Quo Vadis total reflection X-ray fluorescence?

The multielement trace analytical method ‘total reflection X-ray fluorescence’ (TXRF) has become a successfully established method in the semiconductor industry, particularly, in the ultra trace element analysis of silicon wafer surfaces. TXRF applications can fulfill general industrial requirements on daily routine of monitoring wafer cleanliness up to 300 mm diameter under cleanroom conditions. Nowadays, TXRF and hyphenated TXRF methods such as ‘vapor phase decomposition (VPD)-TXRF’, i.e. TXRF with a preceding surface and acid digestion and preconcentration procedure, are automated routine techniques (‘wafer surface preparation system’, WSPS). A linear range from 10⁸ to 10¹⁴ [atoms/cm²] for some elements is regularly controlled. Instrument uptime is higher than 90%. The method is not tedious and can automatically be operated for 24 h/7 days. Elements such as S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Br, Sn, Sb, Ba and Pb are included in the software for standard peak search. The detection limits of recovered elements are between 1×10¹¹ and 1×10⁷ [atoms/cm²] depending upon X-ray excitation energy and the element of interest. For the determination of low Z elements, i.e. Na, Al and Mg, TXRF has also been extended but its implementation for routine analysis needs further research. At present, VPD-TXRF determination of light elements is viable in a range of 10⁹ [atoms/cm²]. Novel detectors such as silicon drift detectors (SDD) with an active area of 5 mm², 10 mm² or 20 mm², respectively, and multi-array detectors forming up to 70 mm² are commercially available. The first SDD with 100 mm² (!) area and integrated backside FET is working under laboratory conditions. Applications of and comparison with ICP-MS, HR-ICP-MS and SR-TXRF, an extension of TXRF capabilities with an extremely powerful energy source, are also reported.     

VPD技术在光电产品总体设计中的应用

从系统工程方法出发，叙述了在光电系统开发的设计阶段采用VPD（Virtual Product Development）技术实现光电产品全数字化拟实平台的方法和过程。     

Ion chromatographic separations of phosphorus species: a review

The aim of this paper is to review recent literature regarding the determination of phosphorus species by ion chromatography (IC), and describe the implementation of new developments in sample treatment and ion chromatography methodology for the analysis of these compounds. Ion-exchange methods using both carbonate/hydrogencarbonate and hydroxide selective columns in combination with self-regenerating membrane and solid-phase-based suppressors enable determination of phosphate down to ppb levels. New technology, particularly on-line electrolytic hydroxide generators and electrolytic self-regenerating suppressor devices, has allowed the use of elution gradients in both carbonate/hydrogencarbonate and hydroxide selective systems, improving sensitivity and reducing total analysis time for samples containing phosphate together with other inorganic anions. In addition to a review of these developments, optimization and application of chromatographic methods using reversed stationary phases and cationic and/or zwitterionic surfactants is also discussed.The objective of most of the IC methods developed for phosphorus species is the determination of phosphate and total phosphorus. Therefore, sample treatment and separation conditions specifically developed for this purpose are also described. In addition, application of IC to the analysis of other inorganic (reduced and condensed) and organic (phytates, alkyl phosphate, and phosphonates) phosphorus species is discussed along with methodology and relevant applications in water analysis and other miscellaneous fields.     

Quantification issues of trace metals analysis on silicon oxide and nitride films by using VPD‐ICP‐MS and VPD‐GF‐AAS

Vapor phase decomposition (VPD) is a pretreatment technique for collecting trace metal contaminants on the surface of a Si wafer. Such trace metals can be identified and quantified by inductively coupled plasma mass spectrometry (ICP‐MS) or graphite furnace atomic absorption spectroscopy (GF‐AAS). However, the analytical results can be influenced by the Si‐matrix in the VPD samples. This article discusses the approaches to eliminate the interference caused by Si‐matrix. When the thickness of oxide film on wafer surface is less than 100 Å, the quantification results of ICP‐MS analysis will not be affected by Si‐matrix in the VPD samples. Except this, the Si‐matrix must be removed before analysis. An improved heating pretreatment approach has been adopted successfully to eliminate the Si‐matrix. For GF‐AAS analysis, the Si‐matrix will influence the sodium and aluminum analyses. Adding HNO₃ to the graphite furnace tubing after sample injection could also eliminate the interference caused by the Si‐matrix. The method detection limits (MDLs) of VPD‐GF‐AAS and VPD‐ICP‐MS range from 0.04 to 0.55 × 10¹⁰ atoms cm^?2 and 0.05 to 1.73 × 10⁹ atoms cm^?2, respectively. Copyright © 2008 John Wiley & Sons, Ltd.     

系统工程方法和价值准则在光电产品设计中的运用

 以系统工程方法论述光电产品技术设计的特征、内容及方法,阐明基于价值准则的优化设计分析决策法,叙述在光电系统开发设计阶段采用VPD(Virtual Product Development)技术实现光电产品全数字化拟实平台的方法和过程。在开发某光电跟踪测量产品中立足于系统工程方法结合VPD技术,使设计师利用模型与仿真技术可获得产品的概念形成、设计、制造到实现全过程的三维可视和可交互的产品集成开发环境。通过将VPD与实践经验相结合,并以数字化主模型为依托,开发出“屏幕样机”,进而对其展开动力学模型辨识等仿真试验,实现了从过去的经验设计方式跨越到预测设计方式,完成了虚拟制造驱动设计全过程。     

Comparison of direct-total-reflection X-ray fluorescence,sweeping-total-reflection X-ray fluorescence and vapor phase decomposition-total-reflection X-ray fluorescence applied to the characterization of metallic contamination on semiconductor wafers

The issues related to the matching between the 3 modes of Total-reflection X-Ray Fluorescence available on the latest generation of commercial equipment: Direct-Total-reflection X-Ray Fluorescence, Sweeping-Total-reflection X-Ray Fluorescence and Vapor Phase Decomposition-Total-reflection X-Ray Fluorescence, are discussed for quantitative analysis of metallic contamination on Si wafers. Direct-Total-reflection X-Ray Fluorescence and Sweeping-Total-reflection X-Ray Fluorescence agrees very well (+/− 20% for light elements, transition metals and heavy metals), but due to a poor surface coverage with Direct-Total-reflection X-Ray Fluorescence, the matching is correct on a whole wafer only for uniform contaminations. Vapor Phase Decomposition-Total-reflection X-Ray Fluorescence might agree with other Total-reflection X-Ray Fluorescence modes only if the collection of contaminants following the oxide decomposition step is 100% completed. This is not achieved for 2 situations: noble metals which plate on bare Si, and solid particles partially digested during the Vapor Phase Decomposition and collection protocol. Furthermore, even if the collection of contaminants is well completed, quantification after Vapor Phase Decomposition depends on the shape of the dried residues and the Total-reflection X-Ray Fluorescence incident angle. With the incident angle selected to maximize the signal to noise ratio for ultra trace applications, i.e. about 0.5 times the Si critical angle, an increase of the quantification by a factor up to 10 is often seen after Vapor Phase Decomposition because of particle-like shape of the metals against film-like shape for the initial distribution. Taking into account advantages and drawbacks of each Total-reflection X-Ray Fluorescence mode, a proposal for the use of Total-reflection X-Ray Fluorescence in advanced Integrated Circuit manufacturing is given and illustrated by practical results from a R&D pilot line and a mass production plant.     

Development of vapor phase decomposition-total-reflection X-ray fluorescence spectrometer

A total reflection X-ray fluorescence spectrometer integrated with vapor phase decomposition, VPD-TXRF, was newly developed. This instrument was designed to achieve a minimum footprint, to avoid cross contamination during operation, and to protect people and instruments from HF gas. Comparisons between analysis by VPD-TXRF and by atomic absorption spectrometry (AAS) indicated very good agreement in a wide range, from 10⁸ to 10¹² atoms/cm². The lower limits of detection (LLDs) were improved by two orders of magnitude compared with straight TXRF. For 300-mm Si wafers, the LLDs were 5×10⁸ atoms/cm² and 1×10⁷ atoms/cm² for Al and Ni, respectively. VPD-TXRF was able to perform ultra-trace analysis at the level of 10⁸ atoms/cm².     

Total-reflection X-ray fluorescence analysis for semiconductor process characterization

Semiconductor process characterization techniques based on total-reflection X-ray fluorescence (TXRF) analysis are reviewed and discussed. One of the most critical factors in obtaining reliable determinations by TXRF is the reliability of the standard samples that are used. Conventional physisorption standard samples such as spin coat wafers have two potential drawbacks: reproducibility of depth profile and stability. A method of chemisorption called ‘immersion in alkaline hydrogen peroxide solution (IAP)’ was proposed that provides answers to these two problems. IAP standard samples were used to experimentally examine three methods of TXRF application: Straight-TXRF, VPD-TXRF, and Sweeping-TXRF. In the application of Straight-TXRF, the linearity of Cu at a level of 10⁹ atoms cm⁻² is examined. In the application of VPD-TXRF, test results of VPD-TXRF for both transition metals and light elements are shown. Finally, a new measurement protocol called Sweeping-TXRF is proposed to conduct whole-surface analysis without chemical preconcentration.     

Summary of ISO/TC 201 Standard: XIX ISO 17331:2004—Surface chemical analysis—Chemical methods for the collection of elements from the surface of silicon‐wafer working reference materials and their determination by total‐reflection x‐ray fluorescence (TXRF) spectroscopy

This international standard specifies chemical methods for the collection of iron and/or nickel from the surface of silicon‐wafer working reference materials by the vapour‐phase decomposition method or the direct acid droplet decomposition method. The determination of the elements collected may be carried out by total‐reflection x‐ray fluorescence spectroscopy, as well as by graphite‐furnace atomic absorption spectroscopy or inductively coupled plasma mass spectroscopy. This international standard applies to iron and/or nickel atomic surface densities from 6 × 10⁹ to 5 × 10¹¹ atoms cm^?2. Copyright © 2005 John Wiley & Sons, Ltd.