Fabrication and characterization of zinc oxide anti-reflective coating on flexible thin film microcrystalline silicon solar cell

This paper studies the fabrication and characterization of 80 nm zinc oxide anti-reflective coating (ARC) on flexible 1.3 μm thin film microcrystalline silicon (μc-Si) solar cell. High resolution X-ray diffraction (HR-XRD) shows a c-axis oriented ZnO (0 0 2) peak (hexagonal crystal structure) at 34.3° with full width at half maximum (FWHM) of 0.3936°. Atomic force microscope (AFM) measures high surface roughness root-mean-square (RMS) of the layer (50.76 nm) which suggests scattering of the incident light at the front surface of the solar cell. UV–vis spectrophotometer illustrates that ZnO ARC has optical transmittance of more than 80% in the visible and infra-red (IR) regions and corresponds to band gap (E_g) of 3.3 eV as derived from Tauc equation. Inclusion of ZnO ARC successfully suppresses surface reflectance from the cell to 2% (at 600 nm) due to refractive index grading between the Si and the ZnO besides quarter-wavelength (λ/4) destructive interference effect. The reduced reflectance and effective scattering effect of the incident light at the front side of the cell are believed to be the reasons why short-circuit current (I_sc) and efficiency (η) of the cell improve.     

Photocatalytic and optical properties of titanium dioxide thin films prepared by metalorganic chemical vapor deposition

Titanium dioxide thin films have been deposited by metalorganic chemical vapor deposition (MOCVD) over sodalime glass substrates at substrate temperatures ranging from 250 °C to 450 °C. The effect of deposition temperature on the structure and microstructure of the obtained films has been studied by x-rays diffraction (XRD) and scanning electron microscopy (SEM), respectively. Diffraction patterns show the existence of a pure anatase phase beside a texture change with the increase of deposition temperature. Micrographs show grain fragmentation with the increase in deposition temperature. UV–Vis. spectra have been recorded by spectrophotometery. The optical energy gap has been calculated for the deposited films from the spectrophotometrical data. Photocatalytic experiments have been carried out. The photocatalytic activity has been found to decrease with the increase in deposition temperature.     

利用非规整膜系实现宽角度入射减偏振、减反射薄膜的研究

利用非均匀膜系理论对宽角度入射减偏振、减反射薄膜进行优化设计,分析了在宽角度入射的情况下,偏振光产生透过率不同的原因,选取了Na3AlF6、Ta2O5和Al2O3三种不同折射率材料,采用BK7作为基底,模拟设计了光谱区在500～560 nm波段、入射角为0~70°之间的多层减偏振、减反射薄膜,设计结果表明,薄膜的透过率得到大幅度提高.     

氮化铝薄膜的光学性能

分别使用X衍射仪和紫外（190 nm～800 nm）分光光度仪,测量了用分子束外延法生长在SiC（001）基底面上的AIN薄膜的X衍射、透射谱和不同温度下的吸收谱.X衍射表明:实验所用的AIN薄膜在c-轴存在应变和应力,该应变和应力主要是由于AIN的晶格常量与基底SiC的晶格常量不匹配所致.透射谱表明:AIN薄膜的禁带宽度大约为6.2eV;而其对应的吸收谱在6.2eV处存在一个明显的台阶,此台阶被认为是AIN薄膜中的带边自由激子吸收所产生,忽略激子的结合能(与禁带宽度相比),则该值就对应为AIN的禁带宽度.而其对应的不同温度下（10 k～293 k）的吸收谱的谱线的形状和位置无明显的变化表明:温度对AIN薄膜的禁带宽度亦无明显的影响,这主要是由于在AIN薄膜中存在着应力所致.     

Effects of Sb doping on the structure and properties of SnO2 films

Transparent heat-insulating SnO₂ films were prepared on the glass substrate with sol-gel. The effects of Sb doping on the structure and photoelectric properties of the films were investigated. The films were characterized by scanning electron microscope (SEM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet–Visible-Near Infrared Spectrometer (UV-VIS-NIR) and Hall Effect tester. The results show that the doping of Sb did not change the basic crystal structure of the SnO₂ film, but reduced the crystallinity of the film. With the increase of Sb doping, the grain size decreases first and then maintains basically invariable. The sheet resistance of the film decreases first and then increases. The transmittance of the substrate glass coated with this film (hereinafter referred to as the film's transmittance) in the near-infrared region (780–2500 nm) decreases from 92.55% to 60.48%, and increases a little when the doping amount exceeded 11 mol%. And its transmittance of visible light (380–780 nm) fluctuated slightly between about 81% and 86%.     

Comparative study of optical analysis methods for thin films

Three popular optical analysis methods (the transfer-matrix method, the Tinkham formula, and Beer's law) have been used for analyzing the optical spectra of thin films. While the transfer-matrix method is an accurate method, the Tinkham formula and Beer's law are approximate methods. Here we investigated the three methods using measured transmittance spectra of insulating transition-metal dichalcogenide (TMD) thin films on a quartz substrate. Three different semiconducting 2H-TMD systems (MoS₂, MoSe₂, and MoTe₂) were measured and analyzed. The optical conductivities obtained from the measured transmittance spectra using the transfer-matrix method and Tinkham formula and the absorption coefficients obtained using the transfer-matrix method and Beer's law were compared. The comparisons show some discrepancies. The reasons for the discrepancies between the results obtained via the two different methods were examined and the application limitations of the Tinkham formula and Beer's law were discussed.     

基于Fibonacci序列准周期结构的小角度低通空间滤波器

利用常规材料构造了Fibonacci序列准周期结构,运用传输矩阵法研究了该结构的空间传输特性,并基于该结构优良的空间传输特性设计了小角度低通空间滤波器.数值模拟结果表明,该小角度空间滤波器的角域带宽可通过改变序列的结构类型和序列数来调谐,其调谐规律为:随着Fibonacci序列F(m,1)中m值的增加,对应空间滤波器的角域带宽减小;随着序列数的增大,对应角域带宽也减小.在调谐的基础上,还可通过改变构成准周期结构的介质折射率参量来精确调节其角域带宽.相比于基于超材料的小角度空间滤波器而言,基于Fibonacci序列的小角度空间滤波器制备更简单,且有望应用于新一代的高功率激光系统中.     

温度对AZO薄膜红外辐射性能的影响

随着全球资源的减少和环境的恶化,节能减排已成为人们关注的焦点,具有保温隔热功能的低辐射玻璃成为研究的热点。提高玻璃保温隔热性能最有效的方法就是在其表面涂覆低辐射率层。原材料丰富、导电性能好、可见光透过率高等优势使得Al掺杂ZnO (AZO)薄膜成为最具潜力的低辐射率层。系统研究了温度对AZO薄膜红外辐射性能的影响,分析了变化机理。首先研究了在一定的温度下持续一段时间后,AZO薄膜的红外比辐射率的变化情况。然后研究了在变温环境中红外比辐射率的变化情况。采用直流磁控溅射法在室温下玻璃基片上沉积500 nm厚的AZO薄膜,将薄膜放到马弗炉中进行热处理,在100～400 ℃空气气氛下保温1 h,随炉冷却。采用X射线衍射仪对AZO薄膜进行物相分析,采用扫描电子显微镜观察薄膜表面形貌变化。利用四探针测试法测量AZO薄膜的电阻率,采用红外比辐射率测试仪测试薄膜红外比辐射率, 可见分光光度计测量可见光谱。测试的结果表明,薄膜热处理前后均为六角纤锌矿结构,(002)择优取向。300 ℃及以下热处理1 h后,(002)衍射峰增强,半高宽变窄,晶粒尺寸长大。随着热处理温度的升高,薄膜的电阻率先减小后增大,200 ℃热处理后的薄膜具有最小的电阻率(0.9×10-3 Ω·cm)。热处理温度升高,晶粒长大使得薄膜电阻率降低。热处理温度过高,薄膜会从空气中吸收氧,电阻率下降。薄膜的红外比辐射率变化趋势和电阻率的一致,在200 ℃热处理后获得最小值(0.48)。自由电子对红外光子有较强的反射作用,当电阻率低,自由电子浓度高的时候,更多的红外光子被反射,红外辐射作用弱,红外比辐射率小。薄膜的可见光透过率随着热处理温度的升高先减小后增大,200 ℃热处理后的薄膜的可见光透过率最小,但仍高达82%。这种变化是由于自由电子浓度变化引起的,自由电子对可见光有很强的反射作用。选取未热处理和200 ℃热处理后的样品进行变温红外比辐射率的测量,将样品放在可加热的样品台上,位置固定,在室温到350 ℃的升温和降温过程中每隔25 ℃测量一次红外比辐射率,结果表明,在室温到350 ℃的温度范围内,AZO薄膜的红外比辐射率在升温过程中随着温度的上升而增大,在降温过程中减小,经过整个升、降温过程后,薄膜的红外比辐射率增大。     

Contours of constant Δ and Ψ in the 2–4 plane for the ellipsometric functions

Contour graphs of ₂ vs ₄ for different film thicknesses and a range of angles of incidence have been plotted for the ellipsometric functions Δ and Ψ in both the reflection and transmission modes. In the case of reflection ellipsometry, when the plots for Δ_R and Ψ_R are superimposed, the two sets of contours cross nearly at right angles over a large part of the field, this being indicative of the high accuracy obtainable in using this technique to determine ₄ and ₂ and hence the optical constants, n and k, for the film material. The reflection ellipsometric technique is accurate over angles of incidence between 30° and 75° and for a range of film thicknesses between λ/30 and 5λ. Transmission ellipsometry is less useful, due to anomalies in both X_s and X_p where sudden phase changes of ±π occur in regions of interest. There is also the possibility of multiple solutions, although the use of a multiangle technique would enable the “correct” values to be more easily determined.     

Nickel-oxide-based electrochromic films with optimized optical properties

Reactive DC magnetron sputtering was used to grow thin films of Ni (93%)-V (7%) oxide and Ni (62%)-Al (38%) oxide. Both films showed electrochromism in KOH. The addition of Al diminished the luminous absorbance significantly, while the charge capacity was maintained. The Al-containing films are superior to the conventional Ni oxide electrodes as regards applications requiring high-bleached-state transmittance.Presented at the 3rd International Meeting on Advanced Batteries and Accumulators, 16–20 June 2002, Brno, Czech Republic