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Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects 总被引:1,自引:0,他引:1
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We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30μm-diameter silicon on insulator (Ge-on-SOI) PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SO1 substrate by the ultra-high vacuum chemical vapor deposition (UHV-CVD). The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36/aA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 t.trn is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency. 相似文献
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功率型发光二极管的研究与应用进展 总被引:3,自引:0,他引:3
文章首先对功率型发光二极管的起源和发展作了回顾和简要的叙述.然后以固体光源照明为目标,给出了几种可见光功率发光二极管芯片和封装的典型结构,并且对它们各自的特点进行了比较.最后指出了功率发光二极管作为固体光源取代真空灯泡用于照明在未来的五至十年内将成为现实. 相似文献
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