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Shan Li Fengxian Bai Ruifang Wang Chen Chen Xiaofang Li Feng Cao Bo Yu Jiehe Sui Xingjun Liu Zhifeng Ren Qian Zhang 《Annalen der Physik》2020,532(11):1900440
The 19-electron VCoSb compounds are actually composites of an off-stoichiometric half-Heusler phase and impurities. Here the compositional adjustment is systematically studied in V1−xCoSb to obtain single-phase V0.955CoSb. Hall measurements suggest that such a V vacancy, as well as Ti doping, can optimize the carrier concentration, which decreases from ≈11.3 × 1021 cm−3 for VCoSb to ≈6.3 × 1021 cm−3 for V0.755Ti0.2CoSb. Low sound velocity contributes to the intrinsically low lattice thermal conductivity for VCoSb-based materials. The high Ti-dopant content results in enhanced point-defect scattering, which further decreases the lattice thermal conductivity. Finally, the optimized n-type V0.855Ti0.1CoSb is found to reach a peak ZT of ≈0.7 at 973 K. The work demonstrates that the VCoSb-based half-Heuslers are promising thermoelectric materials. 相似文献
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