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1.
C. Maurel 《Surface science》2006,600(2):442-447
Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS2 surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS2 surface so that their electrical behavior can be changed depending on their position with regard to the other islands. 相似文献
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3.
V. S. Gorelik P. P. Sverbil' A. B. Fadyushin V. V. Vasil'ev 《Journal of Russian Laser Research》2004,25(1):54-63
A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10-3 cm-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented. 相似文献
4.
I. A. Anoshko V. S. Ermachenko L. E. Sandrigailo 《Journal of Applied Spectroscopy》2007,74(1):102-106
We present the results of a spectroscopic study of a nonequilibrium plasma in a Hall accelerator, in particular for such an
important parameter as the electron temperature. For the studied conditions, we used the semicoronal equilibrium model, which
relates the intensity ratios for two successive ionization steps for the same element.
__________
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 93–96, January–February, 2007. 相似文献
5.
Yu. D. Perfiliev V. S. Rusakov L. A. Kulikov A. A. Kamnev K. Alkhatib 《Hyperfine Interactions》2006,167(1-3):881-885
To explain line broadening in emission Mössbauer spectra as compared to the corresponding absorber measurements, the model of trapped electrons has been proposed. Auger electrons (emitted, e.g. after electron capture by 57Co or after the converted isomeric transition of 119mSn), as well as secondary electrons, may be trapped in the proximity to the nucleogenic ion. Electrons captured by lattice traps at different distances from the daughter ion induce an asymmetric distribution of quadrupole splitting in the resulting emission spectra, as shown in a few examples. This model is supported by estimates of quadrupole splitting values which may be caused by such trapped electrons located at specified distances from the nucleogenic atom. 相似文献
6.
G. Kocher-Oberlehner W. Jantsch L. Palmetshofer A. Ulyashin 《Physica E: Low-dimensional Systems and Nanostructures》2003,16(3-4):347
Erbium (Er)- and oxygen (O)-doped Cz–Si was additionally doped with hydrogen, using plasma enhanced chemical vapour deposition. Photoluminescence (PL) spectra show a large enhancement especially for samples treated with solid phase epitaxy before hydrogenation and annealing at 900°C later. Secondary ion mass spectroscopy measurements give evidence for an enhanced diffusion of O and Er at this temperature towards the surface. Etching shows that the PL does not stem from the heavily doped surface layer but from a deeper region with lower Er concentration. This conclusion is supported by the appearance of the so-called “cubic” centre with low solubility. Comparing the PL yield of the hydrogenated samples to that of samples with similar Er volume concentration but without hydrogenation still gives a large enhancement. We thus conclude that hydrogen can enhance the solubility of the cubic centre in Si:Er,O. 相似文献
7.
Spontaneous emission behavior from atoms (or molecules) in one-dimensional photonic crystal with a defect is investigated. Taken all the TE and TM modes into account, the normalized spontaneous emission rate of the atom is calculated as a function of the position of the atom in the crystal. Results for both nonabsorbing dielectric structure and absorbing dielectric structure are presented. With the increase of the thickness of the defect in which the atoms are embedded, the oscillations of the spontaneous emission rate versus the position of the atom become dense and the lifetime distribution becomes narrow and sharp. The PC effect may lead to the coexistence of both accelerated and inhibited decay processes. 相似文献
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9.
测量了Cr^4+,YAG、Cr^4+,Mg2SiO4晶体在室温和液氮温度下的荧光光谱,吸收光谱和激发态寿命,讨论了温度变化时,两种晶体中Cr^4+近红外辐射积分强度变化与激光发态寿命变化的关系,得出结论:在77K ̄300K范围内,Cr^4+的^3T2能级荧光辐射截面本身受温度影响不大,Cr^4+辐射荧光的变化,主要是由无辐射弛豫速率随温度变化而引起的。 相似文献
10.
掺杂Er^3+的TiO2的发射光谱研究 总被引:1,自引:1,他引:0
用无水乙醇、冰醋酸、钛酸丁酯凝胶法制备了掺杂Er^3+的TiO2粉末,测量了其在488m激发下的Stokes发射光谱和980nm激发下的上转换发光光谱。在可见光范围内,观察到了绿光和红光,绿光从500-570nm,对应Er^3+的^2H11/2,^4S3/2→^4I15/2,红光从650~690m,对应Er^3+的^4F9/2→^4I15/2的跃迁。由ln Ivis-In Iin曲线可知,绿光和红光均为双光子过程,光强正比于泵浦功率的二次方,即Iout ∝Iin。初步研究了此材料的上转换过程。 相似文献