Nonvolatile write‐once read‐many‐times memory behaviors of polyimides containing tetraphenyl fluorene core and the pendant triphenylamine or carbazole moieties

To better understand the structure–property relationships, two novel aromatic diamines containing tetraphenyl fluorene (TPF) moiety through triphenylamine (TPA) unit and carbazole (Cz) unit modification are designed and synthesized, respectively. Four thermally stable and excellent solubility polyimides are prepared and characterized. The excellent film‐formation ability and thin film stability are investigated by X‐ray diffraction (XRD) and atom force microscopy (AFM) measurements, respectively. The memory devices are fabricated, PIs films with low water uptakes sandwiched between indium‐tin oxide (ITO) ground electrode and Al top electrode, and exhibit nonvolatile write‐once read‐many‐times (WORM) memory behaviors with low threshold voltages, due to increasing the retention time through regulating the energy level. The current conduction mechanisms of all devices are linearly fitted by theoretical conduction model. Molecular simulations are used to demonstrate switching mechanism and the memory effects. The experimental results provide a sight for the design‐adjustable switching voltage of memory devices. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018 , 56, 1630–1644     

侧链含有不同电子受体的聚咔唑衍生物的合成及其WORM型存储性能

利用Suzuki偶联反应合成了3种侧链含有不同电子受体的可溶性D-A型聚咔唑衍生物:聚[(9-(2-己基葵基)-9 H-咔唑)-(9-(4-硝基苯基)-9 H-咔唑)](PCz-NO_2)、聚[(9-(2-己基葵基)-9 H-咔唑)-(4-(9 H-咔唑-9-基)苯甲醛)](PCz-CHO)和聚[(9-(2-己基葵基)-9 H-咔唑)-(4-(9 H-咔唑-9-基)苯甲腈)](PCz-CN)。基于这3种聚合物的存储器件(器件结构:Al(200nm)/高分子(90nm)/氧化铟锡(ITO)均表现出典型的电双稳电子开关效应和非易失性一次写入多次读出(WORM)型存储性能。随着共轭聚合物光学带隙的增加[2.26eV(PCz-NO_2)→2.79eV(PCzCHO)→3.20eV(PCz-CN)],相应器件的启动阈值电压逐渐增大(-1.70V→-1.81V→-1.89V);而电流开关比(ON/OFF)则依次减小(6.63×10~4→4.08×10~4→5.68×10~3)。含氰基的聚咔唑衍生物需要的开启电压最大,展现出来的电流开关比在3种聚合物中则最小。     

Synthesis of polyimides containing triphenylamine‐substituted triazole moieties for polymer memory applications

A series of thermally stable aromatic polyimides containing triphenylamine‐substituted triazole moieties ( AZTA‐PI )s were prepared and characterized. The glass transition temperatures (T_g) of the polyimides were found to be in the range of 262–314 °C. The polyimides obtained by chemical imidization had inherent viscosities of 0.25–0.44 dL g^?1 in N‐methyl‐2‐pyrrolidinone. The number average molecular weights (M_n) and weight average molecular weights (M_w) were 1.9–3.2 × 10⁴ and 3.2–5.6 × 10⁴, respectively, and the polydispersity indices (PDI = M_w/M_n) were in the range of 1.70–1.78. A resistive switching device was constructed from the 4,4′‐hexafluoroisopropylidenediphthalic dianhydride‐based soluble polyimide ( AZTA‐PIa ) in a sandwich structure of indium‐tin oxide/polymer/Al. The as‐fabricated device can be switched from the initial low‐conductivity (OFF) state to the high‐conductivity (ON) state at a switching threshold voltage of 2.5 V under either positive or negative electrical sweep, with an ON/OFF state current ratio in the order of 10⁵ at ?1 V. The device is able to remain in the ON state even after turning off the power or under a reverse bias. The nonvolatile and nonrewritable natures of the ON state indicate that the device is a write‐once read‐many times (WORM) memory. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010     

A Supramolecular Approach on Using Poly(fluorenylstyrene)‐block‐poly(2‐vinylpyridine):PCBM Composite Thin Films for Non‐Volatile Memory Device Applications

Supramolecular composite thin films of poly[4‐(9,9‐dihexylfloren‐2‐yl)styrene]‐block ‐poly(2‐vinylpyridine) (P(St‐Fl)‐b‐P2VP):[6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) were prepared for write‐once‐read‐many times (WORM) non‐volatile memory devices. The optical absorption and photoluminescence results indicated the formation of charge transfer complexation between the P2VP block and PCBM, which led to the varied PCBM aggregated size and memory characteristics. The ITO/PCBM:(P(St‐Fl)‐b‐P2VP)/Al device exhibited the WORM characteristic with low threshold voltage (−1.6 to −3.2 V) and high ON/OFF ratio (10³ to 10⁵) by tuning the PCBM content. The switching behavior could be explained by the charge injection dominated thermionic emission in the OFF state and field‐induced charge transfer in the ON state. The present study provides a novel approach system for tuning polymer memory device characteristics through the supramolecular materials approach.

     

基于三苯胺和芴的D—A型高分子信息存储材料的合成及性能

设计和合成了一种高度可溶的基于三苯胺和芴的D—A型高分子信息存储材料PFTD（Poly{[4，4L（4．4’-（9H—fluorene一9，9-diyl）bis（4，1-phenylene））bis（oxy）diphthalonitrile][triphe—nylamine]E9，9-dioctyl-9H—fluorene]}）。随着溶剂极性的增加，荧光强度逐渐减弱，荧光发射谱带变宽且发生红移，最大发射峰分别位于426nm（甲苯），432nm（四氢呋喃），r142nm（苯腈），445nm（N，N-二甲基甲酰胺）。PFTD在THF稀溶液中的绝对荧光量子效率为47．8％，由于固体时强的荧光淬灭效应，旋涂在石英玻璃片上的薄膜绝对荧光量子效率仅为5．5％。通过电化学实验估算得到的HOMO、LUMO、能隙、离子化势和电子亲和势分别为-5．43、-2．62、2．81、5．69、2．88eV。由该聚合物制备的薄膜器件（器件结构：ITO／PFTD／A1）表现出典型的一次写入、多次读出（WORM）型记忆特性，电流开关比大于10^4，开启电压为-1．5V。     

Fully transparent nonvolatile resistive polymer memory

We present a fully transparent nonvolatile resistive polymer memory device based on an anthracene‐containing partially aliphatic polyimide along with indium tin oxide (ITO) top and bottom electrodes. High transmittance of over 90% in the wavelength range of 400 to 800 nm is accomplished with an ITO/polyimide/ITO/glass device. The device shows unipolar write‐once‐read‐many times (WORM) memory behavior with an ON/OFF current ratio of ～2 × 10³, and the ratio remained without any significant degradation for over 10⁴ s. The memory behavior of the device is considered to be governed by trap‐controlled space‐charge limited conduction (SCLC) and local filament formation. Based on molecular simulation of the polyimide, the location of energy states is different from that in the conventional charge transfer (CT) mechanism. Despite the relatively low ON/OFF current ratio, our results can give insight into the development of fully transparent memory device. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 918–925     

The effect of top contact on ZnO write‐once–read‐many‐times memory

Write‐once–read‐many‐times memory (WORM) devices were fabricated using Ti/Au and Au as top contacts on ZnO thin films on Si. Electrical characterization shows that both types of WORM devices have large resistance OFF/ON ratio (R ratio), small resistance distribution range, long retention and good endurance. WORM devices with Au top contact have better performance of higher R ratio because of a larger work function of Au compared to Ti.

     

Nonvolatile WORM memory devices based on polymethacrylate with azoanthraquinone group

A novel polymethacrylate containing azoanthraquinone chromophore in the side chain(PMAzoaq6) was synthesized and characterized.An electronic memory device having the indium-tin oxide(ITO)/PMAzoaq6/Al sandwich structure was fabricated and its electrical bistability was investigated.The as-fabricated device was initially found to be at the OFF state and the switching threshold voltage was 1.5 V.After undergoing the OFF-to-ON transition,the device maintains the high conducting state(ON state) even after turnin...