碲镉汞材料中Hg空位缺陷的第一性原理研究

利用基于第一性原理的全电子势线性缀加平面波方法计算了在碲镉汞材料中Hg空位所引起的晶格弛豫以及空位对周围原子成键机制的影响.通过成键过程中电荷密度的变化以及电荷转移的讨论，论述了碲镉汞材料Hg空位引起的弛豫以及这种弛豫产生的主要原因.通过态密度的计算和分析，发现Hg空位的形成将导致第一近邻阴离子Te的5s态能量向高能端移动了055eV，并借助Te 5s态电荷密度与成键电荷密度的计算结果，分析了引起该能态能量平移的主要原因.通过带边态密度变化以及Kohn-Sham(KS)单电子能级的计算和分析，得出了Hg 关键词： 碲镉汞 Hg空位 线性缀加平面波方法     

V+注入锐钛矿TiO2第一性原理研究

用金属离子注入方法在锐钛矿TiO₂薄膜中掺杂了V⁺，采用全势线性缀加平面波方法计算了锐钛矿TiO₂及V⁺掺杂TiO₂超原胞的电子结构，通过紫外-可见吸收光谱测试方法检测了注入不同剂量的V⁺对TiO₂薄膜吸收光谱的影响.理论计算和实验结果表明，锐钛矿TiO₂薄注入V⁺后，带隙宽度变小，吸收光谱发生红移，并且TiO 关键词： +注入')" href="#">V⁺注入 2')" href="#">TiO₂ 全势线性缀加平面波方法 能带结构     

Effect of local atomic disorder on the half-metallicity of full-Heusler Co2FeSi alloy: a first-principles study

This paper investigates the effect of atomic disorder on the electronic structure, magnetism, and half-metallicity of full-Heusler Co2FeSi alloy by using the full-potential linearized augmented plane wave method within the generalized gradient approximation (GGA) and GGA+U schemes. It considers three types of atomic disorders in Co2FeSi alloy: the Co-Fe, Co-Si, and Fe-Si disorders. Total energy calculations show that of the three types of disorders, the Fe-Si disorder is more likely to occur. It finds that for the Co-Si disorder, additional states appear in the minority band-gap at the EF and the half-metallcity is substantially destroyed, regardless of the disorder level. On the other hand, the Co-Fe and Fe-Si disorders have little effect on the half-metallicity at a low disorder level. When increasing the disorder levels, the half-metallcity is destroyed at about 9 % of the Co-Fe disorder level, while that stays at 25 % of the Fe-Si disorder level.     

Linear scaling of the interlayer relaxations of the vicinal Cu(p,p,p − 2) surfaces with the number of atom-rows in the terraces

We investigate the multilayer relaxation trends in the vicinal Cu(p,p,p − 2) surfaces employing the all-electron full-potential linearized augmented plane-wave method. Calculations are performed for the (3 3 1), (2 2 1), (5 5 3), (3 3 2), (7 7 5), and (4 4 3) surfaces, which have 3, 4, 5, 6, 7, and 8 atom-rows in the terrace, respectively. The following trends are identified: (i) The interlayer relaxations perpendicular to the surface scale almost linearly with the number of atom-rows in the terraces. (ii) The nearest-neighbor distances do not depend on the surface termination, but only on the local coordination. (iii) For Cu(p,p,p − 2) in which the topmost n surface layers have nearest-neighbor coordination smaller than the bulk Cu (calculated for the unrelaxed surfaces), the topmost (n − 1) interlayer spacings (d₁₂, … , d_n−1,n) contract compared with the unrelaxed spacing, while the nth interlayer spacing (d_n,n+1) expands. The next (n − 2) interlayer spacings (d_n+1,n+2, … , d_{2n−2,2n−1}) contract, while the interlayer spacing indicated by d_2n−1,2n expands. A similar rule was found for the relaxations parallel to the surfaces. These trends provide a better understanding of the atomic structure of vicinal Cu surfaces.     

First-Principle Calculations for Thermodynamic Properties of LiBC Under High Temperature and High Pressure

The thermodynamic properties of LiBC are investigated by using the full-potential linearized muffin-tin orbital method (FP-LMTO) within the frame of density functional theory (DFT) and using the quasi-harmonic Debye model. The dependencies of the normalized lattice parameters a/a0 and c/c0, the ratio (c/a)/2, the normalized primitive volume V/V0 on pressure and temperature are successfully obtained. It is found that the interlayer covalent interactions (Li-B bonds or Li-C bonds) are more sensitive to temperature and pressure than intralayer ones (B-C bonds), as gives rise to the extreme lattice anisotropy in the bulk hcp LiBC.     

Mg2Si的电子结构和热电输运性质的理论研究

利用全势线性缀加平面波法,对Mg₂Si的几何结构和电子结构进行了计算,得到了稳定的晶格参数以及能带和电子态密度.能带结构表明,Mg₂Si为间接带隙半导体,禁带宽度为020 eV.在此基础上利用玻尔兹曼输运理论和刚性带近似计算了材料的电导率、Seebeck系数和功率因子.结果表明,在温度为700 K时p型和n型掺杂的Mg₂Si功率因子达到最大时的最佳载流子浓度分别为7749×10¹⁹ cm^-3和 关键词： 2Si')" href="#">Mg₂Si 全势线性缀加平面波法 热电输运性质     

氦对LaNi5晶体结构的影响及其扩散特性研究

从密度泛函理论为基础的第一性原理出发,运用全势能线性缀加平面波(FLAPW)方法,对氚衰变后氦在合金中的占位以及LaNi₅He晶体结构进行了理论计算,并系统给出了氦在间隙间的迁移曲线.结果表明,氦原子在十二面体(1b)格位最稳定,并且氦从6m格位向1b格位迁移不存在势垒,而从2d格位向1b格位迁移则需越过1.55eV高的势垒.另外,氦从12n格位穿过12o格位最后到达6m格位也无明显势垒存在,并且处于4h格位之间的氦原子可以自由迁移,而相应12n格位之间的直接迁移则需跨越13.6eV高的势垒.最后还计算给出了氚衰变后合金的态密度、电子密度以及势能分布图,并与相应的LaNi₅H结构作了详细比较. 关键词： 全势能线性缀加平面波(FLAPW) 5He')" href="#">LaNi₅He 态密度 扩散     

Theoretical Calculations for Structural, Elastic and Thermodynamic Properties of MgB2 under High Pressure

We have investigated the structural and elastic properties of MgB₂ under high pressures using the full-potential linearized muffin-tin orbital (FP-LMTO) scheme within the generalized gradient approximation correction (GGA) in the frame of density functional theory. The calculated pressure dependence of the normalized volume is in excellent agreement with the experimental results. At the same time the elastic constants and acoustic anisotropy as a function of applied pressure are presented. Through the quasi-harmonic Debye model, we also investigate the thermodynamic properties of MgB₂.     

First-Principle Calculations for Thermodynamic Properties of LiBC Under High Temperature and High Pressure

The thermodynamic properties of LiBC are investigated by using the full-potential linearlzed muffin-tin orbital method （FP-LMTO） within the frame of density functional theory （DFT） and using the quasi-harmonic Debye model. The dependencies of the normalized lattice parameters a/a0 and c/c0, the ratio （c/a）/2, the normalized primitive volume V/V0 on pressure and temperature are successfully obtained. It is found that the interlayer covalent interactions （Li-B bonds or Li-C bonds） are more sensitive to temperature and pressure than intralayer ones （B-C bonds）, as gives rise to the extreme lattice anisotropy in the bulk hop LiBC.     

Full-Heusler合金X2YGa(X=Co,Fe,Ni;Y=V,Cr,Mn)的电子结构、磁性及半金属特性的第一性原理研究

利用基于密度泛函理论的全势线性缀加平面波方法,结合广义梯度近似,对full-Heusler X₂YGa(X=Co,Fe,Ni;Y=V,Cr,Mn)合金的电子结构、磁性及半金属特性进行了研究,并讨论了自旋-轨道耦合作用对它们的影响.计算结果表明,自旋-轨道耦合作用对full-Heusler X₂YGa(X=Co,Fe,Ni;Y=V,Cr,Mn)合金的电子结构,磁性与半金属特性的影响很小. 当未考虑自旋-轨道耦合作用时,Co₂VGa,Co₂CrGa,和Fe₂CrGa合金为半金属或准半金属铁磁体,加入自旋-轨道耦合作用后体系的自旋极化率将降低1%左右, 它们依然保持很高的自旋极化率.Fe₂MnGa,Co₂MnGa,Ni₂CrGa和Ni₂MnGa合金为一般铁磁体,Fe₂VGa和Ni₂VGa合金为顺磁体. 关键词： 半金属特性 自旋-轨道耦合 Heusler合金 全势线性缀加平面波方法(FLAPW)