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1.
F. El Akkad H. F. Ragaie M. Abdel Naby 《Applied Physics A: Materials Science & Processing》1989,48(5):493-495
Zn
x
Cd1–x
S thin films (0x0.20) were prepared using rf sputtering in argon atmosphere and characterized using X-ray diffraction, optical transmission, electrical resistivity and photoconductive decay measurements. The films were found to possess hexagonal structure. The crystallite size and degree of preferential orientation were found to decrease with the increase ofx and to improve upon annealing in vacuum at 250 °C. The transmission edge shifted towards shorter wavelengths with the increase ofx in agreement with the expected shift in the energy band gap. The films were found to exhibit room temperature resistivity in the range 100–1000 cm. The obtained values of long wavelength transmission (70–80%) and minority carrier diffusion length (30 m) are high enough for the application of these films in the field of solar cells. 相似文献
2.
We analyze the influence of surface heterogeneity, inducing a random ζ-potential at the walls in electroosmotic incompressible flows. Specifically, we focus on how surface heterogeneity modifies the physico-chemical processes (transport, chemical reaction, mixing) occurring in microchannel and microreactors. While the macroscopic short-time features associated with solute transport (e.g. chromatographic patterns) do not depend significantly on ζ-potential heterogeneity, spatial randomness in the surface ζ-potential modifies the spectral properties of the advection-diffusion operator, determining different long-term properties of transport/reaction phenomena compared to the homogeneous case. Examples of physical relevance (chromatography, infinitely fast reactions) are addressed. 相似文献
3.
Electron energy losses were measured as a function of the incidence angle of the primary electron beam for the Co/Cu(1 1 1) adsorption system. The measurements performed for the clean and covered substrate reveal characteristic intensity maxima associated with the close packed rows of atoms, as it was observed in the so called directional Auger and directional elastic peak electron spectroscopy profiles. The incidence angle dependent signal of electron energy losses measured for the clean (Cu 3p3/2) and covered (Co 3p3/2) substrate gives the so called directional electron energy loss spectroscopy (DEELS) profiles which contain structural as well as chemical information. The scattering of primaries and different emission processes associated with electron energy losses, Auger, and elastically backscattered electrons are discussed. A change in the hCu (Cu M2,3VV transition) Auger signal recorded during the continuous cobalt deposition shows that the growth mode is not a pure layer by layer type. The complete covering of the substrate by Co at higher coverages is confirmed by the comparison between experimental and theoretical ratios of the Auger peak heights. 相似文献
4.
In this work wüstite nanoparticles have been prepared via high-energy ball milling, using high-purity hematite (Fe2O3) and iron (Fe) powders as the starting materials. In order to get a single-phase wüstite different mole ratios of (Fe/Fe2O3) were milled, using a planetary mill. X-ray diffraction studies of the as-milled powders show that a single-phase wüstite was formed for a mole ratio of 0.6. Lattice parameter of the wüstite was obtained from XRD data, by which a value of 0.072 was obtained for x in Fe1−xO. A mean crystallite size of 13±1 nm was calculated for the single-phase wüstite, using Scherrer's formula. The morphology of the powders was also checked by TEM. Variations of pressure and temperature in the vial were recorded with respect to the milling time, using a GTM unit. Hysteresis loops of the as-milled powders at 5 K and room temperature have been obtained by SQUID and by VSM systems, respectively. The loops show non-zero coercivity, in contrast to the bulk wüstite. The observed magnetizations can be explained by a model based on the spinel-type defect clusters in non-stoichiometry wüstite. 相似文献
5.
P. Carlsson N.T. Son F. C. Beyer H. Pedersen J. Isoya N. Morishita T. Ohshima E. Janzén 《固体物理学:研究快报》2009,3(4):121-123
Deep levels introduced by low‐energy (200 keV) electron irradiation in n‐type 4H‐SiC epitaxial layers grown by chemical vapour deposition were studied by deep level transient spectroscopy (DLTS) and photoexcitation electron paramagnetic resonance (photo‐EPR). After irradiation, several DLTS levels, EH1, EH3, Z1/2, EH5 and EH6/7, often reported in irradiated 4H‐SiC, were observed. In irradiated freestanding films from the same wafer, the EPR signals of the carbon vacancy in the positive and negative charge states, VC+ and VC‐, respectively, can be observed simultaneously under illumination with light of certain photon energies. Comparing the ionization energies obtained from DLTS and photo‐EPR, we suggest that the EH6/7 (at ~EC – 1.6 eV) and EH5 (at ~EC – 1.0 eV) electron traps may be related to the single donor (+ | 0) and the double acceptor (1– | 2–) level of VC, respectively. Judging from the relative intensity of the DLTS signals, the EH6/7 level may also be contributed to by other unidentified defects. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
6.
We report the results of growth kinetics of oxidation process on niobium thin film surfaces exposed to air at room temperature by using a surface sensitive non-destructive X-ray reflectivity technique. The oxidation process follows a modified Cabrera-Mott model of thin films. We have shown that the oxide growth is limited by the internal field due to the contact potential which develops during the initial stage of oxidation. The calculated contact potential for 100 and 230 Å thick films is 0.81 ± 0.14 and 1.20 ± 0.11 V respectively. We report that 40% increase in the contact potential increases the growth rate for the first few mono layers of Nb2O5 from ∼2.18 to ∼2790 Å/s. The growth rates of oxidation on these samples become similar after the oxide thicknesses of ∼25 Å are reached. We report on the basis of our studies that a protective layer should be grown in situ to avoid oxidation of Nb thin film surface of Nb/Cu cavities. 相似文献
7.
In a previous publication we demonstrated a fast simulation tool for solution of electrophoretic focusing and separation. We here describe the novel mathematical model and numerical algorithms used to create this code. These include the representation of advection–diffusion equations on an adaptive grid, high-resolution discretization of the equations (sixth order compact), a new variational-based approach for controlling the motion of grid points, and new boundary conditions which enable solution in a moving frame of reference. We discuss the advantages of combining a high-resolution discretization with an adaptive grid in accurately resolving sharp interfaces in isotachophoresis, and provide verification against known analytical solutions and comparison with prevailing exiting numerical algorithms. 相似文献
8.
The very early stages of decomposition during room temperature storage, i.e. just a few minutes after quenching, are investigated by positron annihilation lifetime spectroscopy for both an AlMgSi alloy and an AlCuMg alloy. It turns out that by freezing the decomposition kinetics during measurements we can detect vacancy–solute atom pairs. The formation of larger solute clusters with structural vacancies is seen by an increase of the mean positron lifetime in the course of storage at room temperature (RT). Earlier findings concerning aging at RT were unable to discover this effect. The detected changes are interpreted in terms of cluster formation. Thus we show that positron annihilation spectroscopy (PAS) is one of the very few methods to access early stages of decomposition in metallic alloys. Moreover, the lower limit of the concentration of quenched‐in vacancy‐like defects is calculated to be at least 2 × 10–5 per atom. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
9.
K. SrinivasaRao B. Rajini Kanth P. K. Mukhopadhyay 《Applied Physics A: Materials Science & Processing》2009,96(4):985-990
Ultra-thin MoO3 films were deposited onto glass and Si substrates by r.f. magnetron sputtering. The optical and IR properties of the films
were studied in the range of 250 to 1000 nm and 400 to 1500 cm−1, respectively. The optical transmission spectra show a significant shift in absorption edge. The energy gap of the films
deposited at 373 K and 0.1 mbar was found to be 3.93 eV, and it decreases with increasing substrate temperature and decreasing
sputtering pressure. The IR transmittance spectra shows strong modes of vibrations of Mo=O and Mo–O–Mo units of MoO3 molecule. A significant change in energy gap and a shift in frequency of IR modes were observed in ultra-thin MoO3 films. 相似文献
10.
Qing Yang Sotaro Izumi Atsushi Tackeuchi Hirokazu Tatsuoka 《Applied Surface Science》2010,256(22):6928-6931
ZnO/ZnGa2O4 composite layers were synthesized by simple thermal oxidation of ZnS substrates with gallium in the air. The continuous-wave and time-resolved photoluminescence measurements for the composites were performed at room temperature. It is found that the visible deep level emission from ZnO in ZnO/ZnGa2O4 composite layer was almost suppressed. In addition, the UV emission with long lifetime was also observed in comparison with that of pure ZnO layer without ZnGa2O4. 相似文献