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1.
2.
The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems. 相似文献
3.
The article concerns heterojunction resonant cavity-enhanced (RCE) Schottky photodiodes with GaAs in the absorption layer. The quantum efficiency and linear pulse response have thoroughly been analysed. For the first time, the response of a heterojunction photodiode has been modelled by the phenomenological model for a two-valley semiconductor. The results obtained have shown that the satellite valleys, as well as the parasitic time constant, significantly influence the response and, accordingly, have to be taken into account when analysing and optimizing RCE photodetectors. 相似文献
4.
Olga Bori Timo J. Tolmunen Erik Kollberg Margaret A. Frerking 《International Journal of Infrared and Millimeter Waves》1992,13(6):799-814
The S-parameters of several different quantum well double barrier diodes have been measured. A technique has been developed for measuring whisker contacted diodes with and HP 8510B automatic network analyzer. Special coaxial mounts using K-connectors were designed to enable measurements up to 20 GHz. The voltage-dependent conductance and capacitance were derived from the measured reflection coefficient of each device. The C/V characteristics were observed to exhibit an anomalous increase at voltages corresponding the the negative differential resistance region (NDR). These are the first reported S-parameter measurements in the negative differential resistance region of quantum well double barrier diodes. A theory is presented that explains, in part, the observed results. 相似文献
5.
We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface. 相似文献
6.
High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions. This indicates that the defects were located in the vicinity of the interface. The change of the peak height and position of the ICTS curves under various bias conditions were qualitatively interpreted by the distribution of the defects and the current flow effect. 相似文献
7.
8.
The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.79±0.04 and 1.13±0.06 eV for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. From the low capacitance-frequency (C-f) characteristics as well as conductance-frequency (G-f) characteristics, the energy distribution of the interface states and their relaxation time have been determined in the energy range of (0.53−Ev)-(0.79−Ev) eV taking into account the forward bias I-V data. The interface state density Nss ranges from 4.93×1010 cm−2 eV−1 in (0.79−Ev) eV to 3.67×1013 cm−2 eV−1 in (0.53−Ev) eV. Furthermore, the relaxation ranges from 3.80×10−3 s in (0.53−Ev) eV to 4.21×10−4 s in (0.79−Ev) eV. It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap. 相似文献
9.
Erik J. Faber Dr. Wouter Sparreboom Wilrike Groeneveld Louis C. P. M. de Smet Dr. Johan Bomer Wouter Olthuis Dr. Han Zuilhof Dr. Ernst J. R. Sudhölter Prof. Piet Bergveld Prof. Albert van den Berg Prof. 《Chemphyschem》2007,8(1):101-112
The electrochemical behavior of Si--C linked organic monolayers is studied in electrolyte-insulator-Si devices, under conditions normally encountered in potentiometric biosensors, to gain fundamental knowledge on the behavior of such Si electrodes under practical conditions. This is done via titration experiments, Mott-Schottky data analysis, and data fitting using a site-binding model. The results are compared with those of native SiO(2) layers and native SiO(2) layers modified with hexamethyldisilazane. All samples display pH sensitivity. The number of Si--OH groups on the alkylated samples is calculated to be less than 0.7 % of that of a pure SiO(2) insulator, which still causes a pH sensitivity of approximately 25 mV per pH unit in the pH range: 4-7. The alkylated samples hardly suffer from response changes during up- and down-going titrations, which indicates that very little oxide is additionally formed during the measurements. The pK(a) values of all samples with monolayers (4.0-4.4) are lower than that of native SiO(2) (6.0). The long-term drift (of approximately 1 mV h(-1)) is moderate. The results indicate that biosensors composed of alkylated Si substrates are feasible if a cross-sensitivity towards pH in the sensor signal is taken into account. 相似文献
10.
P. Goy 《International Journal of Infrared and Millimeter Waves》1982,3(2):221-234
This paper describes experimental results obtained with a packaged GaAs Schottky barrier diode in contact with a coaxial connector and placed across waveguides for bands Ka, V, E, W or F. Among the microwave sources used for calibration were 9 carcinotrons in the frequency interval 51–490 GHz. As soon as the frequency F is above the waveguide cut-off frequency, the different characteristics do not depend critically on the waveguide size for V, E, W and F bands. The video detection sensitivity, of several 100 mV/mW at 50 GHz and below, decreases as F–4 in the range 51–500 GHz. Coupling an X-band centimeter frequency via the coaxial connector and a millimeter frequency via the waveguide permits harmonic mixing in the diode. Between 36 and 490 GHz, the harmonic mixing number varies from 3 up to the very large value 40 with conversion losses from 18 to 88 dB. The minimum detectable signal in the 100 kHz band can be as low as –90 dBm at 80 GHz. A noticeable millimeter power is available at the waveguide output from injected centimeter power by harmonic generation. Starting for instance with 100 mW around 11.5 GHz, we have measured 0.1 mW at 80 GHz and 0.1 W at 230 GHz. To illustrate the possibility of creating usable millimeter and submillimeter wave without heavy equipment (such as carcinotrons or millimeter klystron) we report spectroscopic experiments in Rydberg atoms. Resonances have been observed up to 340 GHz by harmonic generation (28th harmonic) from an X-band klystron). 相似文献