Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850 nm

We report on the fabrication and characterization of Si/SiO₂ Fabry-Perot microcavities. These structures are used to enhance the external quantum efficiency along the cavity axis and the spectral purity of emission from silicon rich oxide films that are used as active media to fabricate a Si based RCLED (resonant cavity light emitting devices). A new structure to electrically pump the active media in the resonant cavity has been designed. These structures are fabricated by chemical vapour deposition on a silicon substrate. The microcavities are tuned at 850 nm and present a quality factor ranging from 17 to 150 depending on the number of pairs constituting the dielectric mirrors. An enhancement of the electro and photoluminescence (PL) signal of 20 times is achieved for the selected emission wavelength. These cavities are characterized by TEM analysis to evaluate film uniformity, thicknesses and the densification after annealing processes for temperature ranging from 800 to 1100 °C. The electrical properties of the active media are analyzed. The electroluminescence spectral features are compared with PL spectra correlated with the quality factor of the cavities. The photometric diagram shows also a high directionality of the emitted light within a 30° cone from the sample normal.     

基于复合腔的波长可调谐连续橙红色激光器

设计并研制了一种基于复合腔结构的波长可调谐、瓦级连续输出的橙红色激光器.该激光器是由半导体激光侧泵Nd∶GdVO_4晶体产生p-偏振1 062.9nm基频光的谐振腔和使用周期性极化晶体MgO∶PPLN(三个极化周期为29.0μm、29.8μm和30.8μm)的单共振光学参量振荡器组成.在两个谐振腔的重叠区域,利用Ⅱ类临界相位匹配KTP晶体对s-偏振信号光与p-偏振1 062.9nm基频光进行腔内和频.通过对MgO∶PPLN晶体进行三个不同极化周期的调谐和30℃~200℃范围内的温度调谐,在三个波段(613.4~619.2nm@29.0μm、620.2~628.9nm@29.8μm和634.4~649.1nm@30.8μm)获得了波长可调谐的橙红色激光连续输出,并在相应波段(3 980.0~3 758.5nm@29.0μm、3 714.2~3 438.3nm@29.8μm和3 278.0~2 940.2nm@30.8μm)获得了波长可调谐的中红外闲频光的连续输出.在30℃最低调谐温度,通过改变晶体的极化周期,在613.4nm、620.2nm和634.4nm处测得最大连续输出功率分别为1.52 W、2.21 W和3.03 W,对应的三束闲频光最大连续输出功率分别为2.36 W@3 980.0nm、3.17 W@3 714.2nm和4.13 W@3 278.0nm.     

Si-based erbium-doped light-emitting devices

We report on the fabrication and performance of Si-based light sources. The devices consist of MOS structures with erbium (Er)-doped silicon rich oxide (SRO) film as gate dielectric. The devices exhibit electroluminescence (EL) at 1.54 μm at room temperature with a 0.2% external quantum efficiency. These devices show a high stability due to the silicon excess in the film. The Er-doped SRO films have been introduced in a Si/SiO₂ Fabry-Perot Microcavity in order to increase the spontaneous emission rate, the extraction efficiency and the spectral purity at the resonant wavelength. The active medium in the cavity has been electrically pumped and the conduction mechanisms have been analyzed. The EL spectra have also been acquired and compared with photoluminescence (PL) ones for the same resonant cavity light-emitting device (RCLED). The EL and PL peak intensities of the on-axis emission at the resonant wavelength are over 20 times above that of the similar Er-doped SRO film without a cavity. The Si-based RCLEDs exhibit different quality factors, ranging from 60 to 170. The spectra shape and intensity have been correlated with the quality factor. A high directionality of the emitted light, due to the presence of the resonant cavity, has also been observed: the overall luminescence is confined within 10° cone from the sample normal.     

Si-based materials and devices for light emission in silicon

We report on the fabrication and performances of extremely efficient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1.54 μm electroluminescence (EL) at 300 K with a 10% external quantum efficiency, comparable to that of standard light-emitting diodes using III–V semiconductors. Er excitation is caused by hot electrons impact and oxide wearout limits the reliability of the devices. Much more stable light-emitting MOS devices have been fabricated using Er-doped silicon rich oxide (SRO) films as gate dielectric. These devices show a high stability, with an external quantum efficiency reduced to 1%. In these devices, Er pumping occurs by energy transfer from the Si nanostructures to the rare-earth ions. Finally, we have also fabricated MOS structures with Tb- and Yb-doped SiO₂ which show room temperature EL at 540 nm (Tb) and 980 nm (Yb) with an external quantum efficiency of a 10% and 0.1%, respectively.     

近红外KTP单共振光参量振荡器

本文报道了角度调谐KTP单共振参量振荡器(SRO)的实验结果,并对结果进行了分析讨论.采用调QNd:YAG激光的二次谐波作为泵浦源.受腔镜涂膜带宽的限制,调谐范围为785～1010nm.最大的参量光脉冲能量为2.4mJ.最大的能量转换效率为26.3%.     

非晶硅短程序与电子结构关系的量子化学研究

本支通过对Si_(29)无规网络原子簇模型的CNDO计算,探讨了非晶硅(a-Si)结构短程序对其电子态密度(DOS)分布的影响。结果表明,在与实验原子径向分布函数(RDF)基本相同的条件下,a-Si模型中的键角和二面角是影响电子态密度分布的主要参数。     

Liquid–liquid structure transition in Sn–3.5Ag–3.5Bi melts

The liquid–liquid structure transition (LLST) as the function of temperature and time in Sn–3.5Ag–3.5Bi melts was investigated with the help of direct current four-probe method. The LLST which occurs during first cycle heating of two cycles heating/cooling experiments can divide into two different structure changes: irreversible LLST of 650°C isothermal and step reversible LLST at 770°C–806°C on subsequent heating process. Obvious kinetic phenomena are observed during isothermal experiments. Irreversible and reversible LLST are analysed from the viewpoint of short-range order. These results will help to understand the law and mechanism of liquid field, and provide some scientific reference for the innovation of lead-free solder manufacturing.     

温度调谐MgO：LiNbO3晶体光参量振荡器

采用调Q Nd:YAG激光倍频光(0.532μm)泵浦温度调谐MgO:LiNbO_3晶体单、双谐振光参量振荡器(OPO包括DRO、SRO)的实验结果.双谐振(DRO)调谐范围达844.1～1411.3nm,最低泵浦阈值0.22mJ/pulse;单谐振(SRO)调谐范围达738.9～1032.2nm,最低泵浦阈值0.66mJ/pulse.最大能量转换效率为10.4%.