Distributed feedback multipeak laser emission in Rhodamine 6G doped organic-inorganic hybrids

Organic-inorganic hybrid materials were prepared from an ureasil precursor (ureapropyltriethoxysilane designated as UPTES) and acrylic acid modified zirconium (IV) n-propoxide. Thin films containing rhodamine 6G (Rh6G) were prepared by spin-coating on glass substrates with different Zr:Si molar ratios (Zr:Si = 75:25, 50:50 and 25:75). Refractive index, thickness, number of propagating modes and attenuation coefficient were measured at 543.5, 632.8 and 1550 nm wavelengths by the prism coupling technique. Distributed feedback (DFB) laser effect was observed and studied as a function of films thickness and refractive index.     

All-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity

A novel scheme for all-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity is proposed and investigated numerically. The results show, for a 2.5 GHz driving pulse train, it can be generated 5-25 GHz repetition rate pulse trains with low clock amplitude jitter, polarization independence and high peak power. Furthermore, the extraction of the clock signal from a pseudorandom bit sequence signal can be realized based on the proposed scheme.     

Polariton gap solitary waves in semiconductor microcavities

We study nonlinear dynamics of optical pulse propagation in the spectral region inside the polariton gap. It is shown that the Kerr nonlinearity can lead to formation of solitary waves in this region of frequencies.     

Fabrication and characterization of a PbTe quantum dots multilayer structure

Multilayer PbTe quantum dots (QDs) and SiO₂ were grown by pulsed laser deposition (PLD) and Plasma enhanced chemical vapor deposition (PECVD) techniques. The crystalline structure, QD size and size dispersion were observed by high-resolution transmission electron microscopy (HRTEM) measurements. This technique allows one to grow PbTe QDs as small as 1.8 nm diameter and 0.6 nm size dispersion. The whole structure can be used in a Fabry–Perot cavity for an optical device operating at the mid-infrared region.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

High power CW solid-state multilaser system

A laser system containing four CW Nd:YAG double-rod lasers, transforming optics and a fibre with input-output optics has been designed and investigated. It is shown that reduction of the beam parameter product of the non-Gaussian beams in the image space of the lens has made it possible to collect the emission of four lasers to the same fibre. Independent laser operation has provided the output power control in the range of 10–900 W with a stable light spot size on the input end of the fibre.     

利用半导体光放大器进行光脉冲消基座的理论研究

提出了一种利用半导体光放大器(SOA)联合可调谐光滤波器进行高阶孤子压缩消基座的新方法.进行了详尽的理论分析和优化.数值计算表明,在一定条件下,这种方法能够在不展宽脉冲的前提下,对基座进行有效地抑制.     

Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6 μm

We have successfully fabricated and characterized room temperature continuous wave (cw) GaInAsSb/AlGaAsSb distributed feedback lasers emitting in the wavelength region between 2.499 and 2.573 μm. To the best of our knowledge, this is the longest emission wavelength realized with a GaSb-based DFB laser diode. The laser structure used for DFB processing was grown by solid source molecular beam epitaxy. A DFB concept requiring no subsequent overgrowth step was used by defining first-order Cr-Bragg gratings laterally patterned to a ridge waveguide. Threshold currents smaller than 60 mA and room temperature cw output powers up to 6.5 mW were obtained. The laser diodes show single mode emission with side mode suppression ratios (SMSR) of up to 32 dB.     

Separate Polarization Modes Synchronization and Synchronization Switches between Vertical-Cavity Surface-Emitting Lasers

For vertical-cavity surface-emitting lasers (VCSELs) with polarization-rotated feedback, there exist several synchronization types such as synchronizations between total powers and synchronizations between separate polarization modes. Based on the two-mode rate equations, we study and compare numerically the performances of different synchronization types. Our results show that three synchronization types exhibit good performances when their synchronization conditions are satisfied. They are the complete synchronization between total powers, complete synchronization between x-polarized modes, and generalized synchronization between x-polarized and y-polarized modes. The former two types are sensitive to the injection rate and spontaneous emission, while the third type is contrary. Synchronization type with the best performance may switch from one to another, with changing of injection rate and spontaneous emission factor.