Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation

In Single Gate HEMT (SGHEMT) shortening of gate length (_Lg)$\left(L_g\right)$ below 100 nm leads to reduction in Transconductance (_gm)$\left(g_m\right)$, which reduces the unloaded voltage gain (_gm/_gd)$(g_m/g_d)$ of the device, thereby reducing the maximum frequency of oscillation (_fmax)$\left(f_{max}\right)$. The main reason for this reduction in _gm$g_m$ with _Lg$L_g$ in the Single Gate HEMT (SGHEMT) is its inability to maintain the desired channel aspect ratio (α$\alpha$). At such a miniaturization level, α$\alpha$ not only depends on the channel depth (d)$\left(d\right)$ but also on the channel thickness (_dc)$\left(d_c\right)$ of the device [5]. Moreover, the variation of _dc$d_c$ may switch the device characteristics from quantum regime to classical regime  and . The Double Gate HEMT (DGHEMT)  and  has emerged as a solution for further reduction in _Lg$L_g$ and provides enhancements over SGHEMT by virtue of its double gate and also for same _dc$d_c$ due to double heterojunctions, which virtually increases the value of α$\alpha$. In the present work, extensive simulation work has been carried out using ATLAS device simulator [35] in order to study the effect of _dc$d_c$ and _Lg$L_g$ on DGHEMT and SGHEMT. An analytical model has also been proposed for SGHEMT and DGHEMT to incorporate the effect of variation of _dc$d_c$ and _Lg$L_g$.     

Organic Electrochemical Transistor Based on Hydrophobic Polymer Tuned by Ionic Gels

Hydrophobic conjugated polymers have poor ionic transport property, so hydrophilic side chains are often grafted for their application as organic electrochemical transistors (OECTs). However, this modification lowers their charge transport ability. Here, an ionic gel interfacial layer is applied to improve the ionic transport while retaining the charge transport ability of the polymers. By using the ionic gels comprising gel matrix and ionic liquids as the interfacial layers, the hydrophobic polymer achieves the OECT feature with high transconductance, low threshold voltage, high current on/off ratio, short switching time, and high operational stability. The working mechanism is also revealed. Moreover, the OECT performance can be tuned by varying the types and ratios of ionic gels. With the proposed ionic gel strategy, OECTs can be effectively realized with hydrophobic conjugated polymers.     

Modeling and analysis of fully strained and partially relaxed lattice mismatched AlGaN/GaN HEMT for high temperature applications

The paper presents an accurate charge control model for a fully strained (FS), and partially relaxed (PR) lattice mismatched AlGaN/GaN HEMT, taking into consideration the effect of spontaneous and piezoelectric polarization. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deterioration of the driving current. By using the variation of band gap with temperature, the temperature dependence on threshold voltage, sheet carrier concentration and drain current is studied. Further, the temperature variation shows the applicability of the device in a variable thermal environment. A close agreement of calculated data with simulated/experimental data proves the validity of the model.