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1.
In this paper, an accurate model of the spin-coating process is presented and investigated from the analytical point of view. More precisely, the spin-coating process is being described as a one-phase free boundary value problem for Newtonian fluids subject to surface tension and rotational effects. It is proved that for T > 0 there exists a unique, strong solution to this problem in (0, T) belonging to a certain regularity class provided the data and the speed of rotation are small enough in suitable norms. The strategy of the proof is based on a transformation of the free boundary value problem to a quasilinear evolution equation on a fixed domain. The keypoint for solving the latter equation is the so-called maximal regularity approach. In order to pursue in this direction one needs to determine the precise regularity classes for the associated inhomogeneous linearized equations. This is being achieved by applying the Newton polygon method to the boundary symbol.  相似文献   
2.
The effects of the spin coating process parameters on the thickness of the SiOx layer of the BOPP/SiOx composite film were investigated. When the concentration of tetraethoxysilane (TEOS) increased from 12.5 vol% to 55% vol%, the SiOx thickness increased from about 80 nm to 470 nm. In the sol time range of 1.5 h to 5 h the SiOx layer thickness reached a maximum at about 4 h and the change of the thickness roughly matched the change of the silica colloidal sphere sizes in sol. When the spin-coating speed of the dispensing stage increased from 450 r/min to 500 r/min, the SiOx layer thickness drastically decreased from about 1.67 μm to 400 nm. While the spin-coating speed of the thinning and drying stage went up to 1200 r/min, the SiOx layer thickness was in the range of 330 nm to 390 nm. It was also found that the SiOx layer thickness was almost increased linearly from about 500 nm to 1.02 μm with the ratio of the commercial silica colloidal to the TEOS from 0.2 to 1.0. The water contact angles decreased to about 23.0° for the BOPP/Si-Sol composite film with 1.67 μm SiOx layer and about 4.0° for the BOPP/mixing Si-Sol composite film with 1.02 μm SiOx layer. Compared to BOPP, the light transparency of the BOPP/Si-Sol composite films decreased by about 5.5% with the SiOx layer from about 80 nm to 1.67 μm and by 7.0% for the BOPP/mixing Si-Sol composite film with the SiOx layer from about 350 nm to 1.02 μm respectively.  相似文献   
3.
The template synthesis of ethylenediamine ( 1 ) with 2-acetylcyclopentanone ( 2 ) and [Cu(OAc)2 · H2O] ( 5 ) produced [Cu(1-(2-cC5H6(O))C(Me)NCH2)2)] ( 6 ) in 82 % yield. Reaction of 5 with bis(benzoylacetone)diethylenetriamine ( 7 , = L H)[1] gave [Cu(μ-OAc)( L )(H2O)]2 ( 8 ). The solid-state structures of 6 and 8 were determined confirming that 8 possesses intra- and intermolecular hydrogen bonds resulting in a dimer formation. The thermal behavior of 6 – 8 was studied by TG and TG-MS. Under oxygen CuO was formed, whereas under Ar Cu/Cu2O ( 6 ) or Cu ( 8 ) was obtained. Complex 6 was used as CVD precursor for Cu and Cu-oxide deposition (substrate temp., 400–500 °C, N2, 60 mL · min–1; O2, 60 mL · min–1; pressure, 0.87–1.5 mbar). The as-obtained deposits show separated particles of different appearance at the substrate surface as evidenced by SEM. Non-volatile 8 was applied as spin-coating precursor for Cu and CuO formation [conc. 0.25 mol · L–1; volume 0.2 mL; 3000 rpm; depos. time 2 min; heating rate 50 K · min–1; holding time 60 min (Ar), 120 min (air) at 800 °C]. The samples on silicon consist of granulated particles (Ar) or are non-dense with a grainy topography (air). EDX and XPS measurements confirmed the formation of Cu (Ar) or CuO (O2) with up to 13 mol-% C impurity.  相似文献   
4.
In this work,we propose a new spin-coating method coupling with high thermal decomposition,to prepare the tin-antimony(Sn-Sb) oxide electrode.The character of the spin-coating electrode was compared with the dip-coating electrode through X-ray diffraction(XRD),scanning electron microscopy(SEM),accelerated life test,cyclic voltammetry,and electrolytic degradability. The results showed that the spin-coating electrode had a better defined crystal form,a smoother and more compact surface than that of the dip-coating electrode.Service time of the spin-coating electrode was determined to be longer than 15 h,and it was less than 2 min for the dip-coating electrode.Electrochemical characterization analysis showed that the electrolytic degradability of the spin-coating electrode is better than that of the dip-coating electrode.  相似文献   
5.
Ordered mesoporous silica thin films have been prepared on silicon substrates by spin-coating technique using poly(alkaline oxide) triblock copolymers EO20PO70EO20 (P123) as structure-directing agent. The X-ray diffraction and transmission electron microscopy investigations show that the obtained mesoporous silica thin films have an ordered pore array structure in nanoscale. The atomic force microscopy analysis reveals that the obtained mesoporous silica thin films exhibit a tile arrangement structure in micron scale.  相似文献   
6.
在硅基探测器的入射窗上制备荧光下转换薄膜,是一种有效降低成本的紫外荧光增强技术。从理论上探讨了由聚二甲基硅氧烷与颜料黄101混合胶体的紫外荧光薄膜旋涂工艺参数与性能之间关系,搭建紫外荧光薄膜应用于光谱分析的性能测试实验平台,对紫外荧光增强薄膜旋涂工艺参数质量配比、旋涂转速进行优化。光谱分析探测器有两个主要指标,光谱响应灵敏度和光谱分辨率,分析与实验结果表明,利用旋涂法制备紫外增强荧光薄膜,旋涂转速将直接影响薄膜的厚度、表面粗糙度和荧光物质的分布,从而影响光谱分析系统的分辨率;紫外荧光增强薄膜的增强效率与荧光溶剂聚二甲基硅氧烷与荧光物质颜料黄101的质量比密切相关,质量比低无法满足对紫外响应效率的提高,但高质量比,荧光物质处在聚集态荧光自猝灭严重,也不利于增强薄膜的紫外响应效率。最终,在薄膜旋涂工艺优化的基础上,旋涂转速2 500~3 000 r·min-1,荧光物质与荧光溶剂质量比为7∶100制备出紫外荧光增强薄膜。汞灯特征光谱测试结果表明该薄膜313 nm紫外波长处探测响应灵敏度提高了1.6倍左右,对比分析镀膜前后特征光谱的半波带宽,镀制紫外增强荧光薄膜对其影响很小。  相似文献   
7.
Single-step sol–gel deposition was attempted for realizing submicron thick, (001) oriented Pb(Zr0.53Ti0.47)O3 (PZT) thin films, using an alkoxide solution containing polyvinylpyrrolidone (PVP). A solution of molar composition, Pb(NO3)2:Zr(OC3H7 n)4:Ti(OC3H7 i)4:PVP:H2O:CH3COCH2COCH3:CH3OC2H4OH:C3H7 nOH = 1.1:0.53:0.47:0.5:5:0.5:22:0.98, was prepared as a coating solution. Gel films were prepared on Pt(111)/TiO2/SiO2/Si(100) substrates by spin-coating, and calcined at 350 °C and annealed at 650 °C either in an electric furnace or in a near-infrared (IR) furnace. When calcined in the near-IR furnace, the films became (001) oriented on annealing. When calcined in the electric furnace, on the other hand, the films became randomly oriented on annealing. These observations indicate that the heating the gel films from the substrate side in the calcination step at 350 °C induces crystallographic orientation in the annealing step at 650 °C. The effects of the heating methods on the thermal decomposition of the gel films, and the microstructure and dielectric properties of the fired films were studied. Finally 0.4 μm thick, (001) oriented PZT films could be successfully prepared by non-repetitive, single-step deposition. The oriented film thus obtained had the remnant polarization 2P r of 39 μC/cm2 and the dielectric constant ε′ of 960 ± 169.  相似文献   
8.
Lumogen薄膜用于固态硅基探测器件CCD紫外增强具有显著的成本和工艺优势。研究旋涂法制备Lumogen薄膜的CCD紫外增强技术,通过对薄膜的光谱分析得到优化的制备工艺。制备的薄膜在可见光波段透过率较高,对紫外波段的光具有较强的吸收,其发射峰位于525 nm,并且激发谱较宽, 涵盖200~400 nm。实验结果表明使用旋涂法制备的紫外增强薄膜,能将紫外光转化为可见光,并且在增强紫外响应的同时,不削弱可见波段的响应,是一种有效增强固态检测器紫外响应的紫外增强薄膜。  相似文献   
9.
Vomnoi结构与一些自然结构十分相象,早在17世纪,Descartes就在他的著作中采用了类似Vomnoi结构的图形来表示太阳系及其环境中的物质分布.Vomnoi图(如图1所示)的概念来自于计算几何,设有平面空间点集合A={a1,a2,……an},其中ai=(xi,yi),对于任意一个ai,满足|P-ai|≤min |P-aj|(j=1,2,……,n;j≠i)的点P=(x,y)的轨迹称为点集A的vomnoi图.  相似文献   
10.
The rational design, synthesis and characterization of five phosphorescent platinum complexes [(C^N)Pt(acac)] [Hacac = acetylacetone, HC^N = 1-methyl-2-(4-fluorophenyl)benzoimidazole (H-FMBI), 1-methyl-2-phenylbenzoimidazole (H-MBI), 1,2-diphenyl-benzoimidazole (H-PBI), 1-(4-(3,6-di-t-butylcarbazol-9-yl))phenyl-2-phenylbenzoimidazole (t-BuCz-H-PBI), and 1-(4-(3,6-di-(3,6-di-t-butyl-carbazol-9-yl))carbazol-9-yl)phenyl-2-phenylbenzoimidazole (t-BuCzCz-H-PBI)] have been discussed. The crystal structure of (MBI)Pt(acac) shows a nearly ideal square planar geometry around Pt atom and the weak intermolecular interactions with π-π spacing of 3.55 Å. All of the complexes emit green phosphorescence from the metal-to-ligand charge-transfer (MLCT) excited state with high quantum efficiency (0.08-0.17) at room temperature. A multilayer organic light-emitting diode (OLED) with (MBI)Pt(acac) as phosphorescent dopant was fabricated using the method of high-vacuum thermal evaporation, which gives a maximum brightness, luminous and power efficiency of 13 605 cd/m2, 15.1 cd/A and 4.3 lm/W, respectively. In contrast, the comparable performance can be achieved in the solution-processed OLED based on (t-BuCzPBI)Pt(acac) with a peak brightness, luminous and power efficiency of 13 606 cd/m2, 17.5 cd/A and 8.4 lm/W, respectively. The better device efficiency results from the good square plane of central Pt coordination unit and the inhibition of the aggregates due to bulky and rigid t-butylcarbazole dendrons.  相似文献   
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