Curved Ferroelectric Liquid Crystal Matrix Displays Driven by Field-Sequential-Color and Active-Matrix Techniques

This paper describes a curved field-sequential-color matrix display using fast-response ferroelectric liquid crystal. Black matrix and transparent electrode patterns were formed on a thin plastic substrate by a transfer method from a glass substrate. While a composite film of liquid crystal and micro-polymers of walls and fibers was formed between the flexible substrates by printing, laminating and curing processes of a solution of monomers and liquid crystal, the mechanical stability was enhanced by use of multi-functional monomers to form large display panels. The image pixels of the matrix panel were driven by an active matrix scheme using an external switch transistor array at a frequency of 180 Hz for intermittent three-primary-color backlight illumination. The flexible A4-paper-sized color display with 24 × 16 pixels and 60 Hz field frequency was demonstrated by illuminating it with sequential three-primary-color lights from light-emitting diodes of the backlight. Our display system is useful in various information displays because of its freedom of setting and location.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

Ba(Zr0.3Ti0.7)O3 铁电薄膜的制备

介绍了用溶胶-凝胶法(sol-gel)在Pt/Ti/SiO2/Si衬底和石英衬底上制备Ba(Zr0.3Ti0.7)O3铁电薄膜的基本原理、工艺过程及工艺特点;Sol-gel制备的Ba(Zr0.3Ti0.7)O3铁电薄膜表面平整、厚度均匀.     

Electron-confined LO-phonon scattering in GaAs-Al0.45Ga0.55As superlattice

We develop a theoretical model to the scattering time due to the electron-confined LO-phonon in GaAs-Al_xGa_1-xAs superlattice taking into account the sub-band parabolicity. Using the new analytic wave function of electron miniband conduction of superlattice and a reformulation slab model for the confined LO-phonon modes, an expression for the electron-confined LO-phonon scattering time is obtained. In solving numerically a partial differential equation for the phonon generation rate, our results show that forx = 0.45, the LO-phonon in superlattice changes from a bulk-like propagating mode to a confined mode. The dispersion of the relaxation time due to the emission of confined LO-phonons depends strongly on the total energy.     

Surface rumpling of cubic CaTiO3 from density functional theory

In this paper, the structure of cubic CaTiO3 （001） surfaces with CaO and TiO2 terminations has been studied from density functional calculations. It has been found that the Ca atom has the largest relaxation for both kinds of terminations, and the rumpling of the CaO-terminated surface is much larger than that of TiO2-terminated surface. Also we have found that the metal atom relaxes much more prominently than the O atom does in each layer. The CaO-terminated surface is slightly more energetically favourahle than the TiO2-terminated surface from the analysis of the calculated surface energy.     

Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films

A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.     

Laser Annealing of Thin-Film Ferroelectric Heterostructures

Preliminary experiments on laser annealing of ferroelectric samples by ultraviolet radiation of a KrF laser are carried out. In principle, laser annealing allows one to reduce appreciably the duration of thermal action, minimize the size of the samples treated, and control the crystallization processes in the samples. A special focussing system was employed to provide homogeneous irradiation of the spot with dimensions of ~1×1 cm² within a broad energy range from 0.1 to 10~J per pulse. The range of energy densities leading to phase transitions in thin films is determined.     

Photo-induced effect in the layered perovskite manganite La<Subscript>1.2</Subscript>Sr<Subscript>1.8</Subscript>Mn<Subscript>1.8</Subscript>Co<Subscript>0.2</Subscript>O<Subscript>7</Subscript>

It is helpful to study the photo-induced effect in the perovskite manganites not only for elucidating the mechanism of colossal magnetoresistance (CMR) effect but also for potential applications in technology. The laser-induced effect in the Co doping layered perovskite manganites La_1.2Sr_1.8Mn_1.8Co_0.2O₇, is studied in this paper and the obtained results are also compared with that gained in the Nd-doping manganites with cubic perovskite structure.     

后退火温度对溅射沉积Pb(Zr0.52Ti0.48)O3铁电薄膜结构和性能的影响

在具有Ti缓冲层的Pt(111)底电极上,用射频溅射工艺在较低的衬底温度(370℃)和纯Ar气氛中沉积Pb(Zr0.52Ti0.48)O3(PZT)薄膜,沉积过程中基片架作15°摇摆以提高膜厚的均匀性。然后将样品在大气中进行5min快速热退火处理,退火温度550-680℃。用XRD、SEM分析薄膜的微结构,RT66A标准铁电测试系统测量样品的铁电和介电性能。结果表明,所沉积的Pt为(111)取向,仅当后退火温度高于580℃,沉积在Pt(111)上的PZT薄膜才能形成钙钛矿结构的铁电相,退火温度在580-600℃时结晶为(110)择优取向,退火温度高于600℃时结晶为(111)择优取向。PZT薄膜的极化强度随退火温度的升高而增加,但退火温度超过650℃时漏电流急剧上升,因此退火处理的温度对PZT薄膜的结构和性能有决定性的影响。     

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

The first fully operational mid-IR (3–5 μm) 256×256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detecor chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 595707 (2005).