A modified Kinetic Lattice Monte Carlo model has been developed to predict growth rate regimes and defect formation in the case of the homo-epitaxial growth of close packed crystalline structures. The model is an improvement over standard Monte Carlo algorithms, which usually retain fixed atom positions and bond partners indicative of perfect crystal lattices. Indeed, we extend the concepts of Monte Carlo growth simulations on super-lattices containing additional sites (defect sites) with respect to those of the reference material. This extension implies a reconsideration of the energetic mapping, which is extensively presented, and allows to describe a complex phenomenology that is out of accessibility of standard stochastic approaches. Results obtained using the Kawasaki and the Bond-Counting rules for the transition probability of the Monte Carlo event are discussed in details. These results demonstrate how the defect types (local or extended), the formation mechanisms and the defect generation regimes can be characterized using our approach. 相似文献
In this study, we prepared SrxBa1 – xNb2O6 (x = 0.3, 0.5 and 0.7) thin film on 0.75 wt% La doped SrTiO3 (100) and (110) single crystal substrates. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethlene glycol monomethyl ether as solvents. The substrates were coated with the solution by spin coating method. As-coated thin films were heated from 973 to 1273 K in air. The grains of the thin film on La doped SrTiO3 (100) were pillar shaped and arranged in right angle to each other. On the other hand, the grains of these thin films on La doped SrTiO3 were pillar shape and arranged in one direction. The crystallographic relationship of the thin film between SrxBa1 – xNb2O6 and substrate that the 130 and 310 direction of the thin film on the substrate were oriented with c-axis in parallel to the substrate surface. On the other hand, (hk0) phase diffractions of SrxBa1 – xNb2O6 thin film on the substrate (110) were investigated in the XRD theta-2theta measurement. It is expected that the SrxBa1 – xNb2O6 (x = 0.3, 0.5 and 0.7) were highly oriented or epitaxial growing on La doped SrTiO3 (110) single crystal substrate. 相似文献
Mixed oxides CoxAlyO4 with different Al/Co ratios applied as supports for the catalysts of the Fischer-Tropsch synthesis were prepared using the
solid-state chemical reaction. The CoxAlyO4 supports were prepared by modifying gibbsite with various cobalt salts (acetate, nitrate, and basic carbonate). The use of
basic cobalt carbonate gives the Co(20%)/CoxAlyO4 catalyst, which provides an increased yield of hydrocarbons C5+ and a decreased methane content compared to the impregnation catalyst Co(30%)/Al2O3. The introduction of small amounts of rhenium additives makes it possible to enhance the yield of hydrocarbons C5+ (179 g m−3) and also to increase the selectivity with respect to the C5–C18 fraction. The introduction of basic cobalt carbonate into the support, most likely, creates favorable conditions for the
epitaxial growth of the precursor of the active phase.
Dedicated to Academician G. A. Abakumov on the occasion of his 70th birthday.
Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1856–1860, September, 2007. 相似文献
The creation of hierarchical nanostructures in polymeric materials has been intensively studied due to the great potential to tailor their physicochemical properties. Although much success has been achieved over the past decades in block copolymers, hierarchical structure engineering in polymer blends remains a great challenge. Here, the formation of hierarchical lamellae‐in‐lamella nanostructures from polymer blends via controlled nonequilibrium freezing is reported. Polymer blends are first dissolved in molten hexamethylbenzene (HMB) to form a homogeneous melt. When cooled to below its melting temperature, the HMB is crystallized and depleted, and the polymers are directionally solidified. This process is rapid enough that phase separation of the polymer blends is kinetically trapped at the nanoscale level. Then, the polymer blend epitaxially crystallizes onto the HMB inside the nanophase, resulting in the hierarchical lamellae‐in‐lamella structure. This structure is stable under ambient conditions and tunable depending on the annealing temperature and blending ratio.
Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ~10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.
The resistive response of atomic layer deposited thin epitaxial α-Cr2O3(0 0 1) films, to H2 and CO in air, was studied. The films were covered with Pt nanoislands formed by electron-beam evaporation of a sub-monolayer
amount of the material. The gas measurements were performed at 250°C and 450°C. These temperatures led to different proportion
of chemical states, Pt2+ and Pt4+, to which the Pt oxidized. The modification was ascertained by the X-ray photoelectron spectroscopy method. As a result of
the modification, the response was fast at 250°C, but slowed at 450°C. A disadvantageous abundance of Pt4+ arising at 450°C in air could be diminished by high-vacuum annealing thus restoring the response properties of the system
at 250°C.
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