Thermal Analysis of the Conformational Disorder in SCLC Polymers with Rigid Backbone Glass transition studies

Bis [(ω-(4′-cyanobiphenyl)-4-yl)oxy-n-alkyl]norborn-5-ene-2,3-dicarboxylate was polymerised via ring opening metathesis polymerisation (ROMP). Two disubstituted polynorbornene derivatives both of cis configuration with different length of the side-chain were studied. Differential scanning calorimetry (DSC) was used to study the effect of thermal history on the assignment of the glass transition event associated with the biaxial orientation of a smectic phase. Glass transition temperatures, the change of isobaric specific heats at T_g and the enthalpies of isotropisation were calculated. The DSC traces only show the classic step-wise change in T_g in some cases, giving the evidence that the amorphous domains are constrained and highly restricted in movement due to the morphology developed as a result of the biaxial stretching. Based on the literature data of mono- and disubstituted polynorbornene derivatives and our calorimetric experiments, the shape of T_g dependence on number of (CH₂) units is interpreted. The origin of this shape is discussed. This revised version was published online in August 2006 with corrections to the Cover Date.     

Sequential centrifugal layer chromatography (SCLC): A new technique for the isolation of natural compounds. Part 2: Comparative study on centrifugal layer chromatography (CLC) and SCLC for the separation of furocoumarin isomers

The new sequential centrifugal layer chromatography extends the possibilities for preparative separation of furocoumarin isomers. In the present work, isobergapten, pimpinellin, bergapten, isopimpinellin, and sphondin were isolated from a prepurified extract of Heracleum sphondylium roots using two different techniques, namely, centrifugal layer chromatography (CLC) and sequential centrifugal layer chromatography (SCLC). The former technique was carried out with four plates, whereas the latter method required only one plate, using the same mobile phase in each case. A further advantage of the SCLC method was that all completely separated compounds could be quickly and efficiently eluted in small volumes of mehtanol.     

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (T_sb = 30°, 400°C). X‐ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400°C). The polycrystalline films were found to have a hexagonal lattice. Compositions of these films have been characterized by EDAX and the surface analysis by scanning electron microscopy. Optical properties of the films, investigated by using spectrophotometer transmittance spectra in the wavelength range (300 – 1100 nm), were explained in terms of substrate temperatures. Films formed at room temperature showed an optical band gap (E_g^opt) 1.56 eV; where as the films formed at 400°C were found to have a E_g^opt of 1.92 eV. The increase in the value of E_g^opt with T_sb treatment is interpreted in terms of the density of states model as proposed by Mott and Davis. The analysis of current ‐Voltage characteristics, based on space charge limited currents (SCLC) measurements, confirms the exponential decrease of density of states from the conduction band edge towards the Fermi level for both the amorphous and polycrystalline films. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Possible transition from space-charge-limited to injection-limited conduction in poly(3-hexylthiophene) thin films

Two-terminal thin films of poly(3-hexylthiophene) (P3HT) with a wide electrode separation (150 m) has been studied using current-voltage characteristics at different temperatures. Space-charge-limited conduction (SCLC) with high injection barriers (1.3 eV) has been observed at all temperatures in the low electric field regime. A possible transition from SCLC to injection-limited conduction (ILC) is reported. The experimental results have been compared with the disorder-controlled injection model proposed by Arkhipov et al. [V.I. Arkhipov, H. von Seggern, E.V. Emilianova, Appl. Phys. Lett. 83 (2003) 5074; V.I. Arkhipov, E.V. Emilianova, Y.-H. Tak, H. Bässler, J. Appl. Phys. 84 (1998) 848; V.I. Arkhipov, U. Wolf, H. Bässler, Phys. Rev. B 59 (1999) 7514].     

聚苯乙炔的伏安特性

聚苯乙炔的伏安特性周淑琴（中国科学院化学研究所北京１０００８０）关键词聚苯乙炔，伏 安特性，欧姆电导，空间电荷限制电流，高斯分布陷阱能级，陷阱态密度聚苯乙炔（ＰＰＡ）是一种具有π电子的共轭高分子聚合物，它的光电导特性引起了同行的兴趣［１］．目前高分...     

Investigation of the electrical properties of a new PPV derivative-based on a sandwich structure for opto-electronic applications

The opto-electronic properties of native poly(p-phenylene vinylene) (PPV) were tuned by the confinement of the π-conjugation and the incorporation of a sulphur group as a spacer in order to obtain a blue-green emitting polymer (PPVS). The energy band gap of the PPVS thin film has been measured by UV-vis absorption spectroscopy and evaluated to 2.87 eV. Current-voltage characteristics and impedance spectroscopy measurements performed on sandwich structures [ITO/PPVS/Al] are used to elucidate the conduction mechanisms. The static electrical characterisations showed a space charge limited conduction (SCLC) and a conductivity with low power frequency behaviour characteristic of a hopping transport in disordered materials. The impedance spectra can be discussed in terms of an equivalent circuit model designed as a parallel resistor R_P and capacitor C_P network in series with a resistor R_S. We extract numerical values of these parameters by fitting experimental data. Their evolution with bias voltages has shown that the SCLC mechanism is characterised by an exponential trap distribution.     

Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate

Pt/TiO₂/TiN device with the amorphous TiO₂ film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO₂ film and accumulated at the Pt/TiO₂ interface. The barrier height of the Schottky contact of the Pt/TiO₂ interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO₂ film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.     

Si-based erbium-doped light-emitting devices

We report on the fabrication and performance of Si-based light sources. The devices consist of MOS structures with erbium (Er)-doped silicon rich oxide (SRO) film as gate dielectric. The devices exhibit electroluminescence (EL) at 1.54 μm at room temperature with a 0.2% external quantum efficiency. These devices show a high stability due to the silicon excess in the film. The Er-doped SRO films have been introduced in a Si/SiO₂ Fabry-Perot Microcavity in order to increase the spontaneous emission rate, the extraction efficiency and the spectral purity at the resonant wavelength. The active medium in the cavity has been electrically pumped and the conduction mechanisms have been analyzed. The EL spectra have also been acquired and compared with photoluminescence (PL) ones for the same resonant cavity light-emitting device (RCLED). The EL and PL peak intensities of the on-axis emission at the resonant wavelength are over 20 times above that of the similar Er-doped SRO film without a cavity. The Si-based RCLEDs exhibit different quality factors, ranging from 60 to 170. The spectra shape and intensity have been correlated with the quality factor. A high directionality of the emitted light, due to the presence of the resonant cavity, has also been observed: the overall luminescence is confined within 10° cone from the sample normal.     

Effect of impurity (Te and Zn) incorporation in the density of defect states in thin films of Se90In10 and Se75In25 glassy alloys

In this paper we report the effect of Te and Zn incorporation on the density of defect states of two binary Se–In glassy systems. For this purpose, we have chosen here two well known Se₉₀In₁₀ and Se₇₅In₂₅ binary glassy alloys. Thin films of Se₉₀In₁₀, Se₇₅In₂₅, Se₇₅In₁₀Te₁₅ and Se₇₅In₁₀Zn₁₅ glassy alloys prepared by quenching method, were deposited on glass substrate using thermal evaporation technique. Current–voltage characteristics have been measured at various fixed temperatures in the thin films under study. Ohmic behavior was observed at low electric fields while at high electric fields current becomes superohmic. An analysis of the experimental data confirms the presence of space charge limited conduction in Se₉₀In₁₀, Se₇₅In₁₀Te₁₅ and Se₇₅In₁₀Zn₁₅ glassy alloys. It was found that the absence of space charge limited conduction in Se₇₅In₂₅ may be due to joule's heating at high fields. By applying the theory of space charge limited conduction, the density of defect states near Fermi level was calculated. The peculiar role of the additives (Te and Zn) in the pure binary Se₉₀In₁₀ and Se₇₅In₂₅ glassy alloys is also discussed in terms of electro-negativity difference between the elements involved.     

Heterojunction between crystalline silicon and nanocomposite coupled ZnO·SnO2 and optimization of its photovoltaic performance

In this work coupled ZnO·SnO₂ nanocomposite has been used as heterojunction partner to Si for photovoltaic application and its performance is optimized. The interface defect more than 10¹² cm⁻² reduces the short circuit current density, fill factor and efficiency of the device. In addition, the best device performance is observed at the vicinity of 280K. The junction of the device has a dark saturation current density and ideality factor of the order of 10⁻⁴ Acm⁻² and 21 respectively. In addition, four different organic materials are used as back surface field layer (BSL) to the same device and performance is improved. The best conversion efficiency and open circuit voltage as high as 4.1% and 0.591 V respectively are obtained for the device with CuSCN as BSL. Consequently, a range of combined values of the energy band gap and electron affinity of the BSL materials are examined for optimal device performance.