reproducibility, selectivity and long-term stability has been thoroughly investigated. The exact procedure for membrane electrodeposition is given and the potential of the proposed approach as a cost-effective way for preparing chalcogenides of unique structure and properties has been outlined in the above context.     

Flow-injection determination of 3-hdroxybutyrate in serum with an immobilized 3-hydroxybutyrate dehydrogenase reactor and chemiluminescence detection

A flow-injection system for the determination of 3-hydroxybutyrate in serum is described. 3-Hydroxybutyrate dehydrogenase is immobilized on poly(vinyl alcohol) beads and incorporated in a flow-injection system. 1-Methoxy-5-methylphenazinium methylsulphate reacts with enzymatically generated NADH to give H₂O₂, which is detected chemiluminometrically with the reaction of luminol and hexacynoferrate(III). Serum is diluted and filtered through an ultrafiltration membrane. The system responds linearly to injected samples (80 μl) in the concentration range 0.5–300 μM; the detection limit is 0.1 μM. The within-day relative standard deviation (n = 90) for 58 μM 3-hydroxybutyrate in serum is 0.8%. The maximum throughout is 20 samples per hour. The immobilized enzyme is stable for at least 1 month.     

Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

基片温度对坡莫合金薄膜结构和磁电阻的影响

用磁控溅射方法制备了系列坡莫合金Ni80Fe20薄膜。利用X射线衍射、扫描电子显微镜和原子力显徽镜分析了薄膜的结构、晶粒取向、薄膜厚度、截面结构和表面形态。用4点探测技术测量了薄膜的电阻和磁电阻。结果表明：随衬底温度的升高，晶粒明显长大。膜内的缺陷和应力显著减小，而且增强了薄膜晶粒的[111]择优取向。结果表明，薄膜电阻率显著减小，而磁电阻显著增大。     

Structure and mechanical properties of Al/AlN multilayer with different AlN layer thickness

Nanometer scale Al/AlN multilayers have been prepared by dc magnetron sputtering technique with a columnar target. A set of Al/AlN multilayers with the Al layer thickness of 2.9 nm and the AlN layer thickness variation from 1.13 to 6.81 nm were determined. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the coatings was investigated with grazing angle XRD (GAXRD). Mechanical properties of these multilayers were thoroughly studied using a nanoindentation and ball-on-disk micro-tribometer. It was found that the multilayer hardness and reduced modulus showed no strong dependence on the AlN layer thickness. Al2.9 nm/AlN1.13 nm multilayer had more excellent tribological properties than single layers and other proportion multilayers with a lowest friction coefficient of 0.15. And the tribological properties of all the multilayers are superior to the AlN single layer.     

p型未掺杂富锌ZnO薄膜的形成和性能研究

以高纯ZnO为靶材,氩气为溅射气体,利用射频磁控溅射技术在石英衬底上生长出纤锌矿结构的富锌ZnO薄膜.薄膜沿(002)择优取向生长,厚约为1.2μm,呈现电绝缘特性.将溅射的ZnO薄膜在10-3Pa,510~1 000 K的温度范围等温退火1 h,室温Hall测量结果表明ZnO薄膜的导电性能经历了由绝缘—n型—p型—n型半导体的变化.XPS测试表明ZnO薄膜的Zn/O离子比随退火温度的升高而降低,但一直是富锌ZnO,说明未掺杂的富锌ZnO也可以形成p型导电.p型未掺杂富锌ZnO薄膜的形成可归因于VZn受主浓度可以克服VO和Zni本征施主的补偿效应.     

射频磁控溅射法制备薄膜电池电极的计算机模拟初步

计算机模拟仿真射频磁控溅射实验制备薄膜及离于电池电极,研究了在特定实验条件下薄膜的生长过程,并分析了影响薄膜生长的部分因素。     

Effects of UV photon irradiation on SiOx (0 < x < 2) structural properties

Thin films of a-SiO_x (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O₂ gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiO_x thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiO_x phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO₂ material (only Si⁴⁺) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.     

Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions

The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τ_s becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors.