Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

介孔网络电路

用二次阳极氧化法制备纳米多孔氧化铝板,然后用磁控溅射方式在纳米多孔氧化铝板表面镀金得到介孔网络电路,对该介孔网络电路进行输运测量,发现其具有非线性电阻.     

On removable even circuits in graphs

Let G be a connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G such that G−E(C) is either connected or contains precisely two components one of which is isomorphic to a 1-bond. We further prove sufficient conditions for there to exist an even circuit C in a 2-connected simple graph G such that G−E(C) is 2-connected. As a consequence of this, we obtain sufficient conditions for there to exist an even circuit C in a 2-connected graph G for which G−E(C) is 2-connected.     

UP-conversion of terahertz radiation induced by photon drag effect

An all-optical approach to convert terahertz radiation (THz, wavelength λ₁) into infrared (IR, peak wavelength λ₂) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm²) show that this up-conversion process (with λ₁/λ₂>10²) can be observed with a conventional thermal imaging camera.     

Upon the removal of the edges of a 1-factor from an even circuit in a 2-connected graph

Let G be a 2-connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G with factorization F={F₁,F₂} such that G−E(F₁) is 2-connected.     

Loss in a rectangular optical waveguide induced by the crossover of a second waveguide

We calculate the loss induced in a single-mode rectangular optical waveguide by the presence of a second waveguide, perpendicular to the first, which crosses over the first waveguide at a variable distance d. Our calculation is applied to the analysis of several doped silica waveguides of practical importance for optical circuit design.     

开关布局中本质不同的开关线路计算

通过对开关布局问题的研究，来解决一类象开关线路一样比较特殊，比较复杂的布局优化问题。从而寻找出这类问题的全局优化算法。本应用对称群对集合的作用，轨道，不动点等讨论了开关布局问题，给出了本质不同的开关线路个数的计算公式。     

Laser nanosources based on planar photonic crystals as new platforms for nanophotonic devices

Two-dimensional photonic crystal lasers have been fabricated on III–V semiconductor slabs. Tuning of the spontaneous emission in micro and nanocavities has been achieved by accurate control of the slab thickness. Different structures, some of them of new application to photonic crystal lasers, have been fabricated like the Suzuki-phase or the coupled-cavity ring-like resonators. Laser emission has been obtained by pulsed optical pumping. Optical characterization of the lasing modes have been performed showing one or more laser peaks centred around 1.55 μm. Far field characterization of the emission pattern has been realized showing different patterns depending on the geometrical shape of the structures. These kinds of devices may be used as efficient nanolaser sources for optical communications or optical sensors.     

THE FIRST EXPERIMENT OF A THz GYROTRON WITH A PULSE MAGNET

A THz gyrotron with a pulse magnet has been designed, constructed and operated in FIR FU. It is developed as one of high frequency gyrotrons included in Gyrotron FU Series. The gyrotron has already achieved the first experimental result for high frequency operations whose radiation frequency exceeds 1 THz. In this paper, the design detail and the operation test results for sub-terahertz to terahertz range are described. The second harmonic operation is confirmed experimentally at the expected frequency of 1.005 THz due to TE_6,11 cavity mode at the magnetic field intensity of 19.0 T.     

Broadband Analysis of Holographic Power Combining Circuits

Holography is a promising technique for power combining applications in the frequency range of short millimeter and submillimeter waves. In this paper, quasi-optical holographic power combining circuits are investigated. An equivalent network is utilized which rigorously models horn arrays and biperiodic dielectric structures in order to design computer-generated holograms. We apply the network model to a 5-element quasi-optical power combiner and demonstrate its capability. The hologram is designed for 150 GHz and has an efficiency of 92.5 % with a 90 % bandwidth of 5.3 %. With the aid of a broadband waveguide power divider and a vector field measurement system, the circuit is analyzed.