On the energy-dependent number of electronic states in a quantum-well laser diode under a perpendicular magnetic field

The number of electronic states in a quantum-well laser diode under a perpendicular, uniform and time-independent magnetic field is considered as a function of the electronic energy. Within this framework, the energy-averaged number of states is calculated over a suitable energy range. In particular, an expression for the above average number is given when the magnetic field is relatively weak and the devices are assumed to be quasi-one-dimensional.     

Simultaneous effects of hydrostatic pressure and electric field on impurity binding energy and polarizability in coupled InAs/GaAs quantum wires

This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. Calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a non-linear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum-well wires.     

Deforming and moving a vortex by the tip of a magnetic force microscope

Recent experiments [O.M. Auslaender et al., Nat. Phys. 5 (2009) 35] use a magnetic force microscope not only to image but also to move and deform an individual vortex line in a bulk YBCO type-II superconductor. The theory of this experiment is presented accounting for pinning and curving of the vortex and for the full three-dimensional anisotropy of pinning and of vortex line tension in this material.     

The dynamics of disordered systems and the motion of vortices in disordered type-II superconductors

We develop a field theoretical method which permits us to study the dynamics of interacting particles in disordered systems. In particular, making use of a Hartree-type approximation, we obtain a self-consistent system of equations for disorder averaged quantities. The method is first applied to a single particle on a rough surface. Then, we calculate the current-voltage (I-V) characteristics of a type-II superconductor in the flux flow regime. Finally, the structure of the steps is discussed which arise in the I-V-characteristics when a small ac field is superimposed on the constant voltage. These may serve as a probe for incipient melting of the vortex lattice.     

The limitimg behaviour of the well width of a quantum two-dimensional metal–insulator transition

Metal–Insulator transition using an exact two-dimensional (2D) dielectric function is investigated for a shallow donor in an isolated well of a GaAs/Ga_1−xAl_sAs superlattice system within the effective mass approximation. Vanishing of the donor ionization energy as a function of well width and the donor concentration suggests that a phase transition is not possible even below a well width of 10 Å, supporting the scaling theory of localization. The effects of Anderson localization, exchange and correlation in the Hubbard model are included in a simple way. The relationship between the present model and the Mott criterion in terms of Hubbard model is also brought out. The critical concentration appears to be enhanced when a random distribution of impurities is considered. The limiting behaviour of the well width for a quantum 2D well is brought out. A simple expression is derived for a Mott constant in 2D, a*N_c^1/2 exp (9.86 exp (−L/a*))=0.123, where N_c is the critical concentration per area. Results are compared with the existing data available and discussed in the light of existing literature.     

Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (1 1 8) surface

In this paper, we present a photoluminescence (PL) study of Si/Ge/SiGe/Si structures grown by gas source molecular beam epitaxy on an (1 1 8) undulated surface with various Ge coverage. Nucleation and growth of Ge films is obtained by the Stranski–Krastanov mechanism. The influence of the substrate orientation on the changeover 2D–3D growth mode is investigated. Furthermore, we show the use of growing an SiGe wetting layer to control the uniformity of the Ge island size. The PL signal related to the Ge islands is found to be highly dependent of the power excitation and is observed up to room temperature.     

基于截尾数据指数Pareto分布应力-强度模型的可靠性

在II型双截尾删失计划下，讨论了当系统被独立的随机施加指数Pareto （EP）压力时的系统可靠性问题.作者给出了系统可靠性参数的不同点估计和区间估计，其中点估计包括一致最小方差无偏估计（UMVUE）和最大似然估计（MLE）；区间估计包括精确置信区间，近似置信区间和bootstrap的区间估计.为了评价不同估计方法效果，作者提供数值模拟结果；最后提供了一个真实数据的分析结果来演示本文提出的方法.     

Photo-transformations of 6-chloro-3-propargyloxy-2-aryl-4-oxo-4H-1-benzopyran: 1,4-hydrogen abstraction in propargylethers

1,4-Biradicals generated in the Norrish type-II reactions of 3-propargyloxy-2-arylchromones lead to cyclic products involving the 2-aryl group. The formation and distribution of products varied with the nature of 2-aryl group.     

Experimental observation of lattice distortions due to a flux line lattice in niobium

A polarized neutron scattering investigation of the flux line lattice in the type-II superconductor niobium is reported. A modulation of the nuclear lattice has been detected, and the magnitude of the first Fourier component of the lattice distortion established relative to the magnitude of the magnetic scattering. This constitutes the first experimental observation of lattice distortions due to the presence of magnetic flux lines within the bulk of a type-II superconductor. Using a simple microscopic model the lattice distortion in niobium is estimated. A new mechanism is suggested for the coupling of the flux line lattice to the crystallographic lattice. The experimental technique opens up the possibility of investigating the microscopic mechanism of flux line - nuclear lattice interactions, in particular the pinning of flux lines within the bulk of a type-II superconductor. Received: 8 August 1997 / Accepted: 16 October 1997     

Type-II InAs/GaSb superlattices for very long wavelength infrared detectors

Type-II superlattices (SLs) can be designed for semiconductor band gaps as large as 400 meV down to semimetallic. This flexibility in design makes them an excellent candidate for infrared photodiodes with cut-off wavelengths beyond 15 μm. There are relatively few options for high-performance infrared detectors to cover wavelengths longer than 15 μm, especially for operating temperatures above 15 K. In the past few years, excellent results have been obtained on photoconductive and photodiode samples designed for infrared detection in the very long wavelength infrared (VLWIR) range (λ>15 μm). There is a variety of possible designs for these SLs which will produce the same narrow band gap by adjusting individual layer thicknesses, or indium content, in the InGaSb layer. Several of these different design options have been grown and characterized. These designs often require monolayer control per layer over hundreds of repeats in the SL. Photoresponse spectra for type-II SLs are compared to show how the design choices not only change the band gap but also the band structure, as reflected in features observed in the spectra. Theoretical modeling results are used to interpret the photoresponse spectra. SLs with cut-off wavelengths ranging from 15 to 25 μm are covered.