Renormalization Effects in the Spectrum of a Coherently Driven Exciton–Biexciton System

Starting from the total Hamiltonian of an excited exciton–biexciton system, nonresonant renormalizations in the electronic spectrum of a coherently driven direct semiconductor are considered. Stringent group-theoretical inclusion of the particle spin in the Hamiltonian allows one to account for the dependence of different renormalization effects on polarizations of the incident laser fields. On the example of circularly polarized driving and probing pulses it is shown that the kind of observed renormalization is defined by the pump-and-probe polarization geometry. Thus, the exciton optical Stark effect must appear in the case of co-circular pump-and-probe, whereas a mixing of the polariton and biexciton spectra is possible only in the case of counter-circular pump-and-probe. The polariton--biexciton dispersion renormalization may manifest itself as synchronous splittings of the exciton--polariton and biexciton spectra under resonant pumping at a frequency of the polariton--biexciton transition, or in their shifts in opposite directions under near-resonant pumping. The mechanisms of both kinds of renormalization effects are analyzed, and the dependence of their characteristics on the pump parameters and microscopic parameters of the exciton–biexciton–photon system is established. An evaluation of the characteristics shows that the effect of polariton–biexciton dispersion renormalization dominates in the spectra of semiconductors with stable biexciton formation. Results of the theoretical study provide an adequate explanation of available experimental data.     

链间耦合对聚合物中双激子态反向极化的影响

从紧束缚模型出发，研究了链间相互作用对双激子态反向极化的影响.结果发现：加链间耦合后，双激子态仍主要局域在一条链中.当简并破缺较小时，反向极化程度随耦合强度的增加大幅提高；当简并破缺较大时，反向极化程度随耦合强度的增加基本不变. 关键词： 反向极化 双激子态 链间耦合     

高分子中激子和双激子的极化率(解析计算)

高分子的电致发光是载流子在电场中的输运和复合,为了阐明它的机理,需要研究高分子中激子的极化性质,首先求得了激子和双激子的解析解,然后用线性响应的Green函数方法计 算了两者的极化率,解析地证明了一个重要的结论：激子的极化率为正,双激子的极化率为负.从激子跃迁至双激子,高分子的电偶极矩要反转方向. 关键词： 激子 双激子 解析解 负极化率     

InAs 单量子点中级联辐射光子的关联测量

利用分子束外延生长InAs单量子点样品,温度为5 K时,测量了单量子点中单、双激子自发辐射的荧光(PL)光谱.研究了单、双激子发光强度随激发功率的变化及对应发光峰的偏振特性和精细结构劈裂.基于Hanbury-Brown Twiss(HBT) 实验,测量了单、双激子间发光光谱的关联函数,证实了其发光过程为级联发射过程. 关键词： InAs 单量子点 单、双激子 荧光光谱 级联辐射     

Vector classification, doublet splitting of exciton and biexciton subbands in crystals, and selection rules for transitions between them

The analysis of experimental data on absorption, reflection, luminescence in the region of exciton and biexciton phototransitions in CdS, including P-band structure, shows that there is doubled, contrary to known theory, number of free exciton and biexciton states. This discreapancy is removed in the vector model of these states presented in this paper. The selection rules for transitions between exciton (biexciton) states in crystals taking into consideration their L-T splitting are obtained. The spectra of stimulated FIR radiation on excitonic transitions in CdS, previously obtained experimentally, well fit to these selection rules.     

通过飞秒泵浦探测技术研究PbS纳米颗粒的激发态瞬态动力学过程

利用飞秒泵浦探测技术研究了PbS半导体纳米颗粒复合的SiO₂溶胶凝胶薄膜的瞬态动力学过程。通过改变激发探测波长和激发光强度,研究引起PbS半导体纳米颗粒的非线性吸收的两种机制。当激发探测波长选在激子吸收峰附近(620nm)时,由于激子的饱和吸收引起的光致漂白,当激发波长选在激子能态的低能侧(753,800nm),同时观察到激子的饱和吸收和双激子效应引起的光致吸收。研究了激子的饱和吸收和双激子效应引起的激发态吸收随激发态电子-空穴对浓度的变化关系,表明双激子效应与载流子浓度有很大关系。在高激发强度下,双激子效应引起的诱导吸收远远大于激子跃迁引起的光致漂白,双激子效应在非线性吸收中起着决定性作用。     

Backward Charge Transfer in Conjugated Polymers

It has been known that the static polarizability of a polymer chain with a biexciton is negative. In order to understand this peculiar fact, this paper studies the dynamical process of the charge transfer in the polymer chain induced by an external electric field E during forming the biexciton. The time dependence of the charge distribution in the chain reveals that the charge transfer is backward: the positive charge shifts in the opposite direction of the external electric field. Such a backward charge transfer (BCT) produces an opposite dipole, which makes the polarization negative. The effect of electron interaction on the BCT is illustrated.     

Two-photon emission in coupled biexciton quantum dot–cavity system： Phonon-assisted model

We theoretically analyze the steady state emission spectrum and transient temporal dynamics in a coupled biexciton quantum dot（QD）–cavity system. For steady state, a phonon-assisted biexciton–exciton cascade model under continuous wave（CW） excitation is presented to explain the asymmetric QD–cavity emission spectrum intensities（intensities of cavity,exciton, and biexciton emission peak） in off-resonance condition. Results demonstrate that the electron–phonon process is crucial to the asymmetry of emission spectrum intensity. Moreover the transient characteristics of the biexciton–exciton cascade system under pulse excitation show abundant nonlinear temporal dynamic behaviors, including complicated oscillations which are caused by the four-level structure of QD model. We also reveal that under off-resonance condition the cavity outputs are slightly reduced due to the electron–phonon interaction.     

Exciton-Boson Formalism in the Theory of Laser-Excited Semiconductors and Its Application in Coherent Four-Wave-Mixing Spectroscopy

By the use of a bosonization transformation and group-theoretical arguments, the Hamiltonian of an electron–hole–photon system in a laser-excited direct two-band semiconductor is transcribed into that of an exciton–photon system with the particle spins rigorously taken into consideration. It is shown that the third-order optical nonlinearities in the spectral region below the band edge have their microscopic origin in two-exciton correlations, which are expressed in terms of the effective exciton–exciton and anharmonic exciton–photon interactions. The dependence of the interparticle interactions on the spin states of quasiparticles is behind the polarization dependence of the semiconductor nonlinear optical response. On the example of the system of heavy hole excitons in quantum wells, grown from compounds with the zinc blende type of symmetry, it is demonstrated that the effective exciton–exciton interaction in two-exciton states with nonzero total spin is repulsive, while in zero-spin states it is attractive, which may result in the biexciton formation. The derived Heisenberg equations of motion for the exciton and biexciton operators form the basis for a theoretical study of the coherent four-wave-mixing in GaAs and ZnSe quantum wells. It is readily apparent from the equations that in different polarization configurations the coherent four-wave-mixing is generated by different ingredients of two-exciton Coulomb correlations: in the co-circular configuration, it is the interexciton repulsion, in the cross-linear configuration, the formation of the biexciton and its coupling to excitons, and in the collinear configuration, both of them jointly. The obtained expressions for the time-resolved and frequency-resolved four-wave-mixing signals adequately describe the main characteristics and various details of wave mixing phenomena, including a biexciton signature in the appropriate polarization configurations. Results of the work clarify the microscopic mechanism of the polarization dependence in coherent four-wave-mixing spectroscopy in semiconductor quantum wells.     

Correlated photons from multi-carrier complexes in GaAs quantum dots

We have studied micro-photoluminescence spectra of a self-assembled single GaAs quantum dot under 8 K. With strong pulsed excitation, the micro-photoluminescence spectrum shows bright emission lines originated from an exciton, a positively charged exciton, and a biexciton, together with weak lower energy emissions reflecting multi-excitonic structures with more carriers. We have identified the origins of these weak emission lines, and showed the existence of charged biexciton states, through single photon correlation measurements and excitation power dependence of the photoluminescence intensity. In addition, investigating the radiative recombination process of the charged biexciton, we have determined the electron–hole exchange energy in the GaAs quantum dot.