Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

Microstructural stability and age-hardening behavior of Re-added dual two-phase Ni3Al and Ni3V intermetallic alloys

The effect of Re addition on the microstructure and hardening behaviour of the dual two-phase Ni₃Al (L1₂) and Ni₃V (D0₂₂) intermetallic alloy was investigated by scanning electron microscopy, transmission electron microscopy and Vickers hardness test. The two-phase eutectoid microstructure accompanying the Re-rich precipitates were observed in the channel region of the alloys in which Re substituted for Ni but not in those in which Re substituted for Al and V. The concomitant addition of Nb (or Ta) with Re more stabilized the two-phase eutectoid microstructure and consequently more induced the fine precipitates in the channel region. The annealing at temperatures below the eutectoid temperature was necessary to induce the fine precipitates in the channel region and thereby result in the precipitation hardening. The fine precipitation in the channel region and related hardening was attributed to the alloying feature so that Re is soluble in the A1 (fcc) phase at high temperatures and becomes less soluble in the two intermetallic phases decomposed from the A1 phase at low temperatures.     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

Ultrafast softening in InMnAs

We have used two-color time-resolved magneto-optical Kerr effect spectroscopy to manipulate and detect dynamic processes of spin/magnetic order in a ferromagnetic semiconductor InMnAs. We observed ultrafast photo-induced “softening” (i.e., transient decrease of coercivity) due to spin-polarized transient carriers. This transient softening persists only during the carrier lifetime (2 ps) and returns to its original value as soon as the carriers recombine to disappear. Our data clearly demonstrates that magnetic properties, e.g., coercivity, can be strongly and reversibly modified in an ultrafast manner. We attribute the origin of this unusual phenomenon to carrier-mediated ferromagnetic exchange interactions between Mn ions. We discuss the dependence of data on the pump polarization, pump intensity, and sample temperature. Our observation opens up new possibilities for ultrafast optical manipulation of ferromagnetic order as well as providing a new avenue for studying the dynamics of long-range collective order in strongly correlated many-body systems.     

UP-conversion of terahertz radiation induced by photon drag effect

An all-optical approach to convert terahertz radiation (THz, wavelength λ₁) into infrared (IR, peak wavelength λ₂) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm²) show that this up-conversion process (with λ₁/λ₂>10²) can be observed with a conventional thermal imaging camera.     

(Nd_(1-x)Er_x)_2Co_(15.5)V_(1.5)的结构转变与磁性

利用电弧熔炼制备了 (Nd1 xErx) 2 Co1 5 5V1 5(x=0— 1 0 )化合物样品 .通过x射线衍射分析和磁性测量研究了Er替代Nd2 Co1 5 5V1 5中的Nd时对化合物结构和磁性的影响 .研究结果表明 ,低Er含量 (x <0 4 ) ,化合物为Th2 Zn1 7型结构 ;高Er含量时 (x >0 5 ) ,化合物转变为Th2 Ni1 7结构 ;Er含量为x =0 4和 0 5时 ,两种结构共存 .两种结构的晶胞参数a ,c和晶胞体积V随着Er含量的增加都呈现递减的趋势 .随着Er含量的增加 ,(Nd1 xErx) 2 Co1 5 5V1 5化合物的居里温度和饱和磁化强度都单调下降 .(Nd1 xErx) 2 Co1 5 5V1 5化合物的室温各向异性由低Er含量时的易锥型转变为高Er含量时的易轴型 .x =0— 0 5的化合物在温度升高时发生自旋重取向转变 ,自旋重取向温度Tsr随Er含量的增加而减小     

Hydrothermal Synthesis and Characterization of a Novel Two-dimensional Framework Materials Constructed from Polyoxometalate and Coordination Groups: [H_2Mo_(5.5)V_(10.5)O_(40)(PO_4)][Cu(en)_2]_4·7H_2O

IntroductionPolyoxometalatesarewidelystudiedfortheirin terestingapplicationsincatalysis ,electronicconduc tivity ,magnetism ,nonlinearopticsandmedicine[1— 4 ] .Whilethemechanismofthesynthesisofpolyoxometalatesremainselusiveandisoftende scribedasself assembly ,thereseemstobeanincreas inguseofthecombinationofthehydrothermalmethodandthestructure directingtemplate .There searchwiththismethodhasdemonstratedthatanum beroftransitionmetaloxides ,typicallyreducedmolybdenumoxides ,mixedvalancevanadiumo…     

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.     

Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature.     

Photoelectron spectroscopic study of Li oxides on Li over-deposited V2O5 thin film surfaces

The Li oxides species formed on Li over-deposited V₂O₅ thin film surfaces have been studied by using X-ray and UV induced photoelectron spectroscopy (XPS and UPS). The photoelectron spectroscopic data show that the Li over-deposited V₂O₅ system itself is not stable. Further chemical decomposition reactions are taken place even under UHV conditions and lead to form Li₂O and Li₂O₂ compounds on the surface. The formation of Li₂O₂ causes to arise an emission line at about 11.3 eV in the valence band spectra.