Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

The in-situ capacitance and dielectric properties of 25 MeV C⁴⁺ ion irradiated Ni/n-GaAs Schottky barrier diode (SBD) were studied at 100 kHz in the fluence range 5 × 10¹⁰ – 5 × 10¹³ ions/cm². The investigation shows reduction in capacitance and charge density with increase in ion fluence. Consequent changes were observed in other related parameters like conductance, dielectric constant, dielectric loss, loss tangent and electrical modulus. The results were interpreted in terms of generation of swift heavy ion induced acceptor trap states by electronic energy loss mechanism. Besides, the switch over characteristics of depletion to inversion regions in the CV plot reveals minority carrier recombination centers also. The dispersion and relaxation peaks observed in bias dependent dielectric plots were ascribed to the polarization and relaxation mechanism due to the interfacial trap states. The traps and recombination centers were found to alter the barrier characteristics of the fabricated SBD depending upon the ion fluence.     

Study on typical behavior of transient nature (I-t) and hysterisis nature of I–V characteristics of dye doped solid state thin film photoelectrochemical cell

In this present investigation, we describe the steady state current voltage (I–V) characteristic of Crystal violet dye dispersed solid state photoelectrochemical cell (PEC). Typical behavior of dark current-voltage characteristic by increasing and decreasing external bias voltage has a similar form like hysterisis in nature. Although we have already observed this hysterisis nature in case of both forward and reverse bias condition, yet it is clear that the reverse hysterisis curve is more prominent than forward hysterisis. In this paper, we are getting double values of current (I) for a single value voltage, which is also helpful to understand the charge transport process through disordered materials. As the bias increases, the distribution of traps depth, which is exponential in nature, changes toward order state (resulting increase in disordered parameter α) This means that as α increases, it tends to reach the most order state of material. When external bias voltage is at 3.5 V, the value of disorder parameter becomes 1, and when bias voltage is beyond 3.5 V, the diffusion comes enhanced in nature.     

Hyperfine structure and isotope shifts in the 5d6s2 a2D3/2--5d6s(a3D)6p z4F5/2 ° transition of Hf II

The hyperfine structure and isotope shifts of the transition between the 5d6s² a²D_3/2 ground state and the 5d6s(a³D)6p z⁴F_5/2 ^° excited state of singly ionized hafnium at \lambda=340 nm have been investigated by laser spectroscopy using a radio-frequency quadrupole ion trap. The magnetic dipole coupling constant A and electric quadrupole coupling constant B of the two atomic levels for both stable isotopes ¹⁷⁷Hf and ¹⁷⁹Hf are determined. The changes of mean square nuclear charge radii \delta[ r²] of the stable Hf isotopes and the radioactive isotope ¹⁷²Hf (T_1/2=1.87a) have been extracted from the data. This revised version was published online in August 2006 with corrections to the Cover Date.     

Optical and magnetic resonance spectroscopy of stimulated recombination processes in defect studies

Optical and magnetic resonance spectroscopy is widely used in the investigation of radiation-induced processes in wide-gap solids. This paper discusses the present understanding of applications of the experimental methods of optical and thermoactivation spectroscopy in the research of new materials, for applications in radiation dosimetry and digital imaging and in the basic research into the fundamental physics and chemistry of radiation. The advantages of the simultaneous use of optical and magnetic resonance techniques for the investigation of stimulated processes are considered.     

Eu2+掺杂Sr2SiO4长余辉材料的热释光研究

采用高温固相法在弱还原的气氛下合成了Sr2SiO4高亮度的黄色长余辉材料.通过X射线衍射(XRD)分析发现所制得的样品属于α'-Sr2 SiO4斜方品系结构;样品的光致发光特性表明,在320 nm激发光的照射下,出现峰位为490 nm的宽带发射峰.样品余辉特性显示:样品的余辉衰减曲线符合双指数衰减.在温度293～598...     

光电耦合器件闪烁噪声模型

对电应力前后光电耦合器件的闪烁噪声（1/f噪声）进行了实验和理论研究.实验发现,应力前后1/f噪声幅值随偏置电流均有相同的变化规律：在低电流区,1/f噪声幅值与偏置电流成正比,在高电流区,1/f噪声幅值与偏置电流的平方成正比,且应力后1/f噪声幅值增大了约7倍.理论分析表明,小电流时该器件的1/f噪声为扩散1/f噪声,大电流时为复合1/f噪声,应力在器件有源区诱生的陷阱是1/f噪声增大的根本原因.基于载流子数涨落和迁移率涨落机制,建立了一个光电耦合器件1/f噪声的定量分析模型,实验结果和模型符合良好.     

Luminescence studies of a combustion-synthesized blue–green BaAlxOy:Eu,Dy nanoparticles

Blue–green emitting BaAl_xO_y:Eu²⁺,Dy³⁺ phosphor was synthesized by the combustion method. The influence of various parameters on the structural, photoluminescence (PL) and thermoluminescence (TL) properties of the phosphor were investigated by various techniques. Phosphor nanocrystallites with high brightness were obtained without significantly changing the crystalline structure of the host. In the PL studies, broad-band excitation and emission spectra were observed with major peaks at 340 and 505 nm, respectively. The observed afterglow is ascribed to the generation of suitable traps due to the presence of the co-doped Dy³⁺ ions. Though generally broad, the peak structure of the TL glow curves obtained after irradiation with UV light was non-uniform with suggesting the contribution to afterglow from multiple events at the luminescent centers. Further insight on the afterglow behavior of the phosphor was deduced from TL decay results.     

New pecularities of the conductivity and photoconductivity mechanisms in β-rhombohedral boron

The development of the steady-state dc conductivity of β-rhombohedral boron requires large temperature-dependent time constants (for example τ ∼ 5 h at 425 K) and exhibits stochastic precipitous jumps, whose height depends on temperature as well. At low temperatures, these jumps are attributed to trapping and releasing of electrons. At high temperatures, considering the unsteady changes of numerous physical properties between 500 and 600 K, the results are explained by the diffusion of interstitial B atoms causing statistical fluctuation of conductivity paths below the percolation threshold. The time-dependent photoconductivity measured between 88 and 576 K for times up to 45 h is strongly influenced by traps reducing the lifetime of the initially generated electrons considerably. This changes, when the trap occupation increases because of persisting optical excitation. Though under final stationary conditions the concentration of conducting electrons is independent of time, the conductivity persists to change; depending on temperature it increases or decreases. This is probably due to the diffusion of interstitial B atoms as well.     

Radiation induced colour centers and damage in YAlO 3 :Ce and YAlO 3 :Ce,Zr scintillators

Radiation induced absorption spectra (irradiation up to 500 v Gy by 60 Co) and TSL of a set of YAP:Ce crystals co-doped by Zr 4+ were investigated. Positive effect of Zr 4+ co-doping was found, namely reduction of both the defect creation and presence of TSL active traps. Up to three absorption bands were observed in the radiation induced absorption spectra. They probably have different origin - from colour centers in the green part of the spectra to change of the Ce 3+ valency in the near UV.     

Time-differential perturbed angular correlation study of the electric field gradient in Ti2Rh MoSi2-type compound

At KVI the technical structures for the TRIμP facility are nearly all in place. The aim of the project is to use radioactive ions to study fundamental interactions and symmetries. We will measure β-recoil correlations in nuclear β decay. There the V,A structure of the Weak interaction may be violated. The second line of research is the search for a permanent electric dipole moment in Ra, with a magnitude forbidden by the Standard Model. By trapping these radioactive nuclei in atom traps a pure sample that can be manipulated facilitates these searches. The TRIμP facility consists of a production target and magnetic separator on the high energy side and a Radio-Frequency Quadrupole (RFQ) cooler and buncher on the low energy side. An ion catcher stops the fast product nuclides and transport them into the RFQ cooler. New technological approaches were implemented for several of these devices.