Polariton gap solitary waves in semiconductor microcavities

We study nonlinear dynamics of optical pulse propagation in the spectral region inside the polariton gap. It is shown that the Kerr nonlinearity can lead to formation of solitary waves in this region of frequencies.     

Structural and optical characterization of the propolis films

We have performed structural and optical characterizations of the propolis (an organic entity of biological nature) films grown on various non-organic substrates. The films were grown from a propolis melt or a propolis alcohol solution. The crystal structure has been observed in the films precipitated from the solution onto substrates such as an amorphous glass and sapphire or semiconductor indium monoselenide. For any growth method, the propolis film is a semiconductor with the bandgap of 3.07 eV at 300 K that is confirmed by a maximum in photoluminescence spectra at 2.86 eV. We argue that propolis films might be used in various optoelectronic device applications.     

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

静压下半导体微腔内激子与光子行为的研究

由于腔模与激子对压力的依赖关系不同,所以可以选择不同的压力使激子和光场处于不同的耦合状态,从而实现对耦合的调谐。利用这种办法,我们观测到了代表激子与光场强耦合作用的Rabi分裂。由于在我们现有样品结构中压力对激子本征行为的影响很小,与以前报道的温度、电场等调谐方式相比,这种调谐方法不仅可以有效地调谐半导体微腔内激子与腔模的耦合程度,而且能够保持激子的本征性质在整个调谐过程中基本不变。这有助于研究在强耦合过程中激子极化激元的本征性质。将实验结果与压力下激子与腔模耦合理论进行拟合,得出了正确的Rabi分裂值。     

醇体系中合成CuGaS2纳米晶及其形貌演变

以CuCl2·2H2O,自制的GaCl3和(NH2)2CS为原料,在乙二醇体系中合成了花状结构的CuGaS2纳米晶．产物分别用X射线粉末衍射仪、透射电子显微镜、场发射扫描电子显微镜、高分辩透射电子显微镜和X射线光电子能谱仪进行了表征．实验结果表明,220℃反应24 h得到均匀的花状纳米结构CuGaS2,它是由厚度80-100 nm的片晶组成．同时,通过反应时间的控制,可以清楚的看到由纳米颗粒到纳米球以及花状纳米结构的演变过程．另外,研究了反应温度、反应时间、溶剂等对产物和形貌的影响．此外,对花状结构纳米晶的生长机理进行了初步的探讨．室温荧光光谱表明,随粒径的降低,发光位发生了部分蓝移．     

Measurement of small-signal and large-signal responses of packaged laser modules at high temperature

In this paper, the pulsed injection method is extended to measure the chip temperature of various packaged laser modules, such as the DFB laser modules, the FP laser modules, and the EML laser modules. An optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. The small-signal frequency responses and large-signal performances of packaged laser modules at different chip temperature are measured. The adiabatic small-signal modulation characteristics of packaged LD are first extracted. In the large-signal measurement, the effects of chip temperature, bias current and driving signal on the performances of the laser modules are discussed. It has been found that the large-signal performances of the EML modules depend on the different red-shift speeds of the DFB and EAM sections as chip temperature varying, and the optimal characteristics may be achieved at higher temperature.     

Magnetic resonance in amorphous metals based on Fe in the millimeter radiowave range

The research technique of amorphous magnetics is described. The paper gives the experimental data obtained by a multifunctional low-temperature radiospectrometer Buran in the mm radiowave range and presents their analysis.     

Photoelectrochemical behavior of coupled SnO2|CdSe nanocrystalline semiconductor films

A photoelectrochemical cell with a coupled SnO₂|CdSe nanocrystalline semiconductor electrode has been prepared by sequential deposition of SnO₂ and CdSe films onto an optically transparent electrode (OTE), and its photoelectrochemical behavior has been studied. The results show that the coupling of CdSe with SnO₂ leads to an improvement in the performance of OTE|SnO₂|CdSe over OTE|CdSe cells in terms of increased incident photon-to-current conversion efficiency, increased stability and smaller reversal of current. The favorable positioning of the energy bands of SnO₂ and CdSe is responsible for the above observations. Various photoelectrochemical parameters of the OTE|SnO₂|CdSe cell obtained for an incident light power of 0.31 mW cm⁻² at 470nm, are as follows: I_sc ≈ 25–30 μA cm⁻², V_oc ≈ 0.5–0.6 V, ƒƒ = 0.47 and a power conversion efficiency of about 2.25%.