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1.
Shuichi Ishida Keiki Takeda Atsushi Okamoto Ichiro Shibasaki 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):255
Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ013 meV, the electron effective mass of m*0.10m0 seven times of the band edge mass in bulk InSb and the effective g-factor of |g*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory. 相似文献
2.
利用固相反应法制备了名义成分为Ca(Mn2 Cu1 )Mn4 O1 2 的类钙钛矿锰氧化物 .x射线衍射表明 ,为了获得较为致密的样品和减小杂相含量 ,可以采用高温烧结再在 10 73K长时间空气中退火的制备方法 .样品在低温下同时存在铁磁相和反铁磁相 ,由于反铁磁相的存在导致样品在 4 5K时的磁化强度显著降低 ,并在 8T的高磁场下仍未达到饱和 .样品呈半导体导电性质 ,在 85K和 6T磁场下磁电阻比的最大值可达 - 4 6 % . 相似文献
3.
就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究,并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结,其结电阻与面积的积 矢的绝对误差在10% 以内,隧穿磁电阻的绝对误差在7% 以内,样品的磁性隧道结性质具有较好的均匀性和一致性,可以满足研制磁随机存储器存储单元演示器件的基本要求.
关键词:
磁性隧道结
隧穿磁电阻
磁随机存储器
4英寸热氧化硅衬底 相似文献
4.
5.
Marek Pękała Jan Mucha Benedicte Vertruyen Rudi Cloots Marcel Ausloos 《Journal of magnetism and magnetic materials》2006
Samples of La0.7Ca0.3Mn1−xGaxO3 with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn3+/Mn4+ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping. 相似文献
6.
硬盘驱动器巨磁电阻(GMR)磁头:从微米到纳米 总被引:7,自引:0,他引:7
近年来电脑硬盘存储密度的飞速增长(年增长100%)已超出摩尔定律的预言.这种惊人的高速增长中,最关键的因素是自旋阀纳米多层膜结构,即巨磁电阻(GMR)读传感器磁头的应用.事实上,巨磁电阻磁头读传感器(reader sensor)已经实现由微电子器件向纳米电子器件转化,并且形成大规模产业.这一过程包含了自旋电子学、材料科学、微电子工程学、化学、微机械力学和工程学等诸学科和相关微加工技术综合性挑战极限,进入纳米科技领域实质性进步. 相似文献
7.
A. Barnabé A. Maignan M. Hervieu B. Raveau 《The European Physical Journal B - Condensed Matter and Complex Systems》1998,1(2):145-150
Doping of Mn-site by chromium, cobalt and nickel has been investigated in the calcium rich manganites and
. Whatever the nature of the doping element, a rapid disappearance of the charge ordered (CO) state is observed, decreasing as the doping rate increases. But the most important result concerns the Cr-doped compounds for which a re-entrant insulator to metal transition at 90-120 K is observed for x
=0.10-0.12, in a zero magnetic field. The possibility to induce colossal magnetoresistance (CMR) properties for high (IV) contents ((IV)/) for x
=0.07-0.12 is shown for the first time, the resistance ratios reaching at 30 K. This study also shows differently that the small size of the A-site cation (Pr, Ca) is not a redhibitory obstacle
to the appearance of CMR properties in manganites, in contrast with previously established phase diagrams.
Received: 18 June 1997 / Revised: 4 August 1997 / Accepted: 10 November 1997 相似文献
8.
提出了由中间为高电导率的非铁磁性金属丝外面包裹一层铁磁材料组成的复合结构丝的电流 密度分布和巨磁阻抗(GMI)效应模型,并对Cu/FeCoNi复合丝进行了数值模拟. 结果表明:在 相同的磁性材料几何尺寸和磁特性时,Cu/FeCoNi复合丝铁磁层内的电流随频率的升高比匀 质FeCoNi铁磁丝内的电流更趋于表面分布,而且开始出现趋肤效应时对应的频率明显降低. 当在比较低的频率下就可以观察到明显的MI变化时,复合结构丝中的电阻和电抗变化主要是 由趋肤效应引起,趋肤效应仍然是引起复合结构材料(包括多层薄膜结构)
关键词:
电流密度
巨磁阻抗效应
趋肤效应 相似文献
9.
Interplay of charge, spin, orbital and lattice correlations in colossal magnetoresistance manganites
A. Weiße H. Fehske 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,30(4):487-494
We derive a realistic microscopic model for doped colossal magnetoresistance manganites, which includes the dynamics of charge,
spin, orbital and lattice degrees of freedom on a quantum mechanical level. The model respects the SU(2) spin symmetry and the full multiplet structure of the manganese ions within the cubic lattice. Concentrating on the hole
doped domain ( 0≤x≤0.5) we study the influence of the electron-lattice interaction on spin and orbital correlations by means of exact diagonalisation
techniques. We find that the lattice can cause a considerable suppression of the coupling between spin and orbital degrees
of freedom and show how changes in the magnetic correlations are reflected in dynamic phonon correlations. In addition, our
calculation gives detailed insights into orbital correlations and demonstrates the possibility of complex orbital states.
Received 4 September 2002 / Received in final form 8 November 2002 Published online 31 December 2002 相似文献
10.
T. V. Ramakrishnan H. R. Krishnamurthy S. R. Hassan G. Venketeswara Pai 《Journal of Chemical Sciences》2003,115(5-6):767-774
Manganites of the LA1−x
Ca
x
MnO3 family show a variety of new and poorly understood electronic, magnetic and structural effects. Here we outline a new approach
recently proposed by us, where we argue that due to strong Jahn-Teller (JT) coupling with phonons the twofold degeneratee
g
states at the Mn sites dynamically reorganize themselves into localised, JT polaronsl with exponentially small inter-site hopping, and band-like, nonpolaronic statesb, leading to anew 2-band model for manganites which includes strong Coulomb and Hund’s couplings. We also discuss some results from a dynamical mean-field theory treatment
of the model which explains quantitatively a wide variety of experimental results, including insulator-metal transitions and
CMR, in terms of the influence of physical conditions on the relative energies and occupation of thel andb states. We argue that this microscopic coexistence of the two types of electronic states, and their relative occupation and
spatial correlation is the key to manganite physics.
Dedicated to Professor C N R Rao on his 70th birthday 相似文献