Design of broadband achromatic metasurface device based on phase-change material Ge2Sb2Te5

Based on the phase-change material Ge₂Sb₂Te₅ (GST), achromatic metasurface optical device in the longer-infrared wavelength is designed. With the combination of the linear phase gradient GST nanopillar and the adjustment of the crystalline fraction m value of GST, the polarization insensitive achromic metalenses and beam deflector metasurface within the longer-infrared wavelength 9.5 μm to 13 μm are realized. The design results show that the achromatic metalenses can be focused on the same focal plane within the working waveband. The simulation calculation results show that the full-width at half-maximum (FWHM) of the focusing spot reaches the diffraction limit at each wavelength. In addition, the same method is also used to design a broadband achromatic beam deflector metasurface with the same deflection angle of 19°. The method proposed in this article not only provides new ideas for the design of achromatic metasurfaces, but also provides new possibilities for the integration of optical imaging, optical coding and other related optical systems.     

Excited-State Dynamics of Non-Luminescent and Luminescent π-Radicals

Recently, the potential use of organic π-radicals and related spin systems has been expanded to modern technological applications. The unique excited-state dynamics of organic π-radicals can be useful to improve the stability of photochemically unstable organic compounds, make the polarization transfer applicable to information technology, and achieve effective up-conversion of interest for luminescence bioimaging, among others. Furthermore, highly luminescent stable π-radicals have been recently reported, which are especially interesting for application in organic light-emitting devices owing to their potential to provide an internal quantum efficiency of 100 %. Thus, the excited-state nature of stable π-radicals as well as the control of their excited-state spin dynamics are emerging topics both in terms of fundamental science and related technological applications. In this minireview, we focus on the excited-state dynamics of both photostable non(weakly)-luminescent and luminescent π-radicals, which are opposites of each other. In particular, we cover the following topics: 1) effective generation of high-spin photoexcited states and control of the excited-state dynamics by using non-luminescent π-radicals, 2) unique excited-state dynamics of luminescent π-radicals and radical excimers, and 3) applications utilizing excited-state dynamics of π-radicals.     

用于白光LED的高亮度蓝白色荧光粉Ca2SiO3Cl2：Eu2+的发光性质

采用固相法在较低温度下合成了Eu²⁺激活的Ca₂SiO₃Cl₂高亮度蓝白色发光材料,并对其发光性质进行了研究。其发射光谱由两个谱带组成,峰值分别位于420,498nm处,归结为Ca₂SiO₃Cl₂晶体中占据两种不同Ca²⁺格位的Eu²⁺离子的5d→4f跃迁发射。改变Eu²⁺浓度,可以使样品的发光在蓝白色和绿白色之间变化。当Eu²⁺浓度为0.005mol^-1时,样品呈现很亮的蓝白色发光。两个发射峰的激发光谱均分布在250~410nm的波长范围内,峰值分别位于333,369nm处。Ca₂SiO₃Cl₂:Eu²⁺可被InGaN管芯产生的近紫外辐射有效激发,是一种性能良好的白光LED用单一基质蓝白色荧光粉。     

计算机辅助电子线路实验的思考与探索

本文介绍了EltctronicWorkbench软件和计算机虚拟仪器系统，采用计算机模拟仿真技术对电子线路实验加以辅助设计和探索。     

Multimode optical fiber demultiplexer-star coupler using a single gradient-index-rod lens and a multi-facet grating

An optical fiber multi-function device consisting of a single gradient-index-rod lens and a multi-facet blazed reflection grating is proposed to simultaneously realize functions of wavelength demultiplexing and optical signal distribution in a multimode optical fiber transmission system. We analyzed the demultiplexing characteristics and the tolerance of optical components using the ray trace method. This device can realize not only low loss optical signal distribution but also offers improved demultiplexing characteristics in comparison with the previously proposed demultiplexer-multiposition switch. The following characteristics are expected from the design using commercially available optical components: a working band of 0.64–0.88 μm, channel separation of 34–36 nm, 3 dB bandwidth of 27–28 nm, channel cross-talk of less than - 40 dB and minimum excess insertion loss of 0.9–2.1 dB.     

高斯光束计算平板波导自由传输区远场分布及其修正

对近轴近似条件下求解亥姆霍兹方程得到的高斯光束显式传播公式做了分析，同时，基于基尔霍夫衍射理论，在菲涅耳近似的条件下给出了相应的高斯光束在远场的传播公式，在此基础上，对近轴近似条件做出了定量分析，给出了这个近似条件引入的误差，提出了一种计算高斯光束远场分布的修正方法，并采用有限差分-光束传播方法(FD-BPM)来检验各种方法的准确性。把这种修正方法应用到平面光集成波导器件，如阵列波导光栅(AWG)、蚀刻衍射光栅(EDG)等器件的设计和模拟中，可以大大降低工作的复杂性，同时可以得到精确的结果。     

电子储存环中插入元件的非线性束流动力学的Lie代数方法

介绍了用能保证哈密顿系统“辛”性质的Lie映射方法来研究电子储存环中的插入元件对束流动力学的影响.并以此方法对合肥光源中将要安装的波荡器UD?–?1对储存环的影响作了初步的研究     

线性电压扫描下1VIIS器件瞬态的简单模型

本文用准平衡模型分析讨论了线性电压扫描下MIS器件的I/V瞬态.文中除了给出一般的处理方法以外，还给出了几种不同电压扫描率下I/Y特性的计算结果，并与已往的模型作了比较.     

绿色荧光粉YAGG∶Tb,Gd用于FED的尝试

FED器件的发展迫切需要具有化学和热稳定性 ,高亮度 ,长寿命的新型荧光材料。本文合成了Gd3 +离子共掺杂的YAGG∶Tb获得了YAGG∶Tb ,Gd ,并将其用于 0～ 30 0 0V低压范围 ,对其在不同电压和电流密度下的发光特性进行了测试。结果表明 ,该种材料特性优于ZnO∶Zn并且不存在电压与电流饱和     

磁电子学器件应用原理

本文介绍几种重要的磁电子器件的基本结构和工作原理,包括巨磁电阻与隧穿磁电阻传感器、巨磁电阻隔离器、巨磁电阻与隧穿磁电阻硬盘读出磁头、磁电阻随机存取存储器、自旋转移磁化反转与微波振荡器。自旋晶体管作为未来磁电子学或自旋电子学时代的基本元素,目前大都还处在概念型阶段,本文也将对几种自旋晶体管的大致原理作简要介绍。