A new molecular rectifier device and some research in its processing

Organic materials of D-π-A type MR-X (MR-1: p-dimethylaminophenylethenetrica-rbonitrile and MR-2: p-diphenylaminophenylethene tricarbonitrile) were designed and synthesized. The device with a sandwich structure shows good rectificative phenomena. The highest rectification ratio 10000 was achieved in device Cu/MR-1/Ag, and about 100 in other device M/MR-X/M (M: Cu, Ag). It has been found that rectificative phenomena exist only in the atmosphere-liquid interface region by means of liquid adsorption, and electric field could help form the oriented molecular film. __________ Translated from Journal of Fudan University (Natural Science), 2005, 44(4) (in Chinese)     

钙钛矿型Sr_（1－x）Bi_xFeO_（3－y）系列物的结构、电性及铁氧化态研究

在１１００℃制备了钙钛矿型非计量系列物Ｓｒ_（１－ｘ）Ｂｉ_ｘＦｅＯ_（３－ｙ），与文献相比，明显具有温度低、时间短、能耗少的特点。用化学分析方法测得其化学式及Ｆｅ离子的平均价态，用ＸＲＤ、交流阻抗、ＩＲ、Ｍｏｓｓｂａｕｅｒ谱等方法研究了其结构与性质，该类化合物具有Ｐｍ３ｍ对称性和半导体性质，铁离子会产生电荷歧化现象。     

浅析二阶齐次线性变系数微分方程的一个可积类型

本文讨论了二阶齐次线性变系数微分方程的特殊形式，给出了这种微分方程的一个可积类型．     

区间中立型大系统的强壮稳定性

本文讨论中立型大系统,获得了这类问题稳定性的一些充分判据,作为特殊情况,还得到了与[1-11]中相应的一些不同的结果.这些结果并不象文献[1]和[2]那样,要求a_(ii)的上界q_(ii)小于零.     

直流稳压电源波形演示器制作说明

直流稳压电源可以将交流电压变换为直流电压,并使之稳定,在我们现实生活中应用很广泛,在实验中我们利用的电学知识,设计制造了一种直流稳压电源。本文简要介绍了这种直流稳压电源波形演示器的设计目的和电路原理,重点阐述了它的制作流程、滤波和稳压原理以及性能测试输出波形。     

ZnSe及ZnSe/GaAs异质结构中压力导致的直接禁带向间接禁带的转变

用经验赝势方法计算了体ZnSe以及ZnSe/GaAs单异质结系统中ZnSe外延层г、X、L等特殊对称点导带底能量随压力的变化。结果表明，同Si、Ge、GaAs等半导体材料不同，ZnSe的X点导带底具有正的压力系数，但比г点的压力系数小，这是ZnSe材料以及ZnSe基异质结构材料发生直接禁带向间接禁带的转变时所需转变压力较大的根本原因。研究了ZnSe/GaAs异质结构中晶格失配造成的应变对外延层г、X、L对称点压力系数的影响，表明这种晶格失配造成的应变可以极大地减小ZnSe外延层材料由直接禁带向间接禁带的转变压力。     

Multidimensional transonic shocks and free boundary problems for nonlinear equations of mixed type

We establish the existence and stability of multidimensional transonic shocks for the Euler equations for steady potential compressible fluids. The Euler equations, consisting of the conservation law of mass and the Bernoulli law for the velocity, can be written as a second-order, nonlinear equation of mixed elliptic-hyperbolic type for the velocity potential. The transonic shock problem can be formulated into the following free boundary problem: The free boundary is the location of the transonic shock which divides the two regions of smooth flow, and the equation is hyperbolic in the upstream region where the smooth perturbed flow is supersonic. We develop a nonlinear approach to deal with such a free boundary problem in order to solve the transonic shock problem. Our results indicate that there exists a unique solution of the free boundary problem such that the equation is always elliptic in the downstream region and the free boundary is smooth, provided that the hyperbolic phase is close to a uniform flow. We prove that the free boundary is stable under the steady perturbation of the hyperbolic phase. We also establish the existence and stability of multidimensional transonic shocks near spherical or circular transonic shocks.

     

The Iyengar Type Inequalities with Exact Estimations and the Chebyshev Central Algorithms of Integrals

In this paper, both low order and high order extensions of the Iyengar type inequality are obtained. Such extensions are the best possible in the same sense as that of the Iyengar inequality. hzrthermore, the Chebyshev central algorithms of integrals for some function classes and some related problems are also considered and investigated.     

Development in Synthesis,Electrochemistry, LB Moieties of Phenothiazine Based Units

A convenient and higher yielding synthetic route to N‐alkyl‐bis(thiophene)phenothiazine derivatives is reported and their aggregation, electrochemical properties and polymerization are characterized. The key step in the synthesis of this group of compounds has been the Stille type coupling reaction between the N‐alkyldibromophenothiazine and tin derivatives of thiophene as the best way for preparation of conjugated N‐alkylphenothiazine derivatives. For this group of compounds we also present an electrochemical polymerization effect and widely adopted approach to prepare structurally ordered thin, electroconducting films by Langmuir–Blodgett technique.