Full counting statistics of transport electrons through a two-level quantum dot with spin–orbit coupling

We study the full counting statistics of transport electrons through a semiconductor two-level quantum dot with Rashba spin–orbit (SO) coupling, which acts as a nonabelian gauge field and thus induces the electron transition between two levels along with the spin flip. By means of the quantum master equation approach, shot noise and skewness are obtained at finite temperature with two-body Coulomb interaction. We particularly demonstrate the crucial effect of SO coupling on the super-Poissonian fluctuation of transport electrons, in terms of which the SO coupling can be probed by the zero-frequency cumulants. While the charge currents are not sensitive to the SO coupling.     

Sufficient Conditions for a Digraph to be Supereulerian

A (di)graph is supereulerian if it contains a spanning eulerian sub(di)graph. This property is a relaxation of hamiltonicity. Inspired by this analogy with hamiltonian cycles and by similar results in supereulerian graph theory, we analyze a number of sufficient Ore type conditions for a digraph to be supereulerian. Furthermore, we study the following conjecture due to Thomassé and the first author: if the arc‐connectivity of a digraph is not smaller than its independence number, then the digraph is supereulerian. As a support for this conjecture we prove it for digraphs that are semicomplete multipartite or quasitransitive and verify the analogous statement for undirected graphs.     

环状连续强激光下光学薄膜的瞬温和热畸变

详细研究了非冷却光学薄膜元件在环形激光光束辐照下的瞬态温度分布和随后的热畸变，并且用泰曼干涉仪实际测量了连续波氧碘激光辐照各种非冷却光学元件的热畸变量并与理论计算相比较，分析结果表明理论和实验相一致。     

190区超形变核中转动带的组态结构

通过系统研究A～190区超形变核中转动带的转动惯量、角动量顺排、旋称分裂随转动频率的变化规律, 结合我们用处理对力的粒子数守恒方法的计算结果, 对A～190区所有转动带的组态结构给出了一个整体的描述. 绝大多数超形变带都建立在强耦合轨道上, 例如中子[512]5/2, [624]9/2. 少数超形变带则建立在高j闯入轨道上, 即中子[761]3/2, [752]5/2. 根据我们提出的组态结构所进行的理论计算结果表明, A～190区所有转动带的一般行为、反常变化和带交叉都得到了满意的解释.     

Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.     

全景图像几何畸变校正的算法研究及其软件实现

对于360°视场的全景图像,本文提出了分别对其进行切向和径向畸变校正的处理算法,并用插值处理提高处理精度。达到了将全景图像恢复为常规视场平面像的目的。它是进一步图像分析的前期工作。     

BIFURCATIONS OF ROUGH 3—POINT—LOOP WITH HIGHER DIMENSIONS

The authors study the bifurcation problems of rough heteroclinic loop connecting three saddle points for the case β1 > 1, β2 > 1, β3 < 1 and β1β2β3 < 1. The existence, number, coexistence and incoexistence of 2-point-loop, 1-homoclinic orbit and 1-periodic orbit are studied. Meanwhile, the bifurcation surfaces and existence regions are given.     

具有奇异值分解性质的代数

设F为一个域,R为一个带有对合的F-代数,如果R上每一个矩阵都有奇异值分解(简称SVD),则称R为一个有SVD性质的F-代数.本文指出:R为一个有SVD性质的F-代数的充要条件是:R同构于R~+,或R~+上二次扩域,或R~+上四元数体((-1,-1)/R~+),其中R~+为R的对称元集合,并且R~+为一个Galois序闭域.     

Browder-Petryshyn 型的严格伪压缩映射的粘滞迭代逼近方法

主要研究Browder-Petryshyn型的严格伪压缩映射的粘滞迭代逼近过程,证明了Browder-Petryshyn型的严格伪压缩映射的不动点集F(T)是闭凸集．在q-一致光滑且一致凸的Banach空间中,对于严格伪压缩映射T,利用徐洪坤在2004年引进的粘滞迭代得到的序列弱收敛于T的某个不动点．同时证明了Hilbert空间中Browder-Petryshyn型的严格伪压缩映射的相应迭代序列强收敛到T的某个不动点,其结果推广与改进了徐洪坤2004年的相应结果．     

开关布局中本质不同的开关线路计算

通过对开关布局问题的研究，来解决一类象开关线路一样比较特殊，比较复杂的布局优化问题。从而寻找出这类问题的全局优化算法。本应用对称群对集合的作用，轨道，不动点等讨论了开关布局问题，给出了本质不同的开关线路个数的计算公式。