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1.
Aiming at training the feed-forward threshold neural network consisting of nondifferentiable activation functions, the approach of noise injection forms a stochastic resonance based threshold network that can be optimized by various gradient-based optimizers. The introduction of injected noise extends the noise level into the parameter space of the designed threshold network, but leads to a highly non-convex optimization landscape of the loss function. Thus, the hyperparameter on-line learning procedure with respective to network weights and noise levels becomes of challenge. It is shown that the Adam optimizer, as an adaptive variant of stochastic gradient descent, manifests its superior learning ability in training the stochastic resonance based threshold network effectively. Experimental results demonstrate the significant improvement of performance of the designed threshold network trained by the Adam optimizer for function approximation and image classification. 相似文献
2.
Xinghua Li Yuqin Yang Junjie Miao Zhendong Yin Yijing Zhai Hongmei Shi Zengning Li 《Electrophoresis》2020,41(18-19):1584-1591
In the present research, field-amplified sample injection–CZE (FASI–CZE) coupled with a diode array detector was established to determine trace level sulfa antibiotic. Sulfathiazole, sulfadiazine, sulfamethazine, sulfadimethoxine, sulfamethoxazole, and sulfisoxazole were selected as analytes for the experiments. The background electrolyte solution consisted of 70.0 mmol/L borax and 60.0 mmol/L boric acid (including 10% methanol, pH 9.1). The plug was 2.5 mmol/L borax, which was injected into the capillary at a pressure of 0.5 psi for 5 s. Then the sample was injected into the capillary at an injection voltage of –10 kV for 20 s. The electrophoretic separation was carried out under a voltage of +19 kV. The capillary temperature was maintained at 20˚C throughout the analysis, and six sulfonamides were completely separated within 35 min. Compared with pressure injection-CZE, the sensitivity of FASI-CZE was increased by 6.25–10.0 times, and the LODs were reduced from 0.2–0.5 to 0.02–0.05 μg/mL. The method was applied to the determination of sulfonamides in river water and particulate matter samples. The recoveries were 78.59–106.59%. The intraday and interday precisions were 2.89–7.35% and 2.77–7.09%, respectively. This provides a simpler and faster method for the analysis of sulfa antibiotic residues in environmental samples. 相似文献
3.
聚山梨酯80又名吐温80,为一种亲水型非离子表面活性剂,是食品、保健品和药品中常用的辅料,作为增溶剂和澄清剂广泛用于中药注射剂。近年来,不良反应的发生使得聚山梨酯80的质量和应用愈加受到重视,有研究认为其加入可能引起注射剂不良反应增加。为避免超量使用,有必要对该辅料的投料加以严格控制。中药注射剂中聚山梨酯80的含量测定是当下研究的热点和难点,可以通过分光光度法、分子排阻-蒸发光散射检测法(SEC-ELSD)、液质联用法(LC-MS)直接测定,也可以水解后法经液相色谱-紫外检测法(HPLC-UV)或气相色谱法(GC)间接测定。但由于聚山梨酯80为聚氧乙烯聚合数目不同的混合物、不同厂家生产的聚山梨酯80化学组分及比例存在较大差异,难以采用统一的转换公式或对照品准确定量。此外,中药注射剂的复杂基质造成的假阳性干扰也对定量提出了挑战。为解决以上问题,以生脉注射液为例,提出基于吸收系数的中药注射剂中聚山梨酯80含量测定新方法。优化检测波长、显色剂种类、液液萃取过程振荡和静置时间,在6个不同品牌仪器上测得聚山梨酯80-硫氰酸钴配合物的吸收系数(E1%1 cm)为104.23,相对标准偏差(RSD)为2.08%。生脉注射液稀释10倍后,精密量取供试品溶液1.0 mL,精密加入硫氰酸钴溶液10 mL,二氯甲烷20 mL,涡旋振荡3 min。将混合液移至分液漏斗中,静置30 min,取下层二氯甲烷液,将前1 mL弃去,接收约15 mL,在320 nm处测定吸光度,再根据Lambert-Beer定律,利用获得的吸收系数计算得到聚山梨酯80的含量。方法阴性无干扰,精密度和重复性相对标准偏差均低于3%,平均回收率为98.42%。为进一步验证方法的准确性,分别采用吸收系数法和标准曲线法测定了2个厂家的10批生脉注射液,并与实际投料量比较。配对t检验结果表明,当置信度为95%时,两种方法无显著性差异,吸收系数法测得结果与企业生产中聚山梨酯的实际投料量也无显著性差异。研究采用前人未采用的、灵敏度更高的320 nm为检测波长,显著降低了基质干扰,克服了中药注射剂中聚山梨酯80测定结果与实际投料量难以吻合的问题。吸收系数法无需使用对照品,亦不用制备标准曲线,可为中药注射剂中聚山梨酯80的检查标准提供切实可行的解决方案。所建方法灵敏、准确、快速、简便,为含聚山梨酯80制剂的质量控制提供了关键常数及新的思路。 相似文献
4.
Kai Xu Zhenchang Tang Yan Zhang Wanshu Li Haiou Li Lihui Wang Liming Liu Honghang Wang Feng Chi Xiaowen Zhang 《Current Applied Physics》2019,19(10):1076-1081
Germanium dioxide (GeO2) aqueous solutions are facilely prepared and the corresponding anode buffer layers (ABLs) with solution process are demonstrated. Atomic force microscopy, X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements show that solution-processed GeO2 behaves superior film morphology and enhanced work function. Using GeO2 as ABL of organic light-emitting diodes (OLEDs), the visible device with tris(8-hydroxy-quinolinato)aluminium as emitter gives maximum luminous efficiency of 6.5 cd/A and power efficiency of 3.5 lm/W, the ultraviolet device with 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole as emitter exhibits short-wavelength emission with peak of 376 nm, full-width at half-maximum of 42 nm, maximum radiance of 3.36 mW/cm2 and external quantum efficiency of 1.5%. The performances are almost comparable to the counterparts with poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) as ABL. The current, impedance, phase and capacitance as a function of voltage characteristics elucidate that the GeO2 ABL formed from appropriate concentration of GeO2 aqueous solution favors hole injection enhancement and accordingly promoting device performance. 相似文献
5.
6.
The large deviation principle (LDP) which has been effectively used in queueing analysis is the sample path LDP, the LDP in a function space endowed with the uniform topology. Chang [5] has shown that in the discrete-time G/D/1 queueing system under the FIFO discipline, the departure process satisfies the sample path LDP if so does the arrival process. In this paper, we consider arrival processes satisfying the LDP in a space of measures endowed with the weak* topology (Lynch and Sethuraman [12]) which holds under a weaker condition. It is shown that in the queueing system mentioned above, the departure processes still satisfies the sample path LDP. Our result thus covers arrival processes which can be ruled out in the work of Chang [5]. The result is then applied to obtain the exponential decay rate of the queue length probability in an intree network as was obtained by Chang [5], who considered the arrival process satisfying the sample path LDP. 相似文献
7.
Let G=(V(G),E(G)) be a graph. A (n,G, λ)‐GD is a partition of the edges of λKn into subgraphs (G‐blocks), each of which is isomorphic to G. The (n,G,λ)‐GD is named as graph design for G or G‐decomposition. The large set of (n,G,λ)‐GD is denoted by (n,G,λ)‐LGD. In this work, we obtain the existence spectrum of (n,P3,λ)‐LGD. © 2002 Wiley Periodicals, Inc. J Combin Designs 10: 151–159, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/jcd.10008 相似文献
8.
Alexander Krasnosel'skii Dmitrii Rachinskii 《NoDEA : Nonlinear Differential Equations and Applications》2002,9(1):93-115
We consider autonomous systems with a nonlinear part depending on a parameter and study Hopf bifurcations at infinity. The
nonlinear part consists of the nonlinear functional term and the Prandtl--Ishlinskii hysteresis term. The linear part of the
system has a special form such that the close-loop system can be considered as a hysteresis perturbation of a quasilinear
Hamiltonian system. The Hamiltonian system has a continuum of arbitrarily large cycles for each value of the parameter. We
present sufficient conditions for the existence of bifurcation points for the non-Hamiltonian system with hysteresis. These
bifurcation points are determined by simple characteristics of the hysteresis nonlinearity. 相似文献
9.
通过分析计算,设计了一种大口径宽视场折射式红外相机光学系统。该系统设计用于超长线阵扫描红外相机的地面演示成像,它能同时对短波2μm—3μm、中波3μm—4.5μm双波段成像,且同时具有24°的大视场和150mm的宽口径,成像质量接近衍射极限。该系统在航天遥感领域应用广泛。 相似文献
10.
Giuseppe Coppola Andrea Irace Giovanni Breglio Mario Iodice Luigi Zeni Antonello Cutolo Pasqualina M. Sarro 《Optics and Lasers in Engineering》2003,39(3):317-332
In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices. 相似文献