A fast method to measure the thickness of removed layer from etching of SSNTD based on EDXRF

Solid state nuclear track detectors are commonly used for measurements of concentrations of radon gas and/or radon progeny. All these measurements depend critically on the thickness of the removed layer during etching. However, the thickness of removed layer calculated using the etching period does not necessarily provide a sufficiently accurate measure of the thickness. For example, the bulk etch rate depends on the strength of stirring during etching for the LR 115 detector. We propose here to measure the thickness of the removed layer by using energy-dispersive X-ray fluorescence spectrometry. In the present work, a reference silver nitrate pellet is placed beneath the LR 115 detector, and the fluorescence X-ray intensity for silver is then measured. We have found a linear relationship between the X-ray intensity and the thickness of the removed layer for LR 115 detector. This provides a fast method to measure the thickness of removed layer from etching of LR 115 detector. However, this method was found to be inapplicable for the CR-39 detector. Therefore, alternative methods have yet to be explored for the CR-39 detector.     

Surface morphologies of anthracene single crystals grown from vapor phase

The morphologies and lattice structures of anthracene single crystals grown from the vapor phase were investigated using optical microscopy, phase contrast microscopy, atomic force microscopy (AFM), and X-ray diffraction analysis. Common morphologies with hexagonal large planes were observed irrespective of crystal size. The observation of certain surface morphologies with a phase contrast microscopy revealed that the spiral steps originated from screw dislocations present on the (0 0 1) planes. Moreover, the center and edge of the (0 0 1) planes had large curvatures, similar to hills. Resultantly, quarter-monolayer (ML) steps were observed on the large and flat planes between both hills.     

n型砷化镓微区光电化学腐蚀过程

在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.     

基于包层模的光纤布拉格光栅折射率传感特性

提出了基于光纤布拉格光栅(FBG)包层模式的折射率传感方案。实验中,利用不同浓度的丙三醇水溶液作为外界折射率传感溶液,采用氢氟酸溶液化学腐蚀的方法来减小光纤包层的直径以增大包层模式对外界折射率的敏感度,研究了腐蚀后光纤布拉格光栅包层模式的耦合波长对外部折射率的变化关系。实验结果表明在1.3300~1.4584的折射率范围内,包层模式耦合波长随外界折射率增大而增大,在接近光纤包层折射率处具有很高的折射率灵敏度,最大达到了172 nm/riu(refractive index unit)。而且,包层模谐振的光谱半峰全宽(约0.07 nm)仅为布拉格纤芯模谐振光谱半峰全宽的1/4,能够获得更好的传感精度。     

A Simplified Model for the Etch Rate of Novolac-Based Photoresist

The novolac-based resins used as positive-tone photoresists are frequently etched in an oxygen plasma. It is desirable to have a predictive model of the photoresist etch rate but, for process improvement, control, and analysis, the development of a rigorous mechanistic model is impractical. Instead, a simplified mechanistic model is derived, here, according to the method proposed by Hougen and Watson for the study of fluid–solid interactions. This model derivation method is employed in order to arrive at a functional form that represents chemical etching of the resist by oxygen radicals, assisted by the plasma ion flux. Values for model parameters are determined from process data by nonlinear regression. The quality of the model fit to the data is tested statistically.     

Effects of textured morphology on the short circuit current of single crystalline silicon solar cells: Evaluation of alkaline wet-texture processes

The effect of different surface morphologies obtained by anisotropic etching on the light trapping and short circuit current of single crystalline silicon solar cells was investigated. The anisotropic texturing of a (1 0 0) silicon surface was performed using potassium hydroxide (KOH) solution and/or tetramethylammonium hydroxide (TMAH) solution including isopropyl alcohol (IPA) additive or tertiary butyl alcohol (TBA) additive. Texturing in TMAH solution formed smaller pyramids on the textured surface compared with texturing in KOH solution. Although the textured samples showed similar reflectances (except in the case of the TBA additive), they showed different short circuit currents. Texturing in KOH/TMAH solution led to a 9.6% increase in short circuit current compared with texturing in KOH/IPA solution, a typical etchant in commercial processes. Based on these results, the reflectivity has no simple proportionality relationship to the short circuit current, and the short circuit current of silicon solar cells should be the criterion used in evaluating texturing effects on reducing reflectance and forming a sound junction with high collection efficiency.     

On the response of LR-115 plastic track detector to 10 20 Ne-ion

The track etch rates of ₁₀ ²⁰ Ne-ion in cellulose nitrate (LR-115) have been measured for different temperatures and the activation energy is determined. The experimental results show that both the track etch rate and the normalized track etch rate depend on the energy loss as well as on etching temperature. The maximum etched track length of ₁₀ ²⁰ Ne-ion agrees with the theoretically computed range. The experimental results show that there is no sharp threshold, at least in CN(LR-115).     

深蚀刻二元光学元件

提出一种新颖的，蚀刻位相深度超过２π的深蚀刻二元光学技术，并从理论上分析深蚀刻二元光这元件与衍射效率的关系，然后用计算机进行模拟与分析，得到深蚀刻二元光学元件特性后一些初步研究结果。     

Effect of high gamma dose on the PADC properties

The effect of the properties of PADC nuclear track detectors after exposure to high doses of gamma absorbed doses up to 5×10⁵ Gray (50 Mrad) were studied. The gamma source was a 9.03 PBq (244 KCi), Co-60 source. Results indicate that each of the bulk etch rate (V_b), the tracks etch rate (V_t) and the sensitivity (V) of the detectors increases with the high gamma absorbed dose, but there is a drop in these parameters at the low gamma absorbed dose. Signs of surface roughness were observed by increasing the gamma absorbed doses and changes in color observed for doses larger than 2×10⁵ Gray. The temperature of detectors during irradiation time reached 41°C. The fission fragment tracks (from Cf-252 source) disappeared quickly within the etching time (minutes) for total absorbed doses greater than 3×10⁵ Gray due to their high bulk etch rate.     

感应耦合等离子刻蚀技术研究

依据感应耦合等离子体的刻蚀机理，对影响刻蚀的两个重要参数及先进的硅刻蚀技术进行了较深入的研究，并对影响刻蚀效果的参数进行了实验研究，刻蚀出了20μm深，2μm宽的谐振器结构，得到了最佳的工艺参数。