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The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface
potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner $\theta _0 $. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect (SCE) immunity. 相似文献
2.
The study on mechanism and model of negative bias temperature instability degradation in P-channel metal-oxide-semiconductor field-effect transistors 下载免费PDF全文
Negative Bias Temperature Instability (NBTI) has become one of the most serious reliability problems of metal- oxide-semiconductor field-effect transistors (MOSFETs). The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25-0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction-diffusion model with H+ related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H+ generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H+ generated during NBTI stress. 相似文献
3.
HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS 下载免费PDF全文
Based on the hydrodynamic energy transport model, immunity from the hot-carrier effect in deep-sub-micron grooved-gate p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) is analysed. The results show that hot carriers generated in grooved-gate PMOSFETs are much smaller than those in planar ones, especially for the case of channel lengths lying in the deep-sub-micron and super deep-sub-micron regions. Then, the hot-carrier generation mechanism and the reason why grooved-gate MOS devices can suppress the hot-carrier effect are studied from the viewpoint of physical mechanisms occurring in devices. It is found that the highest hot-carrier generating rate is at a medium gate bias voltage in three stress areas, similar to conventional planar devices. In deep-sub-micron grooved-gate PMOSFETs, the hot-carrier injection gate current is still composed mainly of the hot-electron injection current, and the hole injection current becomes dominant only at an extremely high gate voltage. In order to investigate other influences of the hot-carrier effect on the device characteristics, the degradation of the device performance is studied for both grooved-gate and planar devices at different interface states. The results show that the drift of the device electrical performance induced by the interface states in grooved-gate PMOSFETs is far larger than that in planar devices. 相似文献
4.
Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET 下载免费PDF全文
This paper presents the influences of structural parameters on the immunity of short-channel effects in grooved-gate n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) using the simulator PISCES-II. The zero or negative groove-junction depth is beneficial to the improvement of the threshold characters, but there exists a limited range. The doping concentration of both substrate and channel has a significant influence on the threshold characters as well as on the device transconductance. Thus, the variation in these adjustable parameters may help to optimize the device design. 相似文献
5.
Degradation characteristics of PMOSFETs under negative bias
temperature--positive bias temperature--negative bias temperature
(NBT--PBT--NBT) stress conditions are investigated in this paper. It
is found that for all device parameters, the threshold voltage has
the largest shift under the first NBT stress condition. When the
polarity of gate voltage is changed to positive, the shift of device
parameters can be greatly recovered. However, this recovery is
unstable. The more severe degradation appears soon after
reapplication of NBT stress condition. The second NBT stress causes
in linear drain current to degrade greatly, which is different from
that of the first NBT stress. This more severe parameter shift
results from the wear out of silicon substrate and oxide interface
during the first NBT and PBT stress due to carrier
trapping/detrapping and hydrogen related species diffusion. 相似文献
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7.
分析了槽栅器件中的热载流子形成机理,发现在三个应力区中,中栅压附近热载流子产生概率达到最大.利用先进的半导体器件二维器件仿真器研究了槽栅和平面PMOSFET的热载流子特 性,结果表明槽栅器件中热载流子的产生远少于平面器件,且对于栅长在深亚微米和超深亚 微米情况下尤为突出.为进一步探讨热载流子加固后对器件特性的其他影响,分别对不同种 类和浓度的界面态引起的器件栅极和漏极特性的漂移进行了研究,结果表明同样种类和密度 的界面态在槽栅器件中引起的器件特性的漂移远大于平面器件.为开展深亚微米和亚0.1微米 新型槽栅
关键词:
槽栅PMOSFET
热载流子退化机理
热载流子效应 相似文献
8.
Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal——oxide——semiconductor field-effect transistors (PMOSFETs) 下载免费PDF全文
Hot carrier injection (HCI) at high temperatures and different
values of gate bias Vg has been performed in order to study
the actions of negative bias temperature instability (NBTI) and hot
carriers. Hot-carrier-stress-induced damage at Vg=Vd, where Vd is the voltage of the transistor drain,
increases as temperature rises, contrary to conventional hot carrier
behaviour, which is identified as being related to the NBTI. A
comparison between the actions of NBTI and hot carriers at low and
high gate voltages shows that the damage behaviours are quite
different: the low gate voltage stress results in an increase in
transconductance, while the NBTI-dominated high gate voltage and
high temperature stress causes a decrease in transconductance. It is
concluded that this can be a major source of hot carrier damage at
elevated temperatures and high gate voltage stressing of p-channel
metal--oxide--semiconductor field-effect transistors (PMOSFETs). We
demonstrate a novel mode of NBTI-enhanced hot carrier degradation in
PMOSFETs. A novel method to decouple the actions of NBTI from that
of hot carriers is also presented. 相似文献
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