Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)

It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F₂, 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ=1.2±0.1 ns for the range of temperatures 16-150 K. The blue band decay possesses fast and slow components. The fast component of the blue band decay is about 1.2 ns. The slow component of the blue band well corresponds to exponent with time constant equal to 17±1 μs within the temperature range 16-200 K. deviations from exponential decay were observed as well and explained by influence of nearest interstitial OH groups on the luminescence center. The UV band was not detected for F₂ laser excitation. For the case of KrF laser only a structure less tail up to 4.6 eV was detected. Both the UV and the blue bands were also found in recombination process with two components having characteristic time about 1 and 60 μs. For blue band recombination luminescence decay is lasting to ms range of time with power law decay ∼t⁻¹.For the case of X-ray excitation the luminescence intensity exhibits strong drop down above 100 K. such an effect does not take place in the case of photoexcitation with lasers. The activation energies for both cases are different as well. Average value of that is 0.03±0.01 eV for the case of X-ray luminescence and it is 0.15±0.05 eV for the case of PL. So, the processes of thermal quenching are different for these kinds of excitation and, probably, are related to interaction of the luminescence center with OH groups.Stishovite crystal irradiated with pulses of electron beam (270 kV, 200 A, 10 ns) demonstrates a decrease of luminescence intensity excited with X-ray. So, irradiation with electron beam shows on destruction of luminescent defects.The nature of luminescence excited in the transparency range of stishovite is ascribed to a defect existing in the crystal after growth. Similarity of the stishovite luminescence with that of oxygen deficient silica glass and induced by radiation luminescence of α-quartz crystal presumes similar nature of centers in those materials.     

Optically stimulated luminescence (OSL) study of synthetic stishovite

Optically stimulated luminescence (OSL) of synthetic stishovite was investigated for a future dating technique of meteor impact craters. Luminescence around 330 nm was measured on the γ-ray irradiated stishovite under two stimulating light sources of infrared laser (830 nm) and blue light emitting diode set (470 nm). Thermoluminescence (TL) studies before and after the OSL measurements showed the intensities around 100–200°C and 220–350°C to increase and those around 350–450°C to decrease. This indicates that a part of deep-trapped charges excited during the OSL measurements were retrapped by shallower traps. The infrared stimulated luminescence (IRSL) after the TL measurement up to 450°C could not be detected, while the blue light stimulated luminescence (BLSL) after TL had about one-tenth of the intensity before TL. This indicates that a part of the charges in shallower traps were detrapped thermally and returned to the deeper traps which were related to BLSL. The result implies that some of the BLSL-related traps are quite stable at room temperature and could be used for geological dating. In addition, two paramagnetic centers produced by sudden release of high pressure in synthesis process were found in the unirradiated stishovite by electron spin resonance (ESR). Their g-factors are g=2.00181 and g=2.00062 for an axial signal and g=2.00305 for the other isotropic signal. These signals could be used for an evidence of impacts if those signals could be stored in geological time.     

Memoir on the discovery of high-density silica

Abstract

The first synthesis of stishovite, a high-density form of silica, is described by the author, Sergei Stishov. Stishov was a graduate student at Moscow State University in geochemistry in the period 1960–1962, and developed an interest in the problem of the interior of the Earth and its constituents. He decided to look for the high-pressure phase of silica predicted by Francis Birch in 1952. Stishov was able to perform experiments with a high-pressure apparatus at the Institute of High-pressure Physics in Moscow, and in 1961 he obtained the new phase. The scientific politics that followed included attempts by others to take credit for Stishov's discovery, controversy over the naming of the new phase, and Stishov's eventual separation from the Institute. An epilogue and some material of historical interest are appended.