Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator.This paper discusses the electric field distribution,spectral response and transient response of the device.Due to utilizing p-SiCGe charge-compensation layer,the responsivity increases nearly two times and breakdown voltage increases 33%.The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time.With an increase of the light power density and wavelength,the rise time and fall time will become shorter and longer,respectively.In terms of carrier lifetime,a compromise should be made between the responsivity and switching speed,the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.     

Local structure distortion and spin Hamiltonian parameters for Cr3＋-Vzn tetragonal defect centre in Cr3＋ doped KZnF3 crystal

The quantitative relationship between the spin Hamiltonian parameters (D, g_‖, Δg) and the crystal structure parameters for the Cr³⁺—V_Zn tetragonal defect centre in a Cr³⁺:KZnF₃ crystal is established by using the superposition model. On the above basis, the local structure distortion and the spin Hamiltonian parameter for the Cr³⁺—V_Zn tetragonal defect centre in the KZnF_3 crystal are systematically investigated using the complete diagonalization method. It is found that the V_Zn vacancy and the differences in mass, radius and charge between the Cr³⁺ and the Zn²⁺ ions induce the local lattice distortion of the Cr³⁺ centre ions in the KZnF₃ crystal. The local lattice distortion is shown to give rise to the tetragonal crystal field, which in turn results in the tetragonal zero-field splitting parameter D and the anisotropic g factor Δg. We find that the ligand F^- ion along [001] and the other five F^- ions move towards the central Cr³⁺ by distances of Δ₁ = 0.0121 nm and Δ₂ = 0.0026 nm, respectively. Our approach takes into account the spin—orbit interaction as well as the spin—spin, spin—other-orbit, and orbit—orbit interactions omitted in the previous studies. It is found that for the Cr³⁺ ions in the Cr³⁺:KZnF₃ crystal, although the spin—orbit mechanism is the most important one, the contribution to the spin Hamiltonian parameters from the other three mechanisms, including spin—spin, spin—other-orbit, and orbit—orbit magnetic interactions, is appreciable and should not be omitted, especially for the zero-field splitting (ZFS) parameter D.