Optimization of solid phase dispersive field‐assisted ultrasonication for the extraction of auramine O and crystal violet dyes using central composite design

Simultaneous preconcentration and determination of auramine o (AO) and crystal violet (CV) dyes from aqueous solution was conducted by ultrasound assisted (dispersive) solid phase microextraction (UASPME) based on SnO₂/SnS composite loaded activated carbon (SnO₂/SnS‐NCs‐AC). The prepared of SnO₂/SnS‐NCs‐AC was characterized by FESEM and XRD analysis. Main and interaction influences of operational parameters such as pH, sonication time, amounts of sorbent, and type of eluent on extraction efficiency were investigated by central composite design and optimized with desirability function approach (DFA). ANOVA was conducted and shows that optimized values were found at 15.33 min sonication time, 0.019 g SnO₂/SnS‐NCs‐AC mass, pH 5.46 and among different solvents, dimethyl formamide was selected as an efficient eluent. Under this conditions recoverees percentage were obtained 82.85% and 86.70% for AO and CV, respectively. Based on F‐test under ANOVA all main effect and interaction effect of understudy parameters has the significant effect on the responses. At optimum conditions, limit of detection (0.0015 and 0.001 mg/l), limit of quantitation (0.4 and 0.4 mg/l), limit of linearity (9.0 and 9.0 mg/l), enrichment factor (33.48 and 83.71) and percent relative standard deviation (3.44 and 4.20) were found to be for auramine o and crystal violet dyes, respectively. Finally, the method was successfully applied for the preconcentration and determination of AO and CV in water samples and ER% of 89.0‐97.0 and 96.2–98.0% as acceptable range were found to be for AO and CV samples, respectively.     

空心球状C@SnO2@SnS2的制备及光催化去除Cr（Ⅵ）性能研究

将SnO2负载在碳球上通过不完全烧结的方法得到含有大量碳的空心状C@SnO2,随后加入TAA(硫代乙酰胺),利用离子交换法在水热过程中制备了具有不同硫化程度的空心结构的C@SnO2@SnS2三元复合物。利用XRD、FESEM、TEM、XPS、UV-Vis DRS、PL等测试手段对合成样品进行表征,并测试了其光催化去除Cr(VI)的性能。结果表明,C、SnO2和SnS2三者之间的协同作用以及空心结构的形貌显著增强了SnO2的光催化性能,其中CSS-2样品对Cr(VI)具有最佳的去除能力,太阳光照射120 min后对Cr(VI)的去除率高达98.8%。     

Covalent Assembly of MoS2 Nanosheets with SnS Nanodots as Linkages for Lithium/Sodium‐Ion Batteries

Weak van der Waals interactions between interlayers of two‐dimensional layered materials result in disabled across‐interlayer electron transfer and poor layered structural stability, seriously deteriorating their performance in energy applications. Herein, we propose a novel covalent assembly strategy for MoS₂ nanosheets to realize unique MoS₂/SnS hollow superassemblies (HSs) by using SnS nanodots as covalent linkages. The covalent assembly based on all‐inorganic and carbon‐free concept enables effective across‐interlayer electron transfer, facilitated ion diffusion kinetics, and outstanding mechanical stability, which are evidenced by experimental characterization, DFT calculations, and mechanical simulations. Consequently, the MoS₂/SnS HSs exhibit superb rate performance and long cycling stability in lithium‐ion batteries, representing the best comprehensive performance in carbon‐free MoS₂‐based anodes to date. Moreover, the MoS₂/SnS HSs also show excellent sodium storage performance in sodium‐ion batteries.     

Enhanced electrochemical performance of SnS nanoparticles/CNTs composite as anode material for sodium-ion battery

SnS/CNTs composite as anode for SIBs exhibits high reversible capacity, good cyclability as well as rate performance, which is superior to that of pure SnS. The enhanced electrochemical performance can be attributed to the adding of CNTs as a flexible and conductive structure supporter and the formation of SnS nanoparticles with small diameter.     

快速退火对PLD法制备SnS薄膜结构和光学性质的影响

利用脉冲激光沉积(PLD)法在玻璃基片上室温生长SnS薄膜,并在Ar气保护下分别在200,300,400,500,600℃对薄膜进行快速退火处理。利用X射线衍射(XRD)、拉曼光谱仪(Raman)、原子力显微镜(AFM)、场发射扫描电子显微镜( FE-SEM)、紫外-可见-近红外分光光度计( UV-Vis-NIR)、Keithley 4200-SCS半导体参数分析仪研究了快速退火温度对SnS薄膜的晶体结构、表面形貌以及有关光学性质和电学性能的影响。所制备的SnS薄膜样品沿(111)晶面择优取向生长,退火温度为400℃时的薄膜结晶质量最好。薄膜均具有SnS特征拉曼峰。随着退火温度的升高,薄膜厚度逐渐减小,而平均颗粒尺寸逐渐增大。不同退火温度下的SnS薄膜在可见光范围内的吸收系数均为105 cm-1量级,400℃时退火薄膜的直接带隙为1.92 eV。随着退火温度从300℃升高到500℃,电阻率由1.85×104Ω·cm下降到14.97Ω·cm。     

Preparation and characterization of SnS nanocrystals by a triethanolamine-assisted diethylene glycol solution synthesis

Stoichiometric, phase-controllable SnS nanocrystals (NCs) were prepared by a solution chemical synthesis using triethanolamine-assisted diethylene glycol solvent, tin(II) chloride and thioacetamide as precursors at injection temperature of 180-220 °C. The influences of triethanolamine adding amounts, injection temperature, refluxing time on crystal phase, growth morphology and optical property of the synthesized SnS NCs were investigated. The results showed that both orthorhombic (OR) and zinc-blende (ZB) phase of SnS NCs could be formed by altering triethanolamine amounts.     

Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector

Due to their excellent carrier mobility, high absorption coefficient and narrow bandgap, most 2 D IVA metal chalcogenide semiconductors(GIVMCs, metal = Ge, Sn, Pb;chalcogen = S, Se) are regarded as promising candidates for realizing high-performance photodetectors. We synthesized high-quality two-dimensional(2 D) tin sulfide(Sn S) nanosheets using the physical vapor deposition(PVD) method and fabricated a 2 D Sn S visible-light photodetector. The photodetector exhibits a high photoresponsivity of 161 A·W~(-1) and possesses an external quantum efficiency of 4.45 × 10~4%, as well as a detectivity of 1.15 × 10~9 Jones under 450 nm blue light illumination. Moreover, under poor illumination at optical densities down to 2 m W·cm~(-2), the responsivity of the device is higher than that at stronger optical densities. We suggest that a photogating effect in the 2 D Sn S photodetector is mainly responsible for its low-light responsivity. Defects and impurities in 2 D Sn S can trap carriers and form localized electric fields, which can delay the recombination process of electron-hole pairs,prolong carrier lifetimes, and thus improve the low-light responsivity. This work provides design strategies for detecting low levels of light using photodetectors made of 2 D materials.     

Preparation and properties of SnS film grown by two-stage process

SnS films have been prepared by a novel two-stage process. It involved sputtering of Sn film on glass substrate and sulfurization of the thin metallic tin precursor layers in a vacuum furnace. The X-ray diffraction results showed that the SnS layers had orthorhombic structure and (0 4 0) preferential growth is more and more obvious with the increase of sulfurization time. The SnS film obtained by this work shows high optical absorption efficiency, and the film has a direct optical band gap of about 1.3 eV. The films show p-type conductivity and the resistivity of SnS film decreased obviously under illumination.     

Structural and optoelectronic properties of vacuum evaporated SnS thin films annealed in argon ambient

In this work, 650 nm polycrystalline SnS thin films were grown by thermal evaporation of high purity tin sulfide powder at 250 °C substrate temperature, followed by post deposition annealing at 200 °C and 300 °C for 2, 4 and 6 h, and at 400 °C for 2 and 4 h in argon ambient. The XRD pattern of the as-deposited and annealed SnS films led to the conclusion that the as-deposited films were polycrystalline in nature with preferentially oriented along (1 1 1) direction. The direct bandgap of all the films was found to be observed between 1.33 and 1.53 eV. Except for annealing at 400 °C all the films were nearly stoichiometric in nature, suggesting lower rate of desulfurization at that ambient. However, higher annealing temperature has resulted in the segregation of tin phase. All the films showed good absorption in the visible range. The as-deposited and annealed films showed p-type conductivity. Hall measurement revealed the carrier concentration and mobility ranging from 10¹⁵ to 10¹⁶ cm⁻³ and 0.8 to 31.6 cm² V⁻¹ s⁻¹ respectively. The photoconductivity measurements of all the SnS films were carried out by recording the lowering of resistance of the respective films with time under illumination.     

超声喷雾热解法制备SnS薄膜的物性研究

用超声喷雾热解法制备SnS多晶薄膜,对比了三种不同前驱液配比浓度对SnS薄膜性能的影响。XRD测试表明,当前驱液为硫脲(0.5 mol·L-1)+四氯化锡(0.5 mol·L-1)+去离子水时,SnO2的衍射峰强度比较大;当前驱液为硫脲(0.6 mol·L-1)+四氯化锡(0.5 mol·L-1)+去离子水时,SnS的衍射峰占主要地位,其中也含有一定量的SnO2;当前驱液为硫脲(0.7 mol·L-1)+四氯化锡(0.5 mol·L-1)+去离子水时,退火后的薄膜为单一的SnS薄膜,具有斜方晶系结构。SEM观测发现,薄膜均匀、致密,前驱液中硫脲浓度较大时,颗粒也较大。透过谱测试表明,浓度对薄膜透过率影响较小。结合器件的暗I-V和C-V测试,用三种前驱液配比浓度所制备的器件的结特性差异不大;当前驱液中硫脲浓度较大时,载流子浓度相对较大。